Panasonic Corporation

Citizen Watch Company, Ltd.

Citizen Holdings Company, Ltd.

Citizen Finedevice Co., Ltd.

Yoshitaka Kinoshita

Hidenori Kamei

Youichi Nonogaki

Atsushi Shiraishi

Ikuo Takahashi

Takayuki Aoki

Takashi Akahane

Satoshi Sohda

Toshihiko Satou

Hiroyuki Tsukada

A method of production of a high insulation resistance, high strength langatate-based single crystal and a langatate-based single crystal are provided. That is, a method of production of a langatate-based single crystal using the Czochralski method of pulling up a crystal from a starting material solution so as to grow a langatate-based single crystal, comprising placing the starting material solution of the single crystal in a platinum crucible and growing the single crystal using the Z-axis as the growth axis in a growth atmosphere of a mixed gas comprising an inert gas in which an oxidizing gas is contained in an amount greater than 5 vol %.

Method of production of langatate-based single crystal and langatate-based single crystal

Provided is a surface acoustic wave device using a novel and steadily suppliable piezoelectric material that is resistant to a high-temperature environment and enables the surface acoustic wave device to use a 2 GHz to 2.5 GHz band or higher. The surface acoustic wave device includes: a piezoelectric substrate formed from a monocrystal of gehlenite (CAS: Ca2Al(AlSi)O7); and interdigital transducers formed on a surface acoustic wave propagation plane of the piezoelectric substrate.

Surface acoustic wave device

The present invention is directed to the provision of a liquid crystal panel that can solve the problem that bubbles are formed in a liquid crystal layer. More specifically, the invention provides a liquid crystal panel includes a first plastic substrate; a second plastic substrate, a liquid crystal layer sealed between the first and second plastic substrates, a transparent conductive layer provided on the first or the second plastic substrate and having a patterned region for driving the liquid crystal layer, and an opening provided in the patterned region of the transparent conductive layer.

Liquid crystal panel having an opening in transparent conductive layer for venting gas

A semiconductor light emitting element includes a substratehaving a defect concentrated regionwhich has a crystal defect density higher than in the other region. On the substrate, a semiconductor layeris formed. On the defect concentrated region, a first electrodeis formed. On the semiconductor layer, a second electrodeis formed.

Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated region

A plurality of semiconductor layers including a light-emitting layer () are formed on the main surface of a substrate () which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer () containing indium is formed between the light-emitting layer () and the substrate (), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.

Nitride-based semiconductor light-emitting diode and illuminating device

A semiconductor light emitting device includes a substrateincluding a group III-V nitride semiconductor; a first-conductivity-type layerformed on the substrate, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layerformed on the first semiconductor layer; and a second-conductivity-type layerformed on the active layer, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layerincludes an intermediate layermade of GaInN (0&#x3c;x&#x3c;1).

Semiconductor light emitting device

A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlGaInN (wherein 0.001&#x2266;x&#x3c;0.1, 0&#x3c;y&#x3c;1 and x+y&#x3c;1).

Growing community of inventors

Tokyo, Japan

Yoshitaka Kinoshita