Tokyo Ohka Kogyo Co., Ltd.

Tokyo Electron Limited

National Institute of Advanced Industrial Science and Technology

Central Glass Company, Limited

Daicel Corporation

Tokyo Institute of Technology

Toyo Gosei Co., Ltd.

San-Apro Limited

Hyogo Prefecture

Toyko Ohka Kogyo Co., Ltd.

Yoshitaka Komuro

Masatoshi Arai

Yoshiyuki Utsumi

Akiya Kawaue

Takaya Maehashi

Daisuke Kawana

Toshiaki Hato

Tomoyuki Hirano

Takehiro Seshimo

Takuya Ikeda

Naoki Yamashita

Hiroto Yamazaki

Takashi Nagamine

Tatsuya Fujii

KhanhTin Nguyen

Koshi Onishi

Daiju Shiono

Hidetami Yaegashi

Masaru Takeshita

Daichi Takaki

Junichi Tsuchiya

Akiyoshi Yamazaki

Takashi Kamizono

Katsumi Ohmori

Issei Suzuki

Takaaki Kaiho

Kenta Suzuki

Nobuhiro Michibayashi

Masahiro Shiosaki

Takatoshi Inari

Tsuyoshi Nakamura

Hiroaki Shimizu

Takahiro Dazai

Taku Hirayama

Jun Iwashita

Masahito Yahagi

Keita Ishiduka

Kensuke Matsuzawa

Hiroshi Koyama

Kenichi Oyama

Shogo Matsumaru

Toshikazu Takayama

Kazuaki Ebisawa

Naoto Motoike

Kazuishi Tanno

Kyoko Ohshita

Teruaki Hayakawa

Masamichi Nishimura

Kenichiro Miyashita

Yuki Fukumura

Takeshi Furuta

Takeyoshi Mimura

Shinji Kumada

Kazuki Yamada

Masamichi Hayakawa

Yusaku Takashima

Rin Odashima

Sho Kataoka

Mari Murata

Seina Yamazaki

Kiwamu Sue

Takeo Watanabe

Masatoshi Yamato

Tomotaka Yamanaka

Yosuke Osawa

Satoshi Ogi

Yusuke Yoshigoe

Syo Abe

Hiroo Kinoshita

Shinichi Yusa

An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rprepresents a hydrogen atom or the like; Vprepresents a single bond or a divalent linking group; Rpand Rpeach independently represents a hydrocarbon group which may have a substituent, or Rpand Rpare mutually bonded to form a ring; Rprepresents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rprepresents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rprepresents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern

Organically modified metal oxide nanoparticles containing two or more cores including a plurality of metal atoms and a plurality of oxygen atoms covalently bonded to the plurality of metal atoms; a first modifying group that is a ligand coordinated to each of the cores and selected from the group consisting of a carboxylic acid carboxylate, a sulfonic acid sulfonate, and a phosphonic acid phosphonate; and a second modifying group that is coordinated to each of the cores and is a ligand having a structure different from that of the first modifying group and/or an inorganic anion, in which organically modified metal oxide nanoparticles have a structure in which the cores are crosslinked through a coordinate bond by at least the first modifying group.

Organically modified metal oxide nanoparticles, organically modified metal oxide nanoparticles-containing solution, organically modified metal oxide nanoparticles-containing resist composition, and resist pattern forming method

A resist composition including: a compound including an anion moiety and a cation moiety and represented by the following Formula (bd1); and an organic solvent having a hydroxyl group in which Rxto Rxeach represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Ryand Ryeach independently represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; Rzto Rzeach represent a hydrocarbon group or a hydrogen atom, or may be bonded to each other to form a ring structure; at least one of Rxto Rx, Ryand Ryand Rzto Rzhas an anionic group; and Mrepresents an organic cation)

Resist composition and method of forming resist pattern

A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rxto Rxrepresents a hydrogen atom or a hydrocarbon group, or two or more of Rxto Rxmay be mutually bonded to form a ring structure; Ryand Ryrepresents a hydrogen atom or a hydrocarbon group, or Ryand Rymay be mutually bonded to form a ring structure; Rzto Rzrepresents a hydrogen atom or a hydrocarbon group, or two or more of Rzto Rzmay be mutually bonded to form a ring structure; provided that at least one of Rxto Rx, Ry, Ryand Rzto Rzhas an anionic group; and Mrepresents an m-valent organic cation).

A resist composition including a compound represented by formula (b1) in which Rrepresents an aryl group which may have a substituent; Rand Reach independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rand the aryl group or the alkyl group represented by Ror Rhas a substituent containing a halogen atom, and at least one of the aryl group represented by Rand the aryl group or the alkyl group represented by Ror Rhas a substituent containing a sulfonyl group; and Xrepresents a counteranion 

Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound

A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %:  In which Rrepresents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and Ris a group derived from a compound represented by formula SHR, wherein Rrepresents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.

Method of producing block copolymer capable of creating specific structure pattern

A resist composition including a compound represented by formula (b1) in which Rrepresents an aryl group which may have a substituent; Rand Reach independently represents an aryl group which may have a substituent or an alkyl group which may have a substituent; provided that at least one of the aryl group represented by Rand the aryl group or the alkyl group represented by Ror Rhas a substituent containing a halogen atom, and at least one of the aryl group represented by Rand the aryl group or the alkyl group represented by Ror Rhas a substituent containing a sulfonyl group; and Xrepresents a counteranion. 

A resist composition containing a resin component having a structural unit containing a group which is dissociated under the action of an acid and compound represented by the general formula (bd1). In the formula (bd1), Rxto Rxrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Ryto Ryrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, and Rzto Rzrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rxto Rx, Ryto Ryand Rzto Rzhas an anion group, the entire anion moiety may be an n-valent anion, and Mrepresents an m-valent organic cation 

Resist composition, and method of forming resist pattern

A resist composition containing a compound represented by the general formula (bd1-1), (bd1-2) or (bd1-3); in the formula, Rxto Rxrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure; Ryto Ryrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure, Rzto Rzrepresent a hydrocarbon group or a hydrogen atom or may be mutually bonded to form a ring structure. At least one of Rxto Rx, Ryto Ryand Rzto Rzhas an anion group, Mrepresents a sulfonium cation having a sulfonyl group, Rto Reach independently represent a monovalent organic group; provided that at least one of Rto Ris an organic group having an acid dissociable group; and Mrepresents an m-valent organic cation having an electron-withdrawing group. 

Resist composition, method of forming resist pattern, compound, and acid generator

A method for preparing a polymer compound including copolymerizing a monomer (m0-1) and a monomer (m0-2) to obtain a first polymer compound and causing the first polymer compound and an acid component to react with each other to obtain a second polymer compound. In the formulae, Rand Rare each a hydrogen atom, an alkyl group having 1 to 5 carbon atoms and a halogenated alkyl group having 1 to 5 carbon atoms, Vais a divalent hydrocarbon group which may have an ether bond, nis an integer of 0 to 2, Rais a tertiary alkyl ester-type acid dissociable group, Vais a divalent linking group containing a heteroatom, or a single bond, Rais a monovalent organic group, nis an integer of 0 to 3, Rais an acid dissociable group, and nis an integer of 1 to 3. 

Method of preparing polymer compound

A resist composition which generates an acid upon exposure and changes a solubility in a developing solution under an action of the acid, the resist composition containing a base material component whose solubility in the developing solution changes under the action of an acid and an acid generator represented by general formula (b1). In general formula (b-1), Rrepresents an aromatic hydrocarbon group having at least one alkyl group having 3 or more carbon atoms as a substituent, Yrepresents a divalent linking group containing an ester bond (&#x2014;C(&#x2550;O)&#x2014;O&#x2014; or &#x2014;O&#x2014;C(&#x2550;O)&#x2014;), Vrepresents an alkylene group, a fluorinated alkylene group, or a single bond, m is an integer of 1 or more, and Mrepresents an m-valent organic cation.R&#x2014;Y&#x2014;V&#x2014;CF&#x2014;SO(M)&#x2003;&#x2003;(b1)

Resist composition, method for forming resist pattern, compound, and acid generator

A pattern forming method includes forming a first organic film by coating an etching target film with a composition including a polymer including a cross-linkable component, infiltrating an inorganic substance into the first organic film, cross-linking the polymer, forming a second organic film on the first organic film, forming a second organic film pattern by patterning the second organic film, forming a first organic film pattern having a pitch reduced to one-half of a pitch of the second organic film pattern by patterning the first organic film by a self-aligned patterning method that uses the second organic film pattern as a core pattern, forming an etching target film pattern having a pitch reduced to one-half of a pitch of the first organic film pattern by patterning the etching target film by a self-aligned patterning method that uses the first organic film pattern as a core pattern.

Pattern forming method

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component which exhibits changed solubility in a developing solution under action of acid and an acid diffusion control agent, the base component including a structural unit represented by general formula (a0-1) shown below in which R represents H, C1-C5 alkyl group or C1-C5 halogenated alkyl group; Ya represents C; Xa represents a group which forms a divalent cyclic hydrocarbon group with Ya; Rato Rarepresents H, C1-C10 monovalent saturated chain hydrocarbon group or C3-C20 monovalent saturated cyclic hydrocarbon group; the acid diffusion control agent containing an acid which exhibits an acid dissociation constant of 1.5 or more. 

A pattern forming method includes forming a first film patterned in a line and space shape on an underlayer film, the line and space shape including lines and a space arranged therebetween, forming a second film to cover the first film, removing the second film to form the second film on a side surface of the first film in a line shape, forming a third film to cover the first film and the second film, removing the third film formed on the first film and the second film to form the third film on a side surface of the second film, and converting the third film after removing the third film formed on the first film and the second film, wherein the third film is comprised of an organic metal compound, the organic metal compound having characteristic to increase etching tolerance when the organic metal compound undergoes a predetermined process.

Pattern forming method for forming a pattern

A resist composition which generates an acid upon exposure and whose solubility on a developing solution changes under the action of the acid, including a polymer compound having units represented by formulas (a0-1), (a0-2), and (a0-3) in an amount of 0 to 10 mol %. In the formulas, R is a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Vaand Vaare a divalent hydrocarbon group, nand neach are an integer of 0 to 2, Ra&#x2033; is a specific acid dissociable group, Vais a divalent linking group containing a hetero atom or a single bond, Rais a monovalent organic group, nis an integer of 0 to 3, and nis an integer of 1 to 3. 

Resist composition, method for forming resist pattern, and polymer compound

Growing community of inventors

Kawasaki, Japan

Yoshitaka Komuro