Mitsubishi Denki Kabushiki Kaisha

Nippon Telegraph and Telephone Corporation

Yoshiro Ohmachi

Takashi Nishimura

Kotaro Mitsui

Nobuyoshi Ogasawara

Takahiko Oohara

Yoshiaki Kadota

A method for manufacturing a solar cell which includes at least a first GaAs layer of a first conductivity type and a second GaAs layer of a second conducitivity type sequentially formed on a first main surface of an Si substrate of the first conductivity type, a first electrode formed on a second main surface opposite to the first main surface of the Si substrate and a second electrode formed on the second GaAs layer. The method includes a first step of forming a layer comprising a material having a thermal expansion coefficient smaller than that of Si on the second main surface of the Si substrate at a temperature close to room temperature and a second step of sequentially forming the first and second GaAs layers on the first main surface of the Si substrate.

Growing community of inventors

Higashiyamato, Japan

Yoshiro Ohmachi