National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Agency

Canon Anelva Corporation

Yoshishige Suzuki

Shinji Yuasa

Akio Fukushima

Taro Nagahama

Takayuki Nozaki

Hiroki Noguchi

Kazutaka Ikegami

Hitoshi Kubota

Hiroki Maehara

Yoshinori Nagamine

Yoichi Shiota

Takurou Ikeura

Ashwin Tulapurkar

A resistance change type memory includes a variable resistance element connected between first and second bit lines and a write control circuit including first and second transistors each including a terminal connected to the first bit line. The write control circuit controls write to the variable resistance element. The write control circuit supplies a second voltage to the first bit line with a first pulse width via the second transistor in the ON state after supplying a first voltage to the first bit line via the first transistor.

Resistance change type memory including write control circuit to control write to variable resistance element

To realize an electric field-driven type ferromagnetic resonance excitation method of low power consumption using an electric field as drive power, and provide a spin wave signal generation element and a spin current signal generation element using the method, a logic element using the elements, and a magnetic function element such as a high-frequency detection element and a magnetic recording device using the method. A magnetic field having a specific magnetic field application angle and magnetic field strength is applied to a laminate structure in which an ultrathin ferromagnetic layer sufficiently thin so that an electric field shield effect by conduction electrons does not occur and a magnetic anisotropy control layer are directly stacked on each other and an insulation barrier layer and an electrode layer are arranged in order on an ultrathin ferromagnetic layer side. An electric field having a high-frequency component of a magnetic resonance frequency is then applied between the magnetic anisotropy control layer and the electrode layer, thereby efficiently exciting ferromagnetic resonance in the ultrathin ferromagnetic layer.

Electric field ferromagnetic resonance excitation method and magnetic function element employing same

A magneto-resistive device has a magnetic free layer (), a magnetic pinned layer () having a magnetic moment larger than that of the magnetic free layer, and an intermediate layer () provided between the magnetic free layer and the magnetic pinned layer. The negative-resistance device is characterized in that the negative-resistance device shows negative resistance by making the magnetic free layer continually change the magnetization direction along with the increase of the voltage which is applied to a magneto-resistive device so that electrons flow into the negative-resistance device from a magnetic free layer side.

Negative-resistance device with the use of magneto-resistive effect

A strip line integrated microwave generating element and a microwave detecting element comprises a signal electrode and a ground electrode. The element has a magnetic tunnel junction structure which includes a magnetization fixed layer, a MgO tunnel barrier layer, and a magnetization free layer. The magnetization free layer is 200 nm square or smaller in a cross-sectional area. The magnetization fixed layer is in contact with either one of the signal electrode and the ground electrode while the magnetization free layer of the element being in contact with the other. The element is smaller than the electrodes and mounted on a part of the signal electrode or the ground electrode. A MR ratio of the element is of 100% or more. A resistance value of the element is from 50&#x3a9; to 300&#x3a9;. The resistance of the element is matched with an impedance of the microwave transmission line.

Microwave transmission line integrated microwave generating element and microwave transmission line integrated microwave detecting element

By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided. The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film); an ultrathin ferromagnetic layer disposed on the underlayer; an insulating layer disposed on the ultrathin ferromagnetic layer; and a ferromagnetic electrode disposed on the insulating layer.

Tunnel magnetoresistance element having a double underlayer of amorphous MgO and crystalline MgO(001)

Tunnel magnetoresistance element

Growing community of inventors

Tsukuba, Japan

Yoshishige Suzuki