Kabushiki Kaisha Toshiba

Hochiki Corporation

Yoshitaka Egawa

Shinji Ohsawa

Yukio Endo

Yoriko Tanaka

Nobuo Nakamura

Hiroto Honda

Nozomu Harada

Yoshinori Iida

Nagataka Tanaka

Hiromi Kusakabe

Hidenari Matsukuma

Yoshiyuki Matsunaga

Goh Itoh

Ryohei Miyagawa

Hiroshi Shima

Tadashi Sugiki

Ikuko Inoue

Tetsuya Yamaguchi

Koichi Kokubun

Hiroshige Goto

Okio Yoshida

Fumio Izawa

Hiroki Miura

Isao Asano

Naoto Yamano

Ryuta Okamoto

Makoto Hoshino

Yasushi Nishimura

Tsuyoshi Arakawa

Yoshiyuki Tomizawa

Yoshinori Ilda

According to one embodiment, pixels are divided by a grid set diagonally to a column direction, a green photoelectric conversion film is provided for each of the pixels and arranged to overlap a red photoelectric conversion layer in a depth direction, and a blue photoelectric conversion layer is arranged to be overlapped by the green photoelectric conversion film in a depth direction.

Solid-state imaging device

According to one embodiment, a solid state image sensor has a photoelectric conversion element array, a light collecting optical element array, wavelength-selective elements and a reflecting unit. Wavelength-selective elements pass light of the color which is to be detected, and reflect other colors. The reflecting unit further reflects the light that has been reflected by the wavelength-selective elements. The cell includes photoelectric conversion elements for three different light colors. A microlens serving as a light collecting optical element is arranged corresponding to the cell. The reflecting unit includes at least a first reflecting surface and a second reflecting surface. The first reflecting surface faces the wavelength-selective elements. In every cell, the second reflecting surface is enclosed between wavelength-selective elements and the first reflecting surface.

Solid state imaging device

According to one embodiment, a photoelectric converting layer, a charge accumulating layer, and a light collecting unit are provided. The photoelectric converting layer is formed at a back surface side of a semiconductor substrate. The charge accumulating layer is formed at a front surface side of the semiconductor substrate, and accumulates charges photoelectric-converted by the photoelectric converting layer. The light collecting unit makes light incident to the back surface side of the semiconductor substrate to be collected on the photoelectric converting layer not to be incident to the charge accumulating layer.

According to one embodiment, there is a solid-state imaging device including an imaging region. In the imaging region, a plurality of pixels are arranged two-dimensionally. A first inclination angle of a light incidence surface of a dichroic filter in a first pixel among the plurality of pixels relative to a normal to a surface of a semiconductor substrate and a second inclination angle of a light incidence surface of a dichroic filter in a second pixel located farther from a center of the imaging region than the first pixel among the plurality of pixels relative to the normal are decided on so as to make, for light incident on the imaging region, a filter property of the dichroic filter in the first pixel and a filter property of the dichroic filter in the second pixel equalized.

Solid-state imaging device and manufacturing method of the same

An interlocking source alarm output processing unit outputs alarm indicating an interlocking source and transmits event signal indicating the abnormality to other alarm device. An interlocking destination alarm output processing unit outputs alarm indicating an interlocking destination. An interlocking source alarm stop processing unit transmits the event signal and stops an output of the alarm, upon detecting an operation to an alarm stopping unit while outputting the alarm indicating the interlock source. An interlocking destination alarm stop processing unit stops an output of the alarm indicating the interlocking destination and transmits the event signal for stopping the alarm, when an operation to the alarm stopping unit is detected while outputting the alarm indicating the interlocking destination, while the interlocking destination alarm stop processing unit stops an output of the alarm indicating the interlocking destination, when the event signal from the other alarm device is received.

Alarm device

According to one embodiment, an image sensor, which is a solid imaging device, includes a photoelectric conversion element array, a condensing optical element array, filter and reflector units, and a reflective unit. The reflective unit further reflects a light reflected by the filter and reflector units. The condensing optical element is arranged so that it contains a first photoelectric conversion element and a portion of a second or a third photoelectric conversion element, which are adjacent to the first photoelectric conversion element. The arrangement of the photoelectric conversion elements may comprise a cell. The reflective unit includes at least a first reflective surface and a second reflective surface. The first reflective surface is opposite to the filter and reflector units. The second reflective surface surrounds the filter and reflector units and the first reflective surface for each cell.

According to one embodiment, a solid-state imaging device includes an imaging area, a vertical line drive circuit, and a control circuit. The imaging area is provided with a plurality of unit pixels arrayed like a two-dimensional matrix. Each unit pixel includes a photoelectric conversion element, a read transistor, an amplifier transistor, and a reset transistor. The vertical line drive circuit is configured to select and drive the unit pixels at a unit of row, and to set a signal storage time of the photoelectric conversion element of each driven unit pixel. The control circuit connected to the vertical line drive circuit, is configured to execute a variable control of the signal storage time at a unit of row of the unit pixel.

According to one embodiment, provided are a first photoelectric conversion layer provided for a first wavelength band, a second photoelectric conversion layer provided for a second wavelength band, and a color separation element adapted to separate an incident light into a transmission light including the first wavelength band and a reflection light including the second wavelength band, wherein an angle of incidence of the incident light with respect to a reflection surface of the color separation element is set so that a vertically polarized light and a horizontally polarized light are included in the reflection light.

According to one embodiment, a solid-state imaging device includes a pixel array unit where pixels are disposed in a matrix and a column amplifying circuit that is disposed at an end of the pixel array unit and amplifies a unit signal of a unit pixel read from each pixel with at least first and second amplification factors, and outputs a plurality of amplified signals.

According to one embodiment, a pixel outputs a photoelectrically converted signal. A reference ramp generating circuit generates a first ramp wave and a second ramp wave having a step width smaller than that of the first ramp wave. A column ADC circuit performs switching between the first ramp wave and the second ramp wave on the basis of the signal level of the signal from the pixel, compares the ramp wave with the signal level, and detects a signal component of the pixel by CDS.

According to one embodiment, a solid-state imaging device includes a pixel outputting a photoelectrically converted signal, an ADC circuit disposed in an edge portion of a pixel area to convert an analog signal of the pixel into a digital signal on the basis of a result of comparison between a signal level output from the pixel and a ramp wave which is a reference, and a multi-ramp-wave generating circuit generating a plurality of ramp waves with different amplitudes and combining the plurality of ramp waves to obtain the ramp wave.

Solid state imaging device with a multi-ramp-wave generating unit

According to one embodiment, a solid-state imaging apparatus includes: a pixel unit in which pixels are arranged in a matrix form; an electronic shutter scanning circuit controlling an accumulation time of the pixels for each line of the pixel unit; a flicker correction circuit correcting flicker generated in a signal imaged in the pixel unit for each line based on a signal of the pixels of each of the lines in which the accumulation times are different from each other.

Solid-state imaging apparatus

The alarming device of the present invention includes a battery power supply; a sensor section that outputs an anomaly detection signal in the case of detecting an anomaly; a alert section that outputs an anomaly alarm based on the anomaly detection signal; a reception circuit section that receives an event signal from another alarming device; a transmission circuit section that transmits an event signal to the other alarming device; an anomaly monitoring section that, when the sensor section has detected an anomaly, causes the alert section to output the anomaly alarm based on the anomaly detection signal and causes the transmission circuit section to transmit an event signal according to the anomaly of the alarming device to the other alarming device, and on the other hand, when the reception circuit section has received an event signal according to an anomaly of the other alarming device from the other alarming device, causes the alert section to output the anomaly alarm; and a communication control section that detects a predetermined event and performs communication control by adjusting the transmitting and receiving of an event signal by the transmission circuit section and the reception circuit section.

Alarming device

According to one embodiment, a solid-state imaging device includes a pixel unit, a flicker detecting unit, a flicker-level estimating unit, and a flicker correcting unit. The flicker detecting unit detects, based on a magnitude relation of a signal amount in each of lines formed in the pixel unit, presence or absence of a flicker. The flicker-level estimating unit estimates a flicker level in each of the lines of the next frame. The flicker correcting unit corrects, for each of the lines, a flicker that occurs in a signal of an image picked up by the pixel unit.

An image pickup device includes a signal processing unit which processes a signal generated by separating a luminous signal into wavelength components of two or more colors by use of a sensor unit including two-dimensionally arranged pixels to which a wavelength separating unit for separating light wavelengths is arranged at a front face of a photoelectric converting element which converts the luminous signal condensed by an optical lens unit into electric signals, wherein the optical lens unit includes at least one optical lens having different focusing positions in accordance with the wavelengths of the luminous signal, and the signal processing unit includes an outline signal generating unit which extracts an outline signal from an output signal of the sensor unit.

Growing community of inventors

Yokohama, Japan

Yoshitaka Egawa