Hamamatsu-photonics K.k.

The University of Tokyo

Yoshiro Nomoto

Yuu Takiguchi

Kazuyoshi Hirose

Takahiro Sugiyama

Yoshitaka Kurosaka

Soh Uenoyama

Takuo Tanemura

Norio Ichikawa

Tadashi Kitahara

A light modulator includes a base layer made of an insulating material having a transmitting property for object light, a conductive pattern layer made of a conductive material, including a plurality of pattern portions arranged periodically, and formed on the base layer, a modulation layer made of an electro-optic polymer, filling a space between the plurality of pattern portions and formed on the conductive pattern layer, and having a refractive index to be changed by applying an electric field, and a reflection layer formed on the modulation layer and reflecting the object light incident from a lower surface of the base layer and transmitted through the modulation layer, and the object light having a phase modulated by being transmitted through the modulation layer and reflected by the reflection layer is output from the lower surface of the base layer to the outside as modulated light.

Optical modulator and optical modulator array

A light modulator of to this embodiment enables high-speed modulation to an SLM using a liquid crystal. The light modulator comprises refractive index regions arranged in a first direction on a reference plane, a region surrounding each refractive index regions and having a refractive index lower than that of each refractive index region, a first conductive film, and a second conductive film. The first conductive film is provided on any one of a pair of side surfaces arranged in the first direction in at least one refractive index region selected from the refractive index regions and belonging to a first group. The second conductive film is provided on any one of the pair of side surfaces so as not to overlap with the first conductive film in at least one refractive index region selected from the refractive index regions and belonging to a second group.

Optical modulator

A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

Light emission device

The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Semiconductor light emitting array with phase modulation regions for generating beam projection patterns

The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

Light-emitting device

A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Semiconductor light-emitting module and control method therefor

An optical property evaluation apparatus evaluates an optical property of an evaluation object, and includes a light source, a polarization beam splitter, a polarization adjuster, a first detector, a second detector, and an analyzer. The analyzer obtains a reflectance when linearly polarized light in a specific direction is incident on the evaluation object based on the detection result by the first detector when the light with which the evaluation object is irradiated is set to be the linearly polarized light in the specific direction. The analyzer obtains a phase property at the reflection of the evaluation object based on the detection result by the first detector or the second detector when the light with which the evaluation object is irradiated is set to have a polarization state different from the linearly polarized light in the specific direction, and a Jones matrix.

Optical property evaluation apparatus and optical property evaluation method

The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

Semiconductor light-emitting element and method for designing phase modulation layer

In a semiconductor light emitting element provided with an active layer, a pair of cladding layersbetween which the active layeris interposed, and a phase modulation layeroptically coupled to the active layer, the phase modulation layerincludes a base layerA and a plurality of different refractive index regionsB having different refractive indices from the base layerA. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layeras a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regionsB is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0&#x3c;r&#x2264;0.3a.

Semiconductor light emitting element

The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

The present embodiment relates to a semiconductor light emitting element having a structure that enables removal of zero-order light from output light of an S-iPM laser. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a base layer and a plurality of modified refractive index regions each of which is individually arranged at a specific position. One of the pair of cladding layers includes a distributed Bragg reflector layer which has a transmission characteristic with respect to a specific optical image outputted along an inclined direction with respect to a light emission surface and has a reflection characteristic with respect to the zero-order light outputted along a normal direction of the light emission surface.

Semiconductor light emitting element and light emitting device including same

A metasurface is capable of modulating input light including a wavelength in a range of 880 nm to 40 &#x3bc;m. The metasurface includes: a GaAs substrate including a light input surface into which input light is input and a light output surface facing the light input surface; an interlayer having a lower refractive index than GaAs and disposed on the light output surface side of the GaAs substrate; and a plurality of V-shaped antenna elements disposed on a side of the interlayer which is opposite to the GaAs substrate side and including a first arm and a second arm continuous with one end of the first arm.

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Hamamatsu, Japan

Yoshiro Nomoto