Japan Display Inc.

Magnolia White Corporation

Japan Display West Inc.

Yoshitaka Ozeki

Koshiro Moriguchi

Nobutaka Ozaki

Seiji Uejima

Koji Ishizaki

Takahiro Takeuchi

Morikazu Nomura

Toru Kawamura

Hayato Kurasawa

Gen Koide

Toshinori Uehara

Tadayoshi Katsuta

Tomoyasu Hirano

Yuji Suzuki

Hidemasa Yamaguchi

Toshiaki Fukushima

Kenta Seki

Takeyuki Tsuruma

Mitsufumi Sogabe

Satoshi Tokura

Hiroyuki Ikeda

Hiroyuki Watabe

Shigetaka Toriyama

Yasuhito Kuwahara

According to one embodiment, a display device includes a substrate, a switching element provided on the substrate and including a relay electrode, a first electrode provided further away from the substrate than the switching element, a first insulating film provided on the first electrode and having a first thickness, a second electrode provided on the first insulating film, a second insulating film provided on the second electrode and having a second thickness and a third electrode provided on the second insulating film and supplied with a same potential as that of the first electrode. The second thickness is greater than the first thickness.

Display device

According to an aspect, a detection device includes: a substrate; a plurality of transistors provided on the substrate; a plurality of scan lines that extend in a first direction; a plurality of signal lines that extend in a second direction intersecting the first direction; a plurality of photodiodes that are provided in an area surrounded by the scan lines and the signal lines and each include a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer; and a shield wiring line that extends in the first direction and overlaps a corresponding one of the scan lines. The shield wiring line is electrically coupled to, among the signal lines, a power supply signal line configured to supply a power supply potential to the transistors.

Detection device

A display device includes a substrate, a first transistor including an oxide semiconductor layer, a first gate insulating layer, and a first gate electrode, the first transistor being provided in a display region, and a light-shielding layer provided between the substrate and the oxide semiconductor layer. The light-shielding layer includes a first light-shielding metal layer and a second light-shielding metal layer. The first light-shielding metal is provided between the substrate and the oxide semiconductor layer. The second light-shielding metal layer covers the top surface and side surface of the first light-shielding metal layer and faces the oxide semiconductor layer.

According to an aspect, a detection device includes a substrate and a plurality of photodiodes arranged on the substrate. Each of the photodiodes comprises a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer stacked on the substrate. Each of the photodiodes includes a plurality of first regions in each of which the p-type semiconductor layer, the i-type semiconductor layer, and the n-type semiconductor layer are stacked so as to be directly in contact with one another, and a second region in which at least the p-type semiconductor layer and the i-type semiconductor layer are stacked so as to be separate from each other. Adjacent first regions included in the plurality of first regions are coupled together by at least the p-type semiconductor layer.

Detection device, display device, and illumination device with detection function

A display device includes a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode, a first transparent conductive layer in contact with the oxide semiconductor layer in a first contact area not overlapping the first gate electrode in a plan view, and a second transparent conductive layer connected to the first transparent conductive layer in a second contact area overlapping the first gate electrode in a plan view and provided in a display area of the pixel.

According to one embodiment, a detection device includes a substrate, a photoelectric conversion element provided on the substrate and including a semiconductor layer, a transistor provided to correspond to the photoelectric conversion element, and a green color filter provided above the photoelectric conversion element.

Detection device and display device

A display device includes a plurality of pixels arranged in a matrix on a substrate along a first direction and a second direction intersecting the first direction. Each of the plurality of pixels includes a transistor, a first transparent electrode located over the transistor and electrically connected to the transistor, a second transparent electrode located over the first transparent electrode and electrically connected to the first transparent electrode via an opening, an insulating layer located over the second transparent electrode, a third transparent electrode located over the insulating layer; and a metal layer in contact with the third transparent electrode. The opening overlaps a gate electrode of the transistor. At least a part of the metal layer is provided in the opening and overlaps the gate electrode. The metal layer extends along the first direction and is commonly provided in the pixels arranged in the first direction.

Display device and array substrate of display device

A display device includes: a first transistor provided with an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate electrode; a first transparent conductive layer above the first transistor; a second transparent conductive layer above the first transparent conductive layer, the second transparent conductive layer being isolated from the first transparent conductive layer and facing the first transparent conductive layer; and a third transparent conductive layer above the second transparent conductive layer, the third transparent conductive layer being isolated from the second transparent conductive layer, being connected to the first transparent conductive layer and facing the second transparent conductive layer.

According to one embodiment, a display device includes a first substrate and a second substrate opposed to the first substrate. The first substrate includes an insulating substrate, a switching element located on the insulating substrate and having a relay electrode, an organic insulating film covering the switching element and having a first through-hole penetrating to the relay electrode, a pixel electrode being in contact with the relay electrode via the first through-hole, a first capacitance insulating film covering the pixel electrode, a filler having an insulation property filled in at least the first through-hole and located on the pixel electrode and the first capacitance insulating film, and a common electrode covering the filler.

Disclosed is a display device including a substrate and a plurality of pixels over the substrate. At least one of the plurality of pixels includes a driving transistor and a liquid crystal element electrically connected to the driving transistor. The liquid crystal element has a pixel electrode, an interelectrode insulating film, a common electrode, an inorganic insulating film, a first orientation film, a liquid crystal layer, and a second orientation film. The interelectrode insulating film is located over the pixel electrode. The common electrode is located over the interelectrode insulating film and has a slit overlapping the pixel electrode. The inorganic insulating film is located over the common electrode. The first orientation film is located over the inorganic insulating film. The liquid crystal layer is located over the first orientation film. The second orientation film is located over the liquid crystal layer.

A display device includes a first transistor provided with an oxide semiconductor layer, a first gate wiring facing the oxide semiconductor layer and a first gate insulating layer between the oxide semiconductor layer and the first gate wiring, a first transparent conductive layer provided on at least a first insulating layer on the first transistor, the first transparent conductive layer having an area overlapping the gate wiring and being in contact with the oxide semiconductor layer in a first contact area not overlapping the gate wiring, a second transparent conductive layer provided above at least a second insulating layer on the first transparent conductive layer and being in contact with the first transparent conductive layer at a second contact area overlapping the gate wiring, and a third transparent conductive layer provided between the second transparent conductive layer and the second insulating layer.

According to one embodiment, a detection device includes a substrate, a photoelectric conversion element provided on the substrate and including a semiconductor layer, a transistor provided to correspond to the photoelectric conversion element, a support substrate, and a color filter being a green color filter and supported by the support substrate, wherein the color filter overlaps the photoelectric conversion element.

According to one embodiment, a display device includes a first substrate including a first signal line and a second signal line adjacent to each other along a first direction, an organic insulating film located on the first signal line and the second signal line, and a first spacer located on the organic insulating film and a second substrate opposing the first substrate and including a second spacer opposing the first spacer. The organic insulating film has a through-hole between the first signal line and the second signal line in plan view. The first spacer is provided to overlap the through-hole in plan view and filling the through-hole.

A display device includes a first transistor. The first transistor includes an oxide semiconductor layer, a first gate electrode facing the oxide semiconductor layer and a gate insulating layer between the oxide semiconductor layer and the first gate electrode. The first gate electrode has hydrogen storage properties.

A display device includes a display area, a frame area surrounding the display area, a plurality of pixel circuit in the display area, a peripheral circuit in the frame area, and wirings connecting the pixel circuit and the peripheral circuit, wherein the peripheral circuit incudes a plurality of switch circuits along a direction away from the display area, a plurality of relay electrodes between the display area and the plurality of switch circuits, and a plurality of connecting wirings connecting each of the plurality of relay electrodes and each of the plurality of switch circuits, and the plurality of relay electrodes is connected to the wirings, and one of the plurality of connecting wirings connecting one of the plurality of switch circuits and one of the plurality of relay electrodes intersects at least one of the other plurality of switch circuits in a plan view.

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Tokyo, Japan

Yoshitaka Ozeki