Tokyo Electron Limited

Yoshitaka Enoki

Tsuyoshi Moriya

Jun Ogawa

Shigehiro Miura

Takuya Mori

Masato Yonezawa

Masahiko Kaminishi

Haruhiko Furuya

Michihiro Takahashi

Yuji Sawada

Yoshinobu Ise

Takehiro Fukada

Tokio Toyama

A contaminant detection system includes a light source configured to emit excitation light on an object to be inspected; a detector configured to detect fluorescence emitted from a contaminant adhering to the object to be inspected; and a processor. The fluorescence is caused by emission of the excitation light from the light source onto the object to be inspected. The processor is configured to perform a determination of a location of the contaminant and a type of the contaminant, based on the fluorescence emitted from the contaminant; and output a result of the determination.

Contaminant detection system, contaminant detecting method, and semiconductor manufacturing apparatus

A deposition method performed by a deposition apparatus is provided. The deposition apparatus includes an antenna that forms an inductive magnetic field in a plasma processing region; and a rotary table that revolves a substrate around a rotational center of the rotary table. The method includes: supplying an ignition gas containing a noble gas and an additive gas to the plasma processing region; setting electric power supplied to the antenna to a first predetermined value to form a plasma of the ignition gas; increasing the electric power to a second predetermined value; stopping the supply of the additive gas; switching a gas supplied to the plasma processing region from the ignition gas to a gas for forming the film; and lifting an end of the antenna on a side closer to the rotational center while maintaining a height of another end of the antenna.

Deposition method

A film deposition method includes an adsorption step of adsorbing a first reaction gas onto a substrate by supplying the first reaction gas from a first gas supplying portion for a predetermined period without supplying a reaction gas from a second gas supplying portion while separating a first process area and a second process area by supplying a separation gas from a separation gas supplying portion and rotating a turntable; and a reaction step of having the first reaction gas adsorbed onto the substrate react with a second reaction gas by supplying the second reaction gas from the second gas supplying portion for a predetermined period without supplying a reaction gas from the first gas supplying portion while separating the first process area and the second process area by supplying the separation gas from the separation gas supplying portion and rotating the turntable.

Apparatus and method of forming thin film including adsorption step and reaction step

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Iwate, Japan

Yoshitaka Enoki