Mitsubishi Materials Corporation

Mitsubishi Metal Corporation

Lg Electronics Inc.

Toyota Jidosha Kabushiki Kaisha

Samsung Sdi Co., Inc.

The University of Tokyo

Yoshirou Kuromitsu

Yoshiyuki Nagatomo

Takeshi Kitahara

Hiroshi Tonomura

Nobuyuki Terasaki

Toshiyuki Nagase

Kazuhiro Akiyama

Hideaki Sakurai

Hiroya Ishizuka

Hideaki Yoshida

Yoshio Kanda

Kunio Sugamura

Ginjiro Toyoguchi

Masahito Komasaki

Koya Arai

Kimihito Nishikawa

Makoto Toriumi

Touyou Ohashi

Michio Yuzawa

Tadaharu Tanaka

Kazunari Maki

Tomoyuki Watanabe

Hiroto Uchida

Hiroyuki Mori

Naoya Shibata

Hideyuki Miyake

Masakazu Edo

Eung Chul Park

Shuji Nishimoto

Akihito Kumamoto

Toshio Sakamoto

Masato Otsuki

Isao Arai

Hiromasa Hayashi

Yuichi Ikuhara

Yukiya Yamashita

Hirokazu Tanaka

Hiroshi Miyata

Akira Nakabayashi

Masafumi Hatsushika

Kenji Morinaga

Seiji Toyoda

Seung Jae Chung

Joon Min Kim

Hyun Sub Lee

Masao Umezawa

Ryuji Uesugi

Young Cheul Kang

Eun Gi Heo

Young Soo Seo

An insulated heat transfer substrate includes a heat transfer layer formed of aluminum or an aluminum alloy, a conductive layer provided on one surface side of the heat transfer layer, and a glass layer formed between the conductive layer and the heat transfer layer, in which the conductive layer is formed of a sintered body of silver, and a thickness of the glass layer is in a range of 5 &#x3bc;m or larger and 50 &#x3bc;m or smaller.

Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate

A thermoelectric conversion module is a thermoelectric conversion module in which a plurality of thermoelectric conversion elements are electrically connected to each other via a first electrode portion disposed on first end side of the thermoelectric conversion elements and a second electrode portion disposed on the second end side of the thermoelectric conversion elements; a first insulating circuit board provided with a first insulating layer of which at least one surface is made of alumina and the first electrode portion formed of a sintered body of Ag formed on the one surface of the first insulating layer is disposed on the first end side of the thermoelectric conversion elements; and a glass component is present at an interface between the first electrode portion and the first insulating layer.

Thermoelectric conversion module and method for producing thermoelectric conversion module

The present invention provides a ceramic-aluminum bonded body in which Mg-containing oxide having a spinel crystal structure are dispersed in an aluminum member within a range of 2 &#x3bc;m in a thickness direction from a bonded interface with a ceramic member, a segregated portion in which Mg, Si, and O is segregated is formed in the aluminum member in the vicinity of the bonded interface with the ceramic member, mass ratios of Mg, Si, and O between the segregated portion and a position spaced by 10 &#x3bc;m from the bonded interface toward an aluminum member side are within predetermined ranges, and the amount of Mg at the position spaced by 10 &#x3bc;m from the bonded interface toward the aluminum member side is 0.8 mass % or less.

Ceramic-aluminum conjugate, power module substrate, and power module

This power module substrate includes a copper plate that is formed of copper or a copper alloy and is laminated on a surface of a ceramic substrate; a nitride layerthat is formed on the surface of the ceramic substratebetween the copper plate and the ceramic substrate; and an Ag&#x2014;Cu eutectic structure layerhaving a thickness of 15 &#x3bc;m or less that is formed between the nitride layer and the copper plate.

Power module substrate, power module substrate with heat sink, power module, method of manufacturing power module substrate, and copper member-bonding paste

A heat-sink-attached-power module substrate () has a configuration such that either one of a metal layer () and a heat sink () is composed of aluminum or an aluminum alloy, and the other one of them is composed of copper or a copper alloy, the metal layer () and the heat sink () are bonded together by solid phase diffusion bonding, an intermetallic compound layer formed of copper and aluminum is formed in a bonding interface between the metal layer () and the heat sink (), and an oxide is dispersed in an interface between the intermetallic compound layer and either one of the metal layer () composed of copper or a copper alloy and heat sink () composed of copper or a copper alloy in a layered form along the interface.

Heat-sink-attached power module substrate, heat-sink-attached power module, and method for producing heat-sink-attached power module substrate

The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness tof the circuit layer and a thickness tof the second aluminum layer of the metal layer satisfy t&#x3c;t.

Substrate for power modules, substrate with heat sink for power modules, and power module

A power module substrate includes a circuit layer, an aluminum layer arranged on a surface of an insulation layer, and a copper layer laminated on one side of the aluminum layer. The aluminum layer and the copper layer are bonded together by solid phase diffusion bonding.

Power module substrate, power module substrate with heatsink, power module, and method for producing power module substrate

A power module has a copper layer composed of copper or a copper alloy on a surface of a circuit layer to which a semiconductor device is bonded, and a solder layer that is formed by using a solder material is formed between the circuit layer and the semiconductor device. An average crystal grain size which is measured by EBSD measurement in a region having a thickness of up to 30 &#x3bc;m from the surface of the circuit layer in the solder layer is 10 &#x3bc;m or less, the solder layer has a composition that contains Sn as a main component, 0.01 to 1.0% by mass of Ni, and 0.1 to 5.0% by mass of Cu, and a thermal resistance increase rate when a power cycle is loaded 100,000 times is less than 10% in a power cycle test.

Power module

A power module substrate including an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, wherein the circuit layer is composed of copper or a copper alloy, one surface of this circuit layer functions as an installation surface on which an electronic component is installed, the metal layer is formed by bonding an aluminum sheet composed of aluminum or an aluminum alloy, a thickness tof the circuit layer is within a range of 0.1 mm&#x2266;t&#x2266;0.6 mm, a thickness tof the metal layer is within a range of 0.5 mm&#x2266;t&#x2266;6 mm, and the relationship between the thickness tof the circuit layer and the thickness tof the metal layer satisfies t&#x3c;t.

Power module substrate, power module substrate with heat sink, and power module

In a power module according to the present invention, a copper layer composed of copper or a copper alloy is provided at a surface of a circuit layer onto which a semiconductor element is bonded, and a solder layer formed by using a solder material is formed between the circuit layer and the semiconductor element. An alloy layer containing Sn as a main component, 0.5% by mass or more and 10% by mass or less of Ni, and 30% by mass or more and 40% by mass or less of Cu is formed at the interface between the solder layer and the circuit layer, the thickness of the alloy layer is set to be within a range of 2 &#x3bc;m or more and 20 &#x3bc;m or less, and a thermal resistance increase rate is less than 10% after loading a power cycles 100,000 times under a condition where an energization time is 5 seconds and a temperature difference is 80&#xb0; C. in a power cycle test.

Provided is a power module substrate including a ceramic substrate, and a metal plate which contains aluminum or an aluminum alloy, and which is stacked and bonded on a surface of the ceramic substrate, wherein one or more additional elements selected from Ag, Zn, Ge, Mg, Ca, Ga, and Li are solid-solubilized in the metal plate, and the Ag concentration in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.05% by mass and less than or equal to 10% by mass, or the total concentration of Zn, Ge, Mg, Ca, Ga, and Li in the metal plate in the vicinity of the interface with the ceramic substrate is greater than or equal to 0.01% by mass and less than or equal to 5% by mass.

Substrate for power module, substrate with heat sink for power module, power module, method for producing substrate for power module, and method for producing substrate with heat sink for power module

This power module substrate with a heat sink includes a power module substrate having a circuit layer disposed on one surface of an insulating layer, and a heat sink bonded to the other surface of this power module substrate, wherein the bonding surface of the heat sink and the bonding surface of the power module substrate are each composed of aluminum or an aluminum alloy, a bonding layer () having a Mg-containing compound () (excluding MgO) which contains Mg dispersed in an Al&#x2014;Si eutectic composition is formed at the bonding interface between the heat sink and the power module substrate, and the thickness t of this bonding layer () is within a range from 5 &#x3bc;m to 80 &#x3bc;m.

Power module substrate with heat sink, and method for producing power module substrate with heat sink

A power module substrate includes a ceramics substrate composed of SiNhaving a top face. A metal plate composed of aluminum having a purity of 99.99% or more is joined to the top face of the ceramics substrate with a brazing filler metal which includes a melting-point lowering element interposed therebetween. A high concentration section is formed at a joint interface at which the metal plate is joined to the ceramics substrate, has an oxygen concentration greater than an oxygen concentration in the metal plate and in the ceramics substrate, and has a thickness of less than or equal to 4 nm.

Power module substrate, power module, and method for manufacturing power module substrate

A power module substrate includes a ceramics substrate composed of AlOhaving a top face. A metal plate composed of aluminum having a purity of 99.99% or more is joined to the top face of the ceramics substrate with a brazing filler metal which includes silicon interposed therebetween. A high concentration section is formed at a joint interface at which the metal plate is joined to the ceramics substrate, and has a silicon concentration that is more than five times the silicon concentration in the metal plate.

Growing community of inventors

Saitama, Japan

Yoshirou Kuromitsu