Tokyo Electron Limited

Nagoya University

University of Tsukuba

Tokyp Electron Limited

Yoshiro Kabe

Junichi Kitagawa

Toshihiko Shiozawa

Masaru Sasaki

Takashi Kobayashi

Masaru Hori

Kikuo Yamabe

Shigenori Ozaki

Nobuhiko Yamamoto

Hikaru Adachi

Hideo Nakamura

Sunao Muraoka

Kazuhiro Isa

Hideyuki Noguchi

A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cmto 2.13 W/cmper unit area of the workpiece.

Method and apparatus for forming silicon oxide film

A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.

Plasma oxidation processing method, plasma processing apparatus and storage medium

An object to be processed which has silicon on its surface is loaded in a processing chamber. A plasma of a processing gas containing oxygen gas and nitrogen gas is generated in the processing chamber. The silicon on the surface of the object to be processed is oxidized by the plasma, thereby forming a silicon oxide film.

A pattern forming method includes preparing a target object including silicon with an initial pattern formed thereon and having a first line width; performing a plasma oxidation process on the silicon surface inside a process chamber of a plasma processing apparatus and thereby forming a silicon oxide film on a surface of the initial pattern; and removing the silicon oxide film. The pattern forming method is arranged to repeatedly perform formation of the silicon oxide film and removal of the silicon oxide film so as to form an objective pattern having a second line width finer than the first line width on the target object.

Pattern forming method and semiconductor device manufacturing method

A selective oxidation process is performed on a gate electrode in a plasma processing apparatus. A wafer W with the gate electrode formed thereon is placed on a susceptorwithin a chamber. Ar gas, Hgas, and Ogas are supplied from an Ar gas supply source, an Hgas supply source, and an Ogas supply sourcein a gas supply systemthrough a gas feed memberinto the chamber. At this time, a flow rate ratio H/Oof Hgas relative to Ogas is set to be 1.5 or more and 20 or less, preferably to be 4 or more, and more preferably to be 8 or more. Further, the pressure inside the chamber is set to be 3 to 700 Pa, such as 6.7 Pa (50 mTorr).

Semiconductor device manufacturing method and plasma oxidation treatment method

A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silicon exposed from the surface of an object to be processed is oxidized by the plasma to form a silicon oxide film.

Plasma oxidizing method, storage medium, and plasma processing apparatus

In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma.

Method for insulating film formation, storage medium from which information is readable with computer, and processing system

To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layerof the wafer W is treated by plasma oxidation to form on the silicon layerto a film thickness Ta silicon oxide film. Next, the wafer W on which the silicon oxide filmis formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide filmis treated by thermal oxidation to thereby form a silicon oxide filmhaving a target film thickness T

Method of forming silicon oxide film and method of production of semiconductor memory device using this method

The present invention provides a method for forming a silicon oxide film, which has excellent insulating properties and higher quality that can enhance a yield in manufacture of semiconductor devices, while keeping advantageous points in a plasma oxidation process. In this method, plasma is generated under a first process condition that a ratio of oxygen in a processing gas is 1% or less and pressure is within a range of 0.133 to 133 Pa, so as to form the silicon oxide film, by oxidizing silicon on a surface of an object to be processed including silicon as a main component, by using the plasma (first oxidation step). Following the first oxidation step, the plasma is generated under a second process condition that the ratio of oxygen in the processing gas is 20% or more and the pressure is within a range of 400 to 1333 Pa, so as to form an additional silicon oxide film, by further oxidizing the surface of the object to be processed, by using the plasma (second oxidation step).

Method for forming silicon oxide film, plasma processing apparatus and storage medium

A plasma oxidation process is performed to form a silicon oxide film on the surface of a target object by use of plasma with an O(D) radical density of 1&#xd7;10[cm] or more generated from a process gas containing oxygen inside a process chamber of a plasma processing apparatus. During the plasma oxidation process, the O(D) radical density in the plasma is measured by a VUV monochromator, and a correction is made to the plasma process conditions.

Plasma oxidation processing method

A polysilicon electrode layer () (a first electrode layer) is formed by forming a polysilicon film on a gate oxide film () on a silicon wafer (). A tungsten layer () (a second electrode layer) is formed on this polysilicon electrode layer (). In addition, a barrier layer () is formed on the polysilicon electrode layer () before the formation of the tungsten layer (). Etching is then conducted using a silicon nitride layer () as the etching mask. Next, an oxide insulating film () is formed on an exposed surface of the polysilicon layer () by plasma oxidation wherein a process gas containing oxygen gas and hydrogen gas is used at a process temperature not less than 300&#xb0; C. With this method, a selective oxidation of the polysilicon electrode layer () can be carried out without oxidizing the tungsten layer ().

Method for manufacturing semiconductor device and plasma oxidation method

A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.

Plasma oxidizing method, plasma processing apparatus, and storage medium

In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing Ointo the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.

Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning

An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, an upper electrode, and an insulating film interposed between the lower electrode and the upper electrode. A surface of the lower electrode on an insulating layer side is nitrided. If the lower electrode is made of polysilicon, nitriding the surface thereof increases oxidation resistance at the time of heat treatment in a post process. Particularly in a DRAM, the capacity of the capacitor is large, and therefore, this effect is significant. Further, leakage current inside the capacitor is also reduced.

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Amagasaki, Japan

Yoshiro Kabe