Kabushiki Kaisha Toshiba

Apple Inc.

Other

Ebara Corporation

Jsr Corporation

Yoshitaka Matsui

Masako Kodera

Naoto Miyashita

Hiroshi Tomita

Norio Kimura

Atsushi Shigeta

Soichi Nadahara

Mitsuhiko Shirakashi

Xianwei Zhao

Katsuhiko Tokushige

Kazuhiko Ida

Masao Asami

Masayuki Hattori

James R Wilson

Martin Melcher

Hyungryul J Choi

Nobuo Kawahashi

Zhenbin Ge

Yasukazu Mase

Francesco Aieta

Khadijeh Bayat

Yifei Wang

Kazuo Nishimoto

Avery P Yuen

Akihiro Takemura

Daisuke Nozu

Jun Xie

Takeshi Kubota

Toshihiko Kitamura

Wencong Zhu

Xiaoyong Fu

Hiroshi Kosukegawa

Zhujun Shi

Naomi Sugawara

Shigeto Kobori

Yukinori Asakawa

Di Fan

Tatsuaki Sakano

An electronic device may have a display system. The display system may include a waveguide, an input coupler, and a surface relief grating (SRG) structure. There are various ways to form a SRG structure. In one example, nanoimprinting may be performed on a low-index resin to form a mold for a subsequent deposition of high-index material. The high-index material conforms to the mold to form ridges for the SRG structure. A reusable mold may be formed with a plurality of ridges on a flexible substrate and coated by an anti-stick coating. The reusable mold may be coated with a high-index material that is attached to a glass substrate and cured to form a wafer-level SRG structure with high-index ridges on a glass substrate. The wafer-level SRG structure is subsequently diced. SRG structures may also be formed that include varying trough thicknesses, varying ridge thicknesses, and/or a sloped substrate.

Methods of forming holographic gratings for optical systems

An electronic device may have transparent housing structures such as walls formed of glass or sapphire. Housing structures such as transparent housing structures may have a colored coating. The colored coating may include an absorptive layer and a metal layer. The coating may exhibit a color that can be adjusted by adjusting the thickness of the thin absorptive layer. A colored layer such as a layer of colored polymer may be incorporated into the colored coating to further adjust the color of the coating. The colored coating may be formed on an inner or outer housing structure surface. The surface may have a texture to provide the coating with a matte appearance. When formed on an outer surface, a diamond-like carbon layer may protect the colored coating. When formed on an inner surface, a passivation layer may be used to prevent oxidation of the metal layer.

Colored coatings for electronic devices

A method of manufacturing a semiconductor device, including the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

Method of manufacturing a semiconductor device using a wet process

A semiconductor wafer including an underlying layer including an insulating film having at least one recess therein and a metallic material layer formed over a top surface of the underlying layer and filling the recess, on a semiconductor substrate, is subjected to a polishing treatment while supplying a basic CMP slurry containing metal ions on the semiconductor wafer to at least partially remove the metallic material layer. Then, an organic acid which chelates the metal ions is added to the basic CMP slurry, and polishing is conducted, using the organic acid-added CMP slurry, until a surface of the insulating film is exposed.

Method of manufacturing semiconductor device

A polishing apparatus is used for chemical mechanical polishing a copper (Cu) layer formed on a substrate such as a semiconductor wafer and then cleaning the polished substrate. The polishing apparatus has a polishing section having a turntable with a polishing surface and a top ring for holding a substrate and pressing the substrate against the polishing surface to polish a surface having a semiconductor device thereon, and a cleaning section for cleaning the substrate which has been polished. The cleaning section has an electrolyzed water supply device for supplying electrolyzed water to the substrate to clean the polished surface of the substrate while supplying electrolyzed water to the substrate.

Polishing method and apparatus

Provided are an aqueous dispersion for chemical mechanical polishing, which planarizes a surface to be polished and has high shelf stability, a chemical mechanical polishing process excellent in selectivity when surfaces of different materials are polished, and a production process of a semiconductor device. A first aqueous dispersion contains a water-soluble quaternary ammonium salt, an inorganic acid salt, abrasive grains and an aqueous medium. A second aqueous dispersion contains at least a water-soluble quaternary ammonium salt, another basic organic compound other than the water-soluble quaternary ammonium salt, an inorganic acid salt, a water-soluble polymer, abrasive grains and an aqueous medium. The second aqueous dispersion is composed of a first aqueous dispersion material (I) obtained by mixing a water-soluble quaternary ammonium salt and an inorganic acid salt into an aqueous medium, and a second aqueous dispersion material (II) obtained by mixing a water-soluble polymer and another basic organic compound other than the water-soluble quaternary ammonium salt into an aqueous medium. Abrasive grains are contained in at least one of the aqueous dispersion materials.

Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing process, production process of semiconductor device and material for preparing an aqueous dispersion for chemical mechanical polishing

Provided is a method of manufacturing a semiconductor device, comprising preparing a base comprising a semiconductor substrate having a device surface side, a p-type semiconductor layer formed on the device surface side of the semiconductor substrate, a n-type semiconductor layer which is formed on the device surface side of the semiconductor substrate and forms a p-n junction together with the p-type semiconductor layer, and wirings formed above the semiconductor substrate and electrically connected to each other via the p-n junction, applying a chemical solution containing electrolytes to a device surface of the base, the wirings being exposed at the device surface of the base, and applying a liquid selected from the group consisting of anode water, oxidizing gas-dissolved water, radical-containing water, cathode water, reducing gas-dissolved water and an organic substance-adding solution to the device surface of the base.

Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising the following processes of forming a structure in which a barrier metal containing at least of Ti and Ta and a copper wiring are exposed on its surface, or a structure in which at least one substance selected from the group consisting of Ti, W, and Cu and Al are exposed on its surface, above a semiconductor substrate, and supplying a hydrogen-dissolved solution dissolving hydrogen gas to the surface of the structure.

A target material is electropolished by applying a voltage between an anode electrode and a counter electrode while bringing the anode electrode into contact with the surface of the target material. The anode electrode is formed of an electrode material having a current density not higher than 10 mA/cm upon application of a voltage of &plus;2.5V vs. silver/silver chloride electrode within a 0.1 M perchloric acid solution in an electrochemical measurement using a potentiostat.

Electropolishing method

A CMP apparatus is used to subject a target surface of a semiconductor wafer to a polishing treatment, by moving the target surface and a polishing surface of a polishing cloth relative to each other while supplying a polishing liquid between the target surface and the polishing surface. Electric resistance is measured between pairs of measuring points arranged on opposite sides of dicing lines on the target surface, while subjecting the target surface to the polishing treatment. The polishing treatment is caused to be ended by comparing detected values of a changing rate in measured values of the electric property with a reference value set to correspond to an end point of the polishing treatment.

Chemical mechanical polishing apparatus and method

Growing community of inventors

Yokohama, Japan

Yoshitaka Matsui