Mitsubishi Chemical Corporation

Tohoku University

Yoshio Waseda

Kenji Shimoyama

Kazumasa Kiyomi

Hirobumi Nagaoka

Hiroyuki Shibata

Disclosed is a method of manufacturing a GaN-based material having high thermal conductivity. A gallium nitride-based material is grown by HVPE (Hydride Vapor Phase Epitaxial Growth) by supplying a carrier gas (G) containing Hgas, GaCl gas (G), and NHgas (G) to a reaction chamber (), and setting the growth temperature at 900 (&#xb0; C.) (inclusive) to 1,200 (&#xb0; C.) (inclusive), the growth pressure at 8.08&#xd7;10(Pa) (inclusive) to 1.21&#xd7;10(Pa) (inclusive), the partial pressure of the GaCl gas (G) at 1.0&#xd7;10(Pa) (inclusive) to 1.0&#xd7;10(Pa) (inclusive), and the partial pressure of the NHgas (G) at 9.1&#xd7;10(Pa) (inclusive) to 2.0&#xd7;10(Pa) (inclusive).

Growing community of inventors

Miyagi-ken, Japan

Yoshio Waseda