Hitachi, Ltd.

Disco Corporation

U.S. Philips Corporation

Dr. Johannes Heidenhain Gmbh

Yoshio Watanabe

Yuji Miyahara

Junkichi Miura

Mamoru Taki

Hiroyuki Takahashi

Hiroyuki Miyagi

Keiji Tsukada

Masao Kamahori

Satoshi Ozawa

Toshiko Fujii

Koutarou Yamashita

Yasuhisa Shibata

Kentaro Wada

Taro Nogami

Hans-Peter Stormberg

Yoshiteru Nishida

Susumu Yokoo

Kenji Okazaki

Siry Milan

Yoshiki Murakami

Yutaka Misawa

Andreas Manz

Masaaki Nakai

Takeshi Seki

Kasumi Yoshida

Yoshinori Takata

Masafumi Kanetomo

Kenji Tochigi

Satoshi Kumazawa

Takafumi Kikuchi

Yasuhide Matsumura

Nobuyoshi Takano

Masako Mizuno

Katsumi Motoyuki

Yoshio Taichi

Daisuke Shimoda

Norimi Akimori

Isao Ochiai

Thomas Buhrer

A wafer processing method includes: a resin film coating step of coating an upper surface of a wafer with a water-soluble resin and coating a dicing tape exposed between the wafer and a frame with a water-soluble resin, and solidifying the water-soluble resin to form a resin film, a partial resin film removing step of removing the resin film from regions to be divided of the wafer to partially expose the upper surface of the wafer, an etching step of subjecting the regions to be divided of the wafer to plasma etching to divide the wafer into individual device chips, and a whole resin film removing step of cleaning a frame unit to remove wholly the resin film.

Wafer processing method

A processing method of a workpiece in which the workpiece with a plate shape is processed by using a vacuum chamber is provided. In the processing method of a workpiece, a negative pressure is caused to act on a holding surface from a suction path, and suction holding of the workpiece is executed by a chuck table. Then, the gas pressure in the vacuum chamber is reduced to at least 50 Pa and at most 5000 Pa. Then, while the suction holding of the workpiece is executed, an inert gas in a plasma state is supplied to the workpiece, and voltages are applied to electrodes disposed in the chuck table to execute electrostatic adhesion of the workpiece by the chuck table. Then, a processing gas in a plasma state is supplied, and dry etching of the workpiece is executed.

Processing method of workpiece

There is provided a processing method of a wafer. The processing method includes a frame unit preparation step of fixing the wafer in an opening of an annular frame by an adhesion tape to prepare a frame unit and a frame unit holding step of attracting and holding the wafer of the frame unit by an chuck table in an etching chamber with the intermediary of the adhesion tape. The processing method includes also a shielding step of covering the annular frame and (or) an annular region of the adhesion tape by a cover member to shield the annular frame and (or) the annular region from an external space and a dry etching step of supplying a gas to the etching chamber and executing dry etching for the wafer after execution of the frame unit holding step and the shielding step.

Processing method of wafer

A linear encoder includes a scale disposed within a housing and a scanning unit that is displaceable in a measuring direction relative to the scale. The scanning unit includes a scanning head disposed inside of the housing opposite to the scale such that the scale is scannable by the scanning head, as well as a mount to which the scanning head is fastened, and a driving component, via which the mount is coupled to a mounting base disposed outside of the housing. A vibration damper suppresses vibrations transversely to the measuring direction. The vibration damper is disposed on the mount or on the scanning head, and includes a damping mass and an elastic element. The damping mass is fastened by the elastic element to an attachment surface of the mount or of the scanning head.

Linear encoder

A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.

Method of processing wafer

A plasma etching apparatus includes: a vacuum chamber; a rotatable electrostatic chuck table for holding a workpiece in the vacuum chamber; a nozzle for supplying a plasma etching gas to part of the workpiece held on the electrostatic chuck table; a nozzle oscillating unit for oscillating the nozzle in such a manner as to describe a horizontal arcuate locus between a region corresponding to the center of the electrostatic chuck table and a region corresponding to the outer periphery of the electrostatic chuck table; and a control unit that controls the rotation amount of the electrostatic chuck table and the position of the nozzle to thereby position the nozzle into a region corresponding to an arbitrary part of the workpiece held on the electrostatic chuck table.

Plasma etching apparatus comprising a nozzle oscillating unit

An analyzer includes an exchangeable and consumable element such as a sensor, column or reagent the characteristic of which specifies an analyzing condition. The element is provided with a non-volatile semiconductor memory which holds an analyzing condition adapted for the element as data. When the element is mounted on an analyzer body, a controller of the analyzer reads the analyzing condition from the memory to update an analyzing condition inherently provided in the analyzer body. The result of analysis and/or operational history information of use of the element may be written into the memory with which the element is provided.

Analyzer having sensor with memory device

The solid-state ion sensor of the present invention comprises an inner electrode comprising a metal and a water-insoluble salt of the metal which covers at least a part of the surface of the metal, an ion-selective membrane selectively responsive to the ion species to be determined, and an intermediate layer comprising a hydrophilic polymeric membrane provided between the inner electrode and the ion-selective membrane. The inner electrode comprises a metal and a halogenide of the metal which covers at least a part of the surface of the metal. In the hydrophilic polymeric membrane is dispersed a hydrophilic electrolyte having halogen ions same as or different from those constituting the halogenide with the weight ratio of the electrolyte and the polymer [(electrolyte) wt. %/(polymer) wt. %] being at least 1/100. A polymeric ion-conductor can be used as the hydrophilic polymeric membrane.

Solid-state ion sensor

An ion sensor having an ion selectivity, which comprises an internal electrode of metal/metal salt, composed of an electroconductive layer of at least one metal and a layer of an insoluble salt of the metal in contact with the electroconductive layer, an ion selective membrane whose supporting membrane is composed of a hydrophobic polymer, and an intermediate layer capable of keeping water molecules, provided between the internal solid electrode and the ion selective membrane, where the organic compound having a water-keeping property is polymethylene glycol, polyethylene glycol or polypropylene glycol, each having a molecular weight of 200 to 600, and the inorganic compound having a water-keeping property is calcium chloride, gold chloride, magnesium perchlorate, magnesium fluoride or vanadium chloride dioxide, is suitable for analysis of specific ion species in a biological fluid with practically prolonged maintenance of properties of electrode.

Ion sensor

Infrared radiation is incident on a total reflection plane of a prism and penetrates a liquid sample through a metal layer put between the total reflection plane and the liquid sample in close contact therewith whereby the infrared radiation is partially absorbed by the liquid sample. Alternatively, the liquid sample may be put between the total reflection plane and the metal layer in close contact therewith so that part of the light penetrates the sample from the prism through the total reflection plane to interact with the metal layer and then is caused to reenter into the prism whereby it is partly absorbed by the liquid sample. The metal layer is for enhancing the intensity of the electric field component of the infrared radiation. The incident angle of the infrared radiation on the total reflection plane is so set that the partially absorbed infrared radiation is total-reflected. The total-reflected infrared radiation is detected by a detector so as to obtain an absorption spectrum of the liquid sample by the infrared radiation.

Infrared spectrum measuring apparatus adapted for measuring the

An ion-selective electrode comprises an ion-sensing membrane, an internal electrode adhered to the ion-sensing membrane, and a lead connected to said internal electrode. The internal electrode used comprises a plurality of metallic wires arranged into a grating or a mesh. The wires comprises a metal core and a surface layer of a salt of the metal. The metal of the core is silver and the salt of the metal is a silver halide selected from the group consisting of silver bromide, silver chloride and silver iodide. At least a part of the internal electrode is buried inside the ion-sensing membrane. Various components, the ion-sensing membrane, the internal electrode, the lead, an external terminal, are disposed in a flow-through cell having a flow path formed therein, through which path a sample solution is passed, to constitute the ion-selective electrode. In the flow-through cell is disposed a means of maintaining the humidity to feed water vapor therefrom to the ion-sensing membrane. This structure, even when the ion-sensing membrane has a complicated configuration such as concave or convex surface, enables the establishment of good adhering conditions between the internal electrode and the ion-sensing membrane while retaining the complicated configuration of the ion-sensing membrane without reducing the effective contact areas of the ion-sensing membrane and the internal electrode.

Ion-selective electrode

A biochemistry analyzer includes, an attenuated total reflection prism, a sample cell disposed on a surface of the prism, a sample supplier, a device for disposing more objective molecules in the liquid sample to a near portion of the sample which is near the surface of the prism, an infrared light source for generating an infrared light which is transmitted to the attenuated total reflection prism, a detector for detecting the infrared light which is reflected from the prism after the far portion of the sample is solidified, and a computer for calculating signals from the detector. As the objective molecules are gathered near the prism, accuracy of the biochemistry analyzer becomes higher.

Biochemical analyzer and attenuated total reflection prism cell used in

A sensor for detecting a carbonic acid gas dissolved in body fluids has a laminated structure including an outer plate having a carbonic acid gas permeable window, a plate for a pH-electrode having a pH sensitive membrane, an intermediate plate having a cavity for accommodating an electrolyte, and a plate for a reference electrode. The plate for the pH-electrode is constituted in a manner that a pH sensitive membrane constituted by a membrane of an oxide of a platinum group metal is formed on an insulating substrate and the electrolyte contacts with the pH sensitive membrane in a groove. The pH sensitive membrane is disposed so as to oppose to the carbonic acid gas permeable window.

Carbonic acid gas sensor

A gas sensor e.g. an oxygen sensor for testing body fluids, has a laminated structure with a cavity for holding a gel or liquid electrolyte in contact with a cathode and anodes formed by deposition on layers of the structure. The cathode contacts the electrolyte cavity only at a small-volume reaction region defined e.g. in a groove which communicates with a larger, laminar volume of the cavity formed e.g. by a spacer layer having through apertures. A small gas-permeable window opposes the cathode at the reaction region. The laminar construction can be mass-produced. The enlarged electrolyte reservoir lengthens the sensor life.

Electrolytic sensor for measuring the content of gas in a fluid

Stable hemoglobin A.sub.lc (s-A.sub.lc) can be separated from other hemoglobin components and quantitated in a short time by means of a liquid-chromatographic apparatus comprising a separation column packed with a packing material consisting essentially of a porous substance having a carboxyalkyl group combined thereinto, as ion exchanger, a means for injecting a sample into the separation column, a means for passing one or more eluents through the separation column, and a means for detecting hemoglobin, hemoglobin derivatives or glycosylated hemoglobin, the average particle size of the packing material in dry state being 4 .mu.m or less.

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Hitachi, Japan

Yoshio Watanabe