Hitachi-kokusai Electric Inc.

Kokusai Electric Corporation

L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude

Yoshiro Hirose

Yushin Takasawa

Atsushi Sano

Satoshi Shimamoto

Yoshitomo Hashimoto

Naonori Akae

Yosuke Ota

Hajime Karasawa

Tsukasa Kamakura

Ryota Sasajima

Ryuji Yamamoto

Katsuyoshi Harada

Takaaki Noda

Yoshinobu Nakamura

Kiyohiko Maeda

Norikazu Mizuno

Yugo Orihashi

Shingo Nohara

Kimihiko Nakatani

Kazuyuki Okuda

Tatsuru Matsuoka

Kenji Kanayama

Naofumi Ohashi

Takashi Nakagawa

Kazutaka Yanagita

Ryota Horiike

Kojiro Yokozawa

Hiroshi Ashihara

Takashi Ozaki

Takeo Hanashima

Takafumi Nitta

Tadashi Takasaki

Kenichi Suzaki

Masayuki Asai

Motomu Degai

Yuji Urano

Masaya Nagato

Shingo Okubo

Kotaro Murakami

Tomohide Kato

Osamu Kasahara

Tomiyuki Shimizu

Katsuko Higashino

Ryota Ueno

Kenji Kameda

Masato Terasaki

Yukinao Kaga

Naoharu Nakaiso

Risa Yamakoshi

Takuro Ushida

Jiro Yugami

Naonari Akae

Nanori Akae

There is included (a) supplying a fluorine-containing gas to an interior of a process vessel; (b) exhausting the fluorine-containing gas from the interior of the process vessel while maintaining a state in which fluorine is adhered to the interior of the process vessel; and (c) forming a film on a substrate by supplying a film-forming gas to the substrate accommodated in the interior of the process vessel to which the fluorine is adhered.

Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device

There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is provided a technique capable of improve the uniformity of the film formed on the substrate. According to one aspect of the technique, there is provided a substrate processing method includes: (a) setting a substrate at a first position such that a distance between the first position and a gas supply port of a film-forming auxiliary gas supplier is a first distance, and causing a film-forming auxiliary gas to be adsorbed onto the substrate by supplying the film-forming auxiliary gas to the substrate; and (b) moving the substrate to a second position such that a distance between the second position and a gas supply port of a source gas supplier is a second distance different from the first distance, and forming a film of a predetermined thickness on the substrate by supplying a source gas.

Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus

A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a predetermined number of times, and supplying a second precursor containing the predetermined element and not containing the ligand to the substrate to form a film containing the predetermined element on the seed layer. The process includes alternately performing: supplying a first precursor to the substrate to form an adsorption layer of the first precursor, the first precursor containing the predetermined element and a ligand which is coordinated to the predetermined element and which contains at least one of carbon or nitrogen, and supplying a ligand desorption material to the substrate to desorb the ligand from the adsorption layer of the first precursor.

Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium

There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a predetermined number of times, the first cycle including non-simultaneously performing: supplying a source to the substrate, and supplying a reactant to the substrate, under a first temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively; and forming the second layer by performing a second cycle a predetermined number of times, the second cycle including non-simultaneously performing: supplying the source to the substrate, and supplying the reactant to the substrate, under a second temperature at which neither the source nor the reactant is thermally decomposed when the source and the reactant are present alone, respectively, the second temperature being different from the first temperature.

Method of manufacturing semiconductor device, recording medium, and substrate processing method

There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on a surface of the substrate in a state where the second group is desorbed from the central atom X and the bonding of the first group and the central atom X is maintained.

There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.

Substrate processing apparatus

Described herein is a technique capable of selectively forming a film in a film-forming step. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device including: (a) selectively forming a film on a substrate by supplying a process gas into a process chamber accommodating the substrate, wherein an inhibitor layer is formed on a portion of the substrate such that the substrate acquires a selectivity in an adsorption of the process gas; (b) supplying a cleaning gas containing a component contained in the inhibitor layer into the process chamber accommodating no substrate; and (c) removing a residual component of the cleaning gas in the process chamber.

Method of manufacturing semiconductor device

Described herein is a technique capable of forming a sacrificial film with a high wet etching rate so as to obtain a wet etching selectivity with respect to a movable electrode when manufacturing a cantilever structure sensor. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) placing a substrate with a sacrificial film containing impurities on a substrate support in a process chamber, wherein the sacrificial film is formed so as to cover a control electrode, a pedestal and a counter electrode formed on the substrate; (b) heating the substrate; and (c) modifying the sacrificial film into a modified sacrificial film by supplying an oxygen-containing gas in a plasma state to the substrate to desorb the impurities from the sacrificial film after (b).

Method of manufacturing semiconductor device by supplying gas

Growing community of inventors

Toyama, Japan

Yoshiro Hirose