Asahi Kasei Kabushiki Kaisha

Yoshitaka Moriyasu

Makoto Ishida

Takashi Morishita

Masahiro Matsui

When producing an SOS substrate by growing a silicon layer on a sapphire substrate, or when producing an SOI substrate by depositing an oxide layer or a fluoride layer, as an intermediate layer, on a silicon substrate, and growing a silicon layer on the deposited layer, (A) after growth of the silicon layer, heat treatment is performed in an oxidizing atmosphere to oxidize a part of a surface side of the silicon layer, and the resulting silicon oxide layer is removed by etching with hydrofluoric acid. (B) With this silicon layer as a seed layer, a silicon layer is regrown homoepitaxially thereon.

Growing community of inventors

Fuji, Japan

Yoshitaka Moriyasu