Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Yoshitaka Dozen

Eiji Sugiyama

Takuya Tsurume

Daiki Yamada

Hidekazu Takahashi

Naoto Kusumoto

Tomoko Tamura

Koji Dairiki

Hisashi Ohtani

Tomoyuki Aoki

Kaori Ogita

Junya Maruyama

Hisao Ikeda

Kohei Yokoyama

Shunpei Yamazaki

Hiroyuki Miyake

Kouhei Toyotaka

Hideaki Shishido

Yasuhiro Jinbo

Kyosuke Ito

Takaaki Nagata

Shinichi Hirasa

Nobuharu Ohsawa

Hideaki Kuwabara

Shinichi Kawato

Katsuhiro Kikuchi

Yuto Tsukamoto

Mikio Yukawa

Manabu Niboshi

Yoshiharu Hirakata

Kengo Akimoto

Hiromichi Godo

Tatsuya Arao

Yuugo Goto

Satoshi Inoue

Yumiko Ohno

Takashi Ochi

Naoyuki Senda

Yumiko Fukumoto

Tomohiro Kosaka

Koki Inoue

Nozomi Horikoshi

Shigeru Tamaki

Tomofumi Osaki

An authentication system for an electronic device with a high security level is provided. The authentication system includes a data retention means that accumulates first data related to a state of the electronic device being used by a first user registered in advance and generates a first data group, a first authentication means that authenticates a second user operating the electronic device as the first user and releases a locked state, a data acquisition means that acquires second data related to a state of the electronic device being used by the second user in a state where the locked state is released, and a second authentication means that authenticates the second user as the first user on the basis of the first data group and the second data and sets the electronic device to the locked state when the second user is not authenticated. The data retention means has a function of deleting the oldest first data of the plurality of pieces of the first data included in the first data group.

Authentication system for electronic device

Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3×2.

Display device

Provided is a display device with extremely high resolution, a display device with higher display quality, a display device with improved viewing angle characteristics, or a flexible display device. Same-color subpixels are arranged in a zigzag pattern in a predetermined direction. In other words, when attention is paid to a subpixel, another two subpixels exhibiting the same color as the subpixel are preferably located upper right and lower right or upper left and lower left. Each pixel includes three subpixels arranged in an L shape. In addition, two pixels are combined so that pixel units including subpixel are arranged in matrix of 3&#xd7;2.

The present invention has an object to perform a peeling treatment in a short time. Peeling is performed while a peeling layer is exposed to an atmosphere of an etching gas. Alternatively, peeling is performed while an etching gas for a peeling layer is blown to the peeling layer in an atmosphere of an etching gas. Specifically, an etching gas is blown to a part to be peeled while a layer to be peeled is torn off from a substrate. Alternatively, peeling is performed in an etchant for a peeling layer while supplying an etchant to the peeling layer.

Manufacturing method of semiconductor device using peeling

A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.

Method for manufacturing semiconductor device

Occurrence of a crosstalk phenomenon is prevented in a light-emitting device including a tandem element. The light-emitting device includes an insulating layer, a first lower electrode over the insulating layer, a second lower electrode over the insulating layer, a partition positioned over the insulating layer and between the first lower electrode and the second lower electrode, a first light-emitting unit over the first lower electrode, the partition, and the second lower electrode, intermediate layers over the first light-emitting unit, a second light-emitting unit over the intermediate layer, and an upper electrode over the second light-emitting unit. The partition has a first depression.

Light-emitting device and manufacturing method thereof

It is an object of the present invention to provide a semiconductor device where, even in a case of stacking a plurality of semiconductor elements provided over a substrate, the stacked semiconductor elements can be electrically connected through the substrate, and a manufacturing method thereof. According to one feature of the present invention, a method for manufacturing a semiconductor device includes the steps of selectively forming a depression in an upper surface of a substrate or forming an opening which penetrates the upper surface through a back surface; forming an element group having a transistor so as to cover the upper surface of the substrate and the depression, or the opening; and exposing the element group formed in the depression or the opening by thinning the substrate from the back surface. A means for thinning the substrate can be performed by partially removing the substrate by performing grinding treatment, polishing treatment, etching by chemical treatment, or the like from the back surface of the substrate.

Semiconductor device and manufacturing method thereof

Occurrence of a crosstalk phenomenon in a light-emitting device is inhibited. The light-emitting device includes an insulating layer; a first lower electrode over the insulating layer; a second lower electrode over the insulating layer; a structure over the insulating layer and between the first lower electrode and the second lower electrode; a first partition wall between the first lower electrode and the structure, over the insulating layer; a second partition wall between the second lower electrode and the structure, over the insulating layer; a first light-emitting unit over the first lower electrode, the first partition wall, the structure, the second partition wall, and the second lower electrode; an intermediate layer over the first light-emitting unit; a second light-emitting unit over the intermediate layer; and an upper electrode over the second light-emitting unit.

Light-emitting device

Manufacturing method of semiconductor device including peeling layers from substrates by etching

The semiconductor device of the invention includes a transistor, an insulating layer provided over the transistor, a first conductive layer (corresponding to a source wire or a drain wire) electrically connected to a source region or a drain region of the transistor through an opening portion provided in the insulating layer, a first resin layer provided over the insulating layer and the first conductive layer, a layer containing conductive particles which is electrically connected to the first conductive layer through an opening portion provided in the first resin layer, and a substrate provided with a second resin layer and a second conductive layer serving as an antenna. In the semiconductor device having the above-described structure, the second conductive layer is electrically connected to the first conductive layer with the layer containing conductive particles interposed therebetween. In addition, the second resin layer is provided over the first resin layer.

It is an object of the present invention to reduce the cost of a wireless chip, further, to reduce the cost of a wireless chip by enabling the mass production of a wireless chip, and furthermore, to provide a downsized and lightweight wireless chip. A wireless chip in which a thin film integrated circuit peeled from a glass substrate or a quartz substrate is formed between a first base material and a second base material is provided according to the invention. As compared with a wireless chip formed from a silicon substrate, the wireless chip according to the invention realizes downsizing, thinness, and lightweight. The thin film integrated circuit included in the wireless chip according to the invention at least has an n-type thin film transistor having an LDD (Lightly Doped Drain) structure, a p-type thin film transistor having a single drain structure, and a conductive layer functioning as an antenna.

Wireless chip and manufacturing method thereof

The present invention provides a thin and bendable semiconductor device utilizing an advantage of a flexible substrate used in the semiconductor device, and a method of manufacturing the semiconductor device. The semiconductor device has at least one surface covered by an insulating layer which serves as a substrate for protection. In the semiconductor device, the insulating layer is formed over a conductive layer serving as an antenna such that the value in the thickness ratio of the insulating layer in a portion not covering the conductive layer to the conductive layer is at least 1.2, and the value in the thickness ratio of the insulating layer formed over the conductive layer to the conductive layer is at least 0.2. Further, not the conductive layer but the insulating layer is exposed in the side face of the semiconductor device, and the insulating layer covers a TFT and the conductive layer.

Semiconductor device and manufacturing method of semiconductor device

Growing community of inventors

Tochigi, Japan

Yoshitaka Dozen