Other

Yoshitaka Ootsu

Takayuki Igarashi

In a capacitor formation area A , a capacitor C is formed. The capacitor is constituted by a lower-layer electrode-use polysilicon layer (lower-layer electrode) formed on a LOCOS separation film , a nitride film (dielectric film) and an upper-layer electrode-use polysilicon layer (upper-layer electrode). In this case, the lower-layer electrode-use polysilicon layer and the nitride film are formed as the same plane pattern. In CMOS formation area A , an NMOS transistor Q is formed on a P-well region and a PMOS transistor Q is formed in an N-well region . Both of the gate electrodes of NMOS transistor Q and NMOS transistor Q are formed by the upper-layer electrode-use polysilicon layer

Manufacturing method of semiconductor device

A collector region is formed on a semiconductor substrate. An emitter electrode, an external base electrode and a gate electrode are formed on the semiconductor substrate. The position of the interface between the gate electrode and the semiconductor substrate is rendered higher than the position of the interface between the external base electrode and the semiconductor substrate. Thus provided is a semiconductor device so improved that dispersion of the withstand voltage of a gate oxide film and dispersion of characteristics such as a threshold voltage and a drain-to-source current are reduced.

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Hyogo, Japan

Yoshitaka Ootsu