Other

Mitsubishi Heavy Industries Limited

Hitachi-kokusai Electric Inc.

Daikin Kogyo Co., Ltd.

Yoshio Tominaga

Noriyoshi Sato

Satoru Iizuka

Masanobu Sato

Unryu Ogawa

Shin Kato

Yukito Nakagawa

Shingo Yamasue

Yunlong Li

Tsukasa Yoneyama

Hiroyasu Sato

Yoichiro Numazawa

Mieko Iwai

Katsumi Nakanishi

Hirokazu Azuma

Ryota Chaki

A curvature adjustment method is applied to an arc-shaped stator vane segment having a plurality of stator blades disposed side by side on the outer peripheral side of an arc-shaped inner coupling member. In the curvature adjustment method, a jig preparation step, a jig mounting step, and a curvature adjustment step are executed. In the jig preparation step, a curvature adjustment jig and a distance adjustment mechanism are prepared. In the jig mounting step, with the distance adjustment mechanism placed on the inner peripheral side of the inner coupling member, a first end is fixed at a first position of the inner coupling member, and a second end is fixed at a second position of the inner coupling member. In the curvature adjustment step, the distance adjustment mechanism is operated after the jig mounting step to change the distance between the first and second ends of the curvature adjustment jig.

Curvature adjustment method for stator blade segment, method for manufacturing stationary body of axial-flow rotary machine, and curvature adjustment jig for stator blade segment

A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds the plasma generating zone, and a vacuum chamber of rectangular cross-section. Permanent magnets surround the discharge electrode, produce predetermined magnetic lines of force with portions which extend approximately parallel to the central axis of discharge electrode. A pair of parallel plate electrodes define the extension of the plasma generating zone in the direction of the central axis of the discharge electrode. The apparatus is configured such that the magnetic lines of force passing through the central portion of the plasma generating zone do not intersect with the electrodes.

Plasma generating apparatus and semiconductor manufacturing method

A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power. Due to this, processing of a large area substrate becomes possible.

Plasma processing system

A novel lipase characterized in that at least 95% of its original activity is maintained after being treated at a temperature of 30.degree. to 80.degree. C. for 15 minutes, which may be produced by cultivating Rhizopus chinensis FERM BP-936 in a culture medium and recovering the produced enzyme from the medium.

Heat-resistant lipase

Growing community of inventors

Tokyo, Japan

Yoshio Tominaga