Tokyo Electron Limited

Yoshitaka Konishi

Megumi Jyousaka

Kunie Ogata

Masahide Tadokoro

Toyohisa Tsuruda

Shinichi Shinozuka

Naruaki Iida

Norihisa Koga

Kazuhiro Takeshita

Yuzo Ohishi

Atsushi Suzuki

Kazuya Uoyama

Daisuke Oku

Yoshitada Honda

A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set, and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

Substrate processing control method, substrate processing apparatus and storage medium

A substrate processing control method in a substrate processing apparatus, includes: acquiring a data set for each substrate sequentially subjected to first and second processes at first and second levels, the data set including information specifying the first level at which the first process has been performed, information specifying the second level at which the second process has been performed and information about a characteristic amount relating to characteristics of the substrate; calculating information including an expected value of the characteristic amount, and level deviations of the first and second levels to the expected value based on the data set; and correcting the first parameter at the first level or the second parameter at the second level based on the calculated information.

There is provided a substrate processing apparatus including: a light radiator configured to radiate a light for processing into an irradiation area which is smaller than a processing target area of a surface of a substrate; a driver configured to move the irradiation area in two directions that cross each other in a plane along the surface of the substrate; and a controller configured to control the driver to move an irradiation position in two directions according to a movement pattern which has been set to radiate the light to an entire area of the processing target area.

Substrate processing apparatus, substrate processing method, and storage medium

A clean-room monitoring device for monitoring the interior of a clean-room having a floor in which a removable cover such as a grating or a non-porous cover is disposed, includes: a monitoring camera which captures an image of the removable cover; a monitor which detects the existence of an opening exposed when the removable cover is removed, based on an image signal obtained from the monitoring camera, detects the presence of a workman approaching the opening if it is detected that the opening exists, and outputs a warning signal if the workman is detected; and a warning generator which receives the warning signal from monitor and issues a warning.

Clean-room monitoring device and method for monitoring clean-room

A temperature setting method of the present invention includes the steps of: measuring states of an etching pattern within the substrate for a substrate for which a series of photolithography processing including thermal processing and an etching treatment thereafter have been finished; calculating temperature correction values for regions of a thermal processing plate from measurement result of the states of the etching pattern within the substrate using a function between correction amounts for the states of the etching pattern and the temperature correction values for the thermal processing plate; and setting the temperature for each of the regions of the thermal processing plate by each of the calculated temperature correction values.

Temperature setting method and apparatus for a thermal processing plate

In the present invention, the line widths within a substrate of an etching pattern are measured for a substrate for which photolithography processing and an etching treatment thereafter have been finished. The line width measurement results are converted into the line widths of a resist pattern using relational expressions which have been obtained in advance. From the converted line widths of the resist pattern, coefficients of a polynomial function indicating variations within the substrate are calculated. Next, a function between line width correction amounts for the resist pattern and temperature correction values is used to calculate temperature correction values for the regions of the thermal plate to bring the coefficients of the polynomial function close to zero. Based on each of the calculated temperature correction values, the temperature for each of the regions is set.

Temperature setting method for thermal processing plate, temperature setting apparatus for thermal processing plate, and computer-readable storage medium

In the present invention, a thermal plate of a PEB unit is divided into a plurality of thermal plate regions, and a temperature is settable for each of the thermal plate regions. A temperature correction value for adjusting the temperature within the thermal plate is settable for each of the thermal plate regions of the thermal plate. The line widths within the substrate which has been subjected to the photolithography process are measured, and an improvement in-plane tendency Za improved by change of the temperature settings is subtracted from an in-plane tendency Z of the measured line widths within the substrate to calculate an in-plane tendency Zb of the line widths within the substrate after change of temperature settings. The improvement in-plane tendency Za is calculated using the following expression.=&#x2212;1&#xd7;&#x3b1;&#xd7;(&#x3b1;: a resist heat sensitivity, M: a calculation model, and T: temperature correction values for thermal plate regions).

Temperature setting method of thermal processing plate, computer-readable recording medium recording program thereon, and temperature setting apparatus for thermal processing plate

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Koshi, Japan

Yoshitaka Konishi