Nippon Telegraph and Telephone Corporation

Yoshitaka Taniyasu

Hiroki Hibino

Hideki Yamamoto

Kazuhide Kumakura

Yuki Wakabayashi

Yoshiharu Krockenberger

Yoshiaki Sekine

Kazuaki Ebata

A p-type semiconductor layer includes a plurality of unit semiconductor layers, and each of the plurality of unit semiconductor layers includes a p-type nitride semiconductor whose main surface is a polar surface or a semi-polar surface. The nitride semiconductor constituting the unit semiconductor layer includes nitrogen and two or more elements, and each of the plurality of unit semiconductor layers has a composition changing in a stacking direction such that, for example, a lattice constant in a c-axis direction increases in a c-axis positive direction.

Semiconductor device

By widening a terrace on a crystal surface on a bottom face of a recess by step flow caused by heating, a flat face is formed on the bottom face of the recess, a two-dimensional material layer made of a two-dimensional material is formed on the formed flat face, and then a device made of the two-dimensional material layer is produced.

Two-dimensional material device and method for manufacturing same

A magnetic material is constituted of a ferromagnetic or ferrimagnetic insulator in a double perovskite structure of SrAOsBO(0.5&#x2264;x&#x2264;0.5, &#x2212;0.5&#x2264;y&#x2264;0.5). A is an alkali metal or alkaline earth metal atom, and B is a transition metal atom, alkali metal atom, or alkaline earth metal atom). The insulator may be SrOsO, where x=y=0 in the above formula. SrOsOis formed to have a cubic crystal structure where strontium atoms, osmium atoms, and oxygen atoms are arranged at lattice points.

Magnetic material and magnetic element

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Tokyo, Japan

Yoshitaka Taniyasu