Renesas Electronics Corporation

Yoshitaka Onaya

Koji Saikusa

Tomoaki Uno

Ryotaro Kudo

Toshio Nagasawa

Hirokazu Kato

Shin Chiba

Katsuhiko Funatsu

A power-supply apparatus according to an aspect includes an inductor, a transistor that supplies, in an on-state, a current to the input side of the inductor, a second transistor that becomes, when the first transistor is in an off-state, an on-state and thereby brings the input side of the inductor to a predetermined potential, a signal generation unit that generates voltage signals corresponding to a current flowing to the inductor, an amplifier that outputs a current according to the voltage signals, a converter that converts the current output from the amplifier into a voltage signal, and a control unit that controls the transistors based on a first feedback signal corresponding to the voltage on the output side of the inductor and the voltage signal, which is used as a second feedback signal.

Power-supply apparatus having a high-side transistor and a low-side transistor

A semiconductor device is improved in reliability. A power MOSFET for switching, and a sense MOSFET for sensing a current flowing in the power MOSFET, which is smaller in area than the power MOSFET, are formed in one semiconductor chip. The semiconductor chip is mounted over a chip mounting portion, and sealed in a resin. To first and second source pads for outputting the current flowing in the power MOSFET, a metal plate is bonded. A third source pad for sensing the source voltage of the power MOSFET is at a position not overlapping the metal plate. A coupled portion between a source wire forming the third pad and another source wire forming the first and second pads is at a position overlapping the metal plate.

Semiconductor device

Power-supply apparatus

To improve reliability of a semiconductor device A power MOSFET for switching and a sense MOSFET having an area smaller than that of the power MOSFET and configured to detect an electric current flowing through the power MOSFET are formed within one semiconductor chip CPH and the semiconductor chip CPH is mounted over a chip mounting part via an electrically conductive joining material and sealed with a resin. In a main surface of the semiconductor chip CPH, a sense MOSFET region in which the sense MOSFET is formed is located more internally than a source pad PDHSof the sense MOSFET region RG. Furthermore, in the main surface of the semiconductor chip, the sense MOSFET region RGis surrounded by a region in which the power MOSFET is formed.

Growing community of inventors

Kawasaki, Japan

Yoshitaka Onaya