Matsushita Electric Industrial Co., Ltd.

Yoshiro Fujita

Takehiro Hirai

Mitsuo Tanaka

Akihiro Kanda

Hideya Esaki

A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating films extending on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion layer of the first conduction type, a collector contact diffusion layer of the first conduction type; and a base contact diffusion layer of the second conduction type; locating an end of the emitter diffusion layer and a first end of the base contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the emitter lead-out electrode; and locating a second end of the base contact diffusion layer and an end of the collector contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the collector lead-out electrode.

Method of fabricating semiconductor device

A method of fabricating a semiconductor device includes the steps of forming a base diffusion layer in a predetermined region in a semiconductor substrate of a first conduction type, the base diffusion layer being of a second conduction type; forming first insulating films and simultaneously forming an emitter lead-out electrode and a collector lead-out electrode in regions above an emitter-contact-forming region and a collector-contact-forming region, the first insulating extending films on the emitter and collector lead-out electrodes, the emitter and collector lead-out electrodes including impurity corresponding to the first conduction type; forming second insulating films at sides of the emitter and collector lead-out electrodes; forming a base contact; forming a base lead-out electrode including impurity corresponding to the second conduction type; diffusing the impurity from the emitter lead-out electrode, the collector lead-out electrode, and the base lead-out electrode to form an emitter diffusion layer of the first conduction type, a collector contact diffusion layer of the first conduction type, and a base contact diffusion layer of the second conduction type; locating an end of the emitter diffusion layer and a first end of the base contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the emitter lead-out electrode; and locating a second end of the base contact diffusion layer and an end of the collector contact diffusion layer at positions directly below a portion of the second insulating films which extends at a side of the collector lead-out electrode.

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Osaka, Japan

Yoshiro Fujita