Agc Inc.

Yoshitaka Maeyanagi

Daisuke Kobayashi

Kazutaka Ono

Hirofumi Tokunaga

Atsuyoshi Takenaka

The present invention relates to a glass substrate including a pair of main surfaces and an end surface, and having a surface layer diffusion Sn atom concentration of 2.0×10atomic/cmor more and 1.4×10atomic/cmor less in at least one of the main surfaces, the surface layer diffusion Sn atom concentration being obtained by subtracting an Sn atom concentration of an inside of the glass substrate from an Sn atom concentration of a surface layer of the glass substrate, in which the Sn atom concentration of a surface layer of the glass substrate is defined as an Sn atom concentration at a depth of 0.1 to 0.3 μm from the main surface and the Sn atom concentration of an inside of the glass substrate is defined as an Sn atom concentration at a depth of 9.0 to 9.2 μm from the main surface.

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Tokyo, Japan

Yoshitaka Maeyanagi