Growing community of inventors

Toride, Japan

Yoshio Tsuezuki

Average Co-Inventor Count = 6.00

ph-index = 4

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 47

Yoshio TsuezukiMasahiro Kanai (16 patents)Yoshio TsuezukiKeishi Saitoh (16 patents)Yoshio TsuezukiKyosuke Ogawa (16 patents)Yoshio TsuezukiTeruo Misumi (16 patents)Yoshio TsuezukiTetsuo Sueda (16 patents)Yoshio TsuezukiYoshio Tsuezuki (16 patents)Masahiro KanaiMasahiro Kanai (147 patents)Keishi SaitohKeishi Saitoh (90 patents)Kyosuke OgawaKyosuke Ogawa (63 patents)Teruo MisumiTeruo Misumi (53 patents)Tetsuo SuedaTetsuo Sueda (23 patents)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Canon Kabushiki Kaisha (16 from 90,934 patents)


16 patents:

1. 4720443 - Member having light receiving layer with nonparallel interfaces

2. 4705730 - Light-receiving member

3. 4705733 - Member having light receiving layer and substrate with overlapping

4. 4705734 - Member having substrate with irregular surface and light receiving layer

5. 4705732 - Member having substrate with projecting portions at surface and light

6. 4705731 - Member having substrate with protruding surface light receiving layer of

7. 4705735 - Member having substrate with protruding surface portions and light

8. 4701392 - Member having light receiving layer with nonparallel interfaces and

9. 4701393 - Member with light receiving layer of A-SI(GE) and A-SI and having

10. 4696881 - Member having light receiving layer with smoothly connected interfaces

11. 4696883 - Member having light receiving layer with smoothly connected non-parallel

12. 4696882 - Member having light receiving layer with smoothly interconnecting

13. 4696884 - Member having photosensitive layer with series of smoothly continuous

14. 4678733 - Member having light receiving layer of A-Si: Ge (C,N,O) A-Si/surface

15. 4675263 - Member having substrate and light-receiving layer of A-Si:Ge film and

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as of
1/23/2026
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