Jx Nippon Mining Metals Corporation

Jx Metals Corporation

Jx Advanced Metals Corporation

Hokkaido University

Yoshitaka Shibuya

Kazuhiko Fukamachi

Atsushi Kodama

Hirofumi Watanabe

Satoyasu Narita

Hiroyoshi Yamamoto

Hiroki Kajita

Kenji Sato

Ryosuke Sakashita

Satoru Morioka

Takahiro Nomura

Kenta Aoyagi

Akihiko Chiba

Hiroki Sakai

Takahiro Kawaguchi

Kazuyuki Miya

Kohei Kashiyama

Shunsuke Cho

A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.

Magnesium oxide sputtering target

Provided is a copper alloy powder which is a metal powder to be used for additive manufacturing by a laser beam system, and which is able to achieve a higher laser absorption rate and additionally suppress heat transfer through necking, and a method for producing this copper alloy powder. A copper alloy powder which contains one or more elements selected from among Cr, Zr and Nb in a total amount of 15 wt % or less, with a balance being made up of Cu and unavoidable impurities, and which is characterized in that a coating film containing Si atoms is formed on the copper alloy powder, and a Si concentration in the copper alloy powder with the coating film is 5 wt ppm or more and 700 wt ppm or less.

Copper alloy powder having Si coating film and method for producing same

A production method of an additive manufactured object is provided. The method is an EB-based additive manufacturing method of spreading a pure copper powder, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a first layer, newly spreading a pure copper powder on the first layer, preheating the pure copper powder and thereafter partially melting the pure copper powder by scanning the pure copper powder with an electron beam, solidifying the pure copper powder to form a second layer, and repeating the foregoing process to add layers. The pure copper powder is a pure copper powder with a Si coating formed thereon, and the preheating temperature is set to be 400° C. or higher and less than 800° C.

Production method of additive manufactured object using pure copper powder having Si coating

A pure copper powder with a Si coating formed thereon, wherein a Si adhesion amount is 5 wtppm or more and 200 wtppm or less, a C adhesion amount is 15 wtppm or more, and a weight ratio C/Si is 3 or less. An object of the present invention is to provide a pure copper powder with a Si coating formed thereon and a production method thereof, as well as an additive manufactured object using such pure copper powder capable of suppressing the partial sintering of the pure copper powder caused by the preheating thereof in additive manufacturing based on the electron beam (EB) method, and suppressing the loss of the degree of vacuum caused by carbon (C) during the molding process.

Pure copper powder having Si coating and production method thereof, and additive manufactured object using said pure copper powder

A MgO sintered sputtering target, wherein a ratio of GOS (Grain Orientation Spread) being 0&#xb0; to 1&#xb0; is 75% or higher. A MgO sintered sputtering target, wherein a ratio of KAM (Kernel Average Misorientation) being 0&#xb0; to 2&#xb0; is 90% or higher. An object of the present invention is to provide a MgO sintered sputtering target capable of reducing particles.

MgO sintered sputtering target

A sputtering target formed from a potassium sodium niobate sintered body to which a dopant has been added; as a dopant, the sputtering target includes one or more types among Li, Mg, Ca, Sr, Ba, Bi, Sb, V, In, Ta, Mo, W, Cr, Ti, Zr, Hf, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Cu, Zn, Ag, Mn, Fe, Co, Ni, Al, Si, Ge, Sn, and Ga; and a variation coefficient of a dopant concentration in a plane of the sputtering target is 0.12 or less. In terms of suppressing the generation of particles, provided is a sputtering target which is formed from a sintered body that includes potassium sodium niobate and to which a dopant has been added.

Potassium sodium niobate sputtering target

A metal powder in which a coating made of one or more types of elements selected from Gd, Ho, Lu, Mo, Nb, Os, Re, Ru, Tb, Tc, Th, Tm, U, V, W, Y, Zr, Cr, Rh, Hf, La, Ce, Pr, Nd, Pm, Sm and Ti is formed on a surface of a copper or copper alloy powder, wherein a thickness of the coating is 5 nm or more and 500 nm or less. A metal powder for metal additive manufacturing based on the laser method which can be efficiently melted with a laser while maintaining the high conductivity of copper or copper alloy, and a molded object produced by using such metal powder are provided.

Metal powder for metal additive manufacturing and molded object produced using said metal powder

The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; and an upper layer formed on the intermediate layer, the upper layer being constituted with an alloy composed of one or two or more selected from the constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 &#x3bc;m or more and less than 5.00 &#x3bc;m; the thickness of the intermediate layer is 0.01 &#x3bc;m or more and less than 0.50 &#x3bc;m; and the thickness of the upper layer is 0.02 &#x3bc;m or more and less than 0.80 &#x3bc;m.

Metallic material for electronic components and method for producing same, and connector terminals, connectors and electronic components using same

The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 &#x3bc;m or more and less than 5.00 &#x3bc;m; the thickness of the intermediate layer is 0.02 &#x3bc;m or more and less than 0.80 &#x3bc;m; and the thickness of the upper layer is 0.005 &#x3bc;m or more and less than 0.30 &#x3bc;m.

The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; an upper layer formed on the intermediate layer, the upper layer being constituted with an alloy composed of one or two or more selected from the constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; an outermost layer formed on the upper layer, the upper layer being constituted with one or two selected from the constituent element group C, namely, the group consisting of Sn and In, wherein the thickness of the lower layer is 0.05 &#x3bc;m or more and less than 5.00 &#x3bc;m; the thickness of the intermediate layer is 0.01 &#x3bc;m or more and less than 0.50 &#x3bc;m; the thickness of the upper layer is less than 0.50 &#x3bc;m; and the thickness of the outermost layer is 0.005 &#x3bc;m or more and less than 0.30 &#x3bc;m.

The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from the constituent element group A and one or two selected from a constituent element group B, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from the constituent element group B and one or two or more selected from a constituent element group C, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; wherein the thickness of the lower layer is 0.05 &#x3bc;m or more and less than 5.00 &#x3bc;m; the thickness of the intermediate layer is 0.01 &#x3bc;m or more and less than 0.40 &#x3bc;m; and the thickness of the upper layer is 0.02 &#x3bc;m or more and less than 1.00 &#x3bc;m.

There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal materialincludes a base material, an A layerconstituting an outermost surface layer on the base materialand formed of Sn, In or an alloy thereof, and a B layerconstituting a middle layer provided between the base materialand the A layerand formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer)has a thickness larger than 0.2 &#x3bc;m, and the middle layer (B layer)has a thickness of 0.001 &#x3bc;m or larger.

Electronic component metal material and method for manufacturing the same

A material for fuel cell separator, wherein a surface layercontaining Au and Cr is formed on a surface of a Ti base, and an intermediate layercontaining Ti, O, Cr, and less than 20 atomic % of Au is present between the Ti base and the surface layer, a thickness of an area containing 65 atomic % or more of Au being 1.5 nm or more, a maximum concentration of Au being 80 atomic % or more, a coating amount of Au being 9000 to 40000 ng/cm, a ratio represented by (Au coating amount)/(Cr coating amount) being 10 or more, a coating amount of Cr being 200 ng/cmor more, and in the intermediate layer having an area containing 10% or more of Ti, 10% or more of O and 20% or more of Cr being 1 nm or more.

Material fuel cell separator, fuel cell separator using same, fuel cell stack, and method of producing fuel cell separator material

There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 &#x3bc;m. The B layer has a thickness of 0.001 to 0.3 &#x3bc;m. The C layer has a thickness of 0.05 &#x3bc;m or larger.

Press-fit terminal and electronic component using the same

There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal materialincludes a base material, an A layerconstituting an outermost surface layer on the base materialand formed of Sn, In or an alloy thereof, and a B layerconstituting a middle layer provided between the base materialand the A layerand formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer)has a thickness of 0.002 to 0.2 &#x3bc;m, and the middle layer (B layer)has a thickness larger than 0.3 &#x3bc;m.

Growing community of inventors

Ibaraki, Japan

Yoshitaka Shibuya