Hitachi Metals, Ltd.

Yoshitaka Chiba

Tsutomu Inui

Rokuo Ichiyasu

Shunichiro Matsumoto

Rikizo Watanabe

Noriyoshi Hirao

Toru Sugihara

Kenji Hasegawa

A rare earth metal-iron group metal target for a magneto-optical disk is produced by mixing power (a) produced by the rapid quenching treatment of an alloy composed of at least one rare earth metal and at least one iron group metal in a composition range which permits the formation of an eutectic structure, with powder (b) from at least one iron group metal in an amount necessary for meeting the composition requirements of the target; and subjecting the resulting mixture to pressure sintering in vacuum or in an inert gas atmosphere at a temperature lower than a liquid phase-appearing temperature of the mixture to produce a rare earth metal-iron group metal intermetallic bonding layer betwen the particles.

Rare earth metal-iron group metal target, alloy powder therefor and

A rare earth metal-iron group metal target for a magneto-optical disk is produced by mixing powder (a) produced by the rapid quenching treatment of an alloy composed of at least one rare earth metal and at least one iron group metal in a composition range which permits the formation of an eutectic structure, with powder (b) from at least one iron group metal in an amount necessary for meeting the composition requirements of the target; and subjecting the resulting mixture to pressure sintering in vacuum or in an inert gas atmosphere at a temperature lower than a liquid phase-appearing temperature of the mixture to produce a rare earth metal-iron group metal intermetallic bonding layer between the particles.

A high melting metal silicide sputtering target which comprises a fine texture whose stoichiometric composition grains of MSi.sub.2, where M represents a high melting metal, have a maximum grain size of 20 .mu.m, whose free silicon grains have a maximum grain size of 50 .mu.m and whose oxygen content is not more than 200 ppm and has a density ratio to the theoretical density of 99% or more has good film characteristics including the reduction in the number of grains formed on the sputtered film and is useful as an electrode material or a wiring material in semi-conductor devices.

Sputtering target and process for preparing the same

The present invention provides Ni-Cr-W alloys consisting essentially of, by weight, 0.001 - 0.1% carbon, 0.05 - 0.7% titanium and/or niobium, 18 - 25% chromium and 16 - 22% tungsten, the total content of chromium plus tungsten being from 38 to 44% and the balance being essentially nickel with incidental impurities.

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Gyoda, Japan

Yoshitaka Chiba