Sony Corporation

Hamamatsu-photonics K.k.

Pioneer Corporation

Nippon Hoso' Kyokai

Futaba Corporation

Sony Group Corporation

Yoshiro Takiguchi

Shoji Hirata

Tsunenori Asatsuma

Shigeo Itoh

Yoshiyuki Okuda

Yuki Honda

Hidekazu Kawanishi

Masateru Taniguchi

Kazuhito Nakamura

Akira Kobayashi

Norifumi Egami

Hiroyuki Miyahara

Hisayoshi Motobayashi

Masakazu Namba

Yoshiyuki Hirano

Toshihisa Watabe

Kenta Miya

Saburo Okazaki

Masahiro Murayama

Tatsushi Hamaguchi

Noriyuki Futagawa

Nobuyasu Negishi

Akio Furukawa

Takahiro Koyama

Takahiro Niiyama

Kazuto Sakemura

Shigeki Miyazaki

Shoichiro Izumi

Daisuke Imanishi

Kaori Naganuma

Hitoshi Domon

A first semiconductor device according to an embodiment of the present disclosure includes: a semiconductor element; a first housing member and a second housing member that house the semiconductor element; a first base layer formed on a bonded surface of the first housing member to the second housing member; a second base layer formed on a bonded surface of the second housing member to the first housing member; a solder bonding section that bonds the first housing member and the second housing member with the first base layer and the second base layer interposed in between; and a solder adsorption layer provided on at least one of the bonded surface of the first housing member or the bonded surface of the second housing member to be apart from the first base layer and the second base layer.

Semiconductor device

There is provided a semiconductor light emitting device that allows the internal resistance to be improved. A semiconductor light emitting device according to an embodiment of the present disclosure includes: a light emitting element; a first housing member and a second housing member at least one of which has a wiring structure; and an electrically conductive bonding section. The first housing member and the second housing member house the light emitting element. The wiring structure electrically couples the light emitting element and an outside. The electrically conductive bonding section bonds the first housing member and the second housing member. The electrically conductive bonding section is electrically coupled to the wiring structure.

Semiconductor light emitting device

A light-emitting device including: a package including a light-emitting element, a reflection member that reflects light outputted from the light-emitting element, and a sealed space that accommodates the light-emitting element and the reflection member; a base plate on which a plurality of the packages is mounted; and lenses opposed to the base plate with the plurality of packages interposed therebetween, the lenses being opposed to the respective packages.

Light-emitting device and projection display apparatus

A light emitting element includes a stacked structurein which a first compound semiconductor layer, an active layerand a second compound semiconductor layermade of GaN-based compound semiconductors are stacked, a mode loss acting portionprovided on the second compound semiconductor layerand configuring a mode loss acting regionthat acts upon increase or decrease of oscillation mode loss, a second electrode, a second light reflection layer, a first light reflection layer, and a first electrode. A current injection region, a current non-injection inner side regionthat surrounds the current injection regionand a current non-injection outer side regionthat surrounds the current non-injection inner side regionare formed on the stacked structure, and a projection image of the mode loss acting regionand a projection image of the current non-injection outer side regionoverlap with each other.

Light emitting element

Disclosed herein is a packing container including: a packing container body including a leading-out section which contains an optical probe having a first end section for incoming of a laser beam and a second end section for outgoing of the incoming laser beam, which leads out the first end section of the optical probe thus contained to the exterior and which is sealed, and a window section by which the laser beam going out from the second end section of the contained optical probe is led out to the exterior; and a light-transmitting member which closes the window section and permits the laser beam to pass therethrough.

Packing container, method of packing optical probe, laser system, and checking method

An optical fiber adaptor includes: an optical fiber adaptor body including an insertion hole in which to insert a ferrule of an optical fiber plug, and a mounting section to which to mount a lock nut of the optical fiber plug having the ferrule inserted in the insertion hole; a light-transmitting sleeve which is provided in the insertion hole and which surrounds the ferrule inserted in the insertion hole; a first detection section operable to optically detect, from the outer peripheral side of the sleeve, whether or not the ferrule is inserted in the insertion hole; and a second detection section operable to detect the position of the lock nut mounted to the mounting section.

Optical fiber adaptor and laser system

A laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

Laser diode and method of manufacturing the same

A projection stereoscopic display includes: a stereoscopic display optical system receiving linearly polarized light from the light source and displaying a first picture and a second picture both having binocular parallax by linearly polarized light with polarization directions orthogonal to each other, in which the stereoscopic display optical system includes: a reflective liquid crystal panel modulating and reflecting linearly polarized light from the light source in response to a picture signal, a first polarizing device splitting the first picture from reflected light from the reflective liquid crystal panel, a retardation device converting the polarization direction of the first picture into a direction orthogonal thereto, and a second polarizing device splitting the second picture from reflected light from the reflective liquid crystal panel, and superimposing the second picture on the first picture of which the polarization direction is converted by the retardation device.

Projection stereoscopic display

An imaging apparatus includes an electron emission array having electron sources arranged in matrix form, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film, wherein the control and drive circuit is further configured to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film in any one or more blanking periods excluding both a blanking period immediately following the given video signal output period and a blanking period immediately preceding a next video signal output period in which the one or more horizontal scan lines will be selected next time.

Imaging apparatus having electron source array

Provided is a laser diode which realizes NFP with a stable and uniform shape. The laser diode includes, on a semiconductor substrate, an active layer, one or a plurality of strip-shaped current confinement structures confining a current which is injected into the active layer, and a stacked structure including one or a plurality of strip-shaped convex portions extending in an extending direction of the current confinement structure.

A laser diode capable of effectively inhibiting effects of feedback light is provided. A laser diode includes a substrate, and a laminated structure including a first conductive semiconductor layer, an active layer having a light emitting region, and a second conductive semiconductor layer having a projecting part on the surface thereof, on the substrate, wherein a feedback light inhibition part is provided on a main-emitting-side end face, and effects of feedback light in the vicinity of lateral boundaries of the light emitting region are inhibited by the feedback light inhibition part.

Laser diode

An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to cause the electron sources included in unselected one or more horizontal scan lines not selected in the given video signal output period to emit electrons toward the photoelectric conversion film in a blanking period immediately preceding the given video signal output period.

Imaging apparatus having electron source array that emits electrons during a blanking period

An imaging apparatus includes an electron emission array having electron sources arranged in matrix form and having a plurality of horizontal scan lines, a photoelectric conversion film opposed to the electron emission array, and a control and drive circuit configured to select one or more of the horizontal scan lines in a given video signal output period and to cause the electron sources included in the selected one or more horizontal scan lines to emit electrons toward the photoelectric conversion film to produce a video signal, wherein the control and drive circuit is configured to control electron emission of the electron emission array in a blanking period in response to a signal level of the video signal produced in the given video signal output period.

A laser diode capable of operating at high temperature by preventing carrier overflow is provided. A laser diode includes an AlGaInP-based laminate configuration including at least a lower cladding layer, an active layer and an upper cladding layer in this order, wherein the AlGaInP-based laminate configuration receives a larger compressive stress than 2200 ppm from a stress source.

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Kanagawa, Japan

Yoshiro Takiguchi