Hitachi, Ltd.

Yoshio Taniguchi

Motoyasu Terao

Yasushi Tomioka

Shuji Imazeki

Masahiro Ojima

Shinkichi Horigome

Katsumi Kondo

Toshio Nakano

Akira Sasano

Kazuo Shigematsu

Naoki Tanaka

Seiji Yonezawa

Hideaki Kawakami

Yoshinori Miyamura

Ken Tsutsui

Michiaki Hashimoto

Tatsuo Kanetake

Akiya Izumi

Toshihiko Tanaka

Masakazu Aoki

Norio Hasegawa

Iwao Takemoto

Toshimitsu Kaku

Hiroshi Fukuda

Eiichi Maruyama

Masashi Kiguchi

Saburo Nonogaki

Yoshinori Imamura

Seiichi Kondo

Norio Koike

Toshiei Kurosaki

Haruo Matsumaru

Sachio Ishioka

Yasuharu Shimomoto

Hirokazu Matsubara

Masami Yamasaki

Munehisa Mitsuya

Tadao Kaneko

Keizo Kato

Toshiharu Matsuzawa

Sakae Ota

Jun-ichi Hirataka

Tadeo Kaneko

An organic thin film obtained by spreading an organic substance comprising a polymer on a liquid surface, and compressing the spread substance unidirectionally or in two directions facing each other, in which organic thin film the principal chain of said polymer in the surface of the film has been oriented perpendicularly to the direction of the compression, and a method for producing the same. A liquid crystal display device comprising substrates, a polarizer, electrodes at least one of which is transparent, if necessary semiconductor substrates at least one of which is transparent, an orientation-controlling film and a liquid crystal layer, among which at least one of the polarizer, electrode, semiconductor substrate, orientation-controlling film and liquid crystal layer comprises an organic thin film. The orientation-controlling film may be an organic thin film in which the film-forming molecules have been uniformly oriented in a particular direction in the surface of the film. The present invention provides an oriented organic thin film, a liquid crystal display device with the oriented organic thin film and a thin and flexible liquid crystal display device.

Liquid crystal display devices with organic thin film formed by

An optical modulating element has a core layer and first and second cladding layers sandwiching the core layer. The core layer is made of one or semiconductors belonging to a point group 43m or 42m, and has TM.sub.00 and TE.sub.00 propagation modes. The direction of light of said TM.sub.00 and TE.sub.00 propagation modes is parallel to the [110] or [-110] direction of crystal orientation. The change amount of an index of refraction of the core layer caused by the application of an electric field to the core layer in the direction parallel to the [001] direction is different for the two propagation modes.

Optical modulator depressing optical feedback and optical modulating

In an optical recording method which utilizes hole burning, a plurality of sorts of light absorption centers having different properties are caused to coexist or to exist in the form of layers, thereby to remove the problem that, although the multiplicity of recording is high, the spacial recording density is low, so the overall recording density is low. Accordingly, the present invention can provide an optical recording method of very high recording density.

Optical recording method

A method for producing a polarizer patterned with a plural number of portions having a polarizing ability or direction of polarization comprising the first step of producing a surface oriented in a pre-determined direction on a substrate, the second step of producing a polymerizable molecular layer which comprises polymerizable molecules on the above surface, the third step of polymerizing the molecules in said polymerizable molecular layer into a desired pattern and the fourth step of removing the unpolymerized portion of said polymerizable molecular layer. For example, the following procedure is repeated on one surface of a substrate to be given a polarizing ability: (1) An organic thin film uniformly oriented in a particular direction is produced by the Langmuir-Blodgett method, (2) a polymerizable molecular layer is produced on the above thin film, (3) the molecules in the polymerizable molecular layer is polymerized into a desired pattern and (4) the portion left unpolymerized of the polymerizable molecular layer is removed. By this treatment, a polarizer having as many orientation directions as the number of repetitions is obtained. The orientational order can also be given by rubbing in place of the Langmuir-Blodgett method.

Polarizer with patterned diacetylene layer, method for producing the

A liquid crystal display device includes a phase-plate disposed between a pair of substrates, preferably inside of the electrode, to increase the transmission rate and improve the contrast ratio of the display.

Liquid crystal display device with birefringent film between the

Disclosed is a wavelength multiplexing optical recording apparatus comprising laser sources radiating a plurality of laser beams of different wavelengths, an optical system for focusing the laser beams, and an optical recording medium having a plurality of optical recording layers with wavelength sensitivities for selective recording by said laser beams focused by said optical system. The optical recording layers of recording medium are laminated with distances between adjacent layers being made consistent with biased focal positions of the laser beams attributable to the chromatic aberration of the optical system, so that the laser beams are focused on the optical recording layers of corresponding wavelength sensitivities.

Wavelength multiplexing optical recording apparatus

An area on a photoresist film which is formed on a substrate surface having a topography, is exposed a plurality of times in such a manner that the image plane of a mask pattern is formed at a plurality of positions which are spaced apart from a reference plane in the substrate in the direction of an optical axis, and then the photoresist film is developed to form a resist pattern. According to the above method, the effective focal depth of the projection aligner used is enhanced, and moreover the reduction of the image contrast at the photoresist film is made very small by the plural exposure operations. Accordingly, a fine pattern can be formed accurately on the substrate surface having the topography.

Method of forming pattern and projection aligner for carrying out the

A desired portion of information stored in the form of holes using hole burning phenomena is erased by irradiating a desired portion of a recording medium with light so as to erase desired holes. In this way it is possible to erase selectively only desired information among information stored in a PHB memory and further to rewrite information in the portion, where information has been erased.

Method for erasing recording in a PHB memory

Disclosed is a method of producing color filters, which comprises forming a layer of an organic polymeric material having a predetermined light-sensitive characteristic on a substrate, exposing this layer to a predetermined pattern, developing the exposed layer to form a filter base and dyeing the filter base, wherein after the development of the exposed layer, the layer is wetted with a dehydrating solution to remove water from the filter base. By this dehydrating treatment, the filter base can be processed with very high precision.

Method of producing color filters using dehydrating solution

A recording medium in which a substrate, an inorganic material layer adapted to absorb light and generate heat, a first organic material layer made of an organic matter containing metal, and a second organic material layer adapted to be deformed or removed by heat are successively stacked. A metal salt of an organic acid, or organic metal compound etc. are employed for the first organic material layer. Owing to the presence of this layer, the recording medium exhibits a stability against changes in the ambient temperature.

Recording medium

According to a solid-state imager of this invention, in case where a plurality of color filters are disposed on a semiconductor body for the solid-state imager including a plurality of photosensitive regions and where the color filter of a third color is constructed by the overlapping between filter members of a first color and a second color, that one of the filter members which has a spectral transmittance substantially transmitting light for exposure for use in forming the filter members is arranged as a lower layer closer to a substrate of the semiconductor body. Even when the filter members are formed by the exposure process, a solid-state imager having good characteristics can be manufactured.

Solid-state color imager and method of manufacturing the same

In a solid-state imaging device wherein filters of the three primary colors in the mosaic filter configuration are stacked on a solid-state imager LSI in which a plurality of picture elements each consisting of a photoelectric conversion element and a scanning element are arrayed in the shape of a matrix; a method of producing a solid-state imaging device wherein the dimensions of filter layout patterns on exposure masks for the respective colors used in case of manufacturing the color filters of:

Method of producing solid-state color imaging devices

In an electrophotographic member employing an amorphous silicon photoconductive layer, a part which is at least 10 nm thick inwardly of the amorphous silicon layer from the surface (or interface) of the amorphous silicon layer is made of amorphous silicon which has an optical forbidden band gap of at least 1.6 eV and a resistivity of at least 10.sup.10 .OMEGA..cm. The electrophotographic member exhibits a satisfactory resolution and good dark-decay characteristics. Further, a region which has an optical forbidden band gap narrower than that of the amorphous silicon forming the surface (or interface) region is disposed within the amorphous silicon layer to a thickness of at least 10 nm, whereby the sensitivity of the electrophotographic member to longer wavelengths of light can be enhanced.

Electrophotographic member with .alpha.-Si layers

A recording medium having at least a first inorganic material layer which overlies a predetermined substrate and which exhibits a light absorptivity for projected light, and a recording layer which overlies the first inorganic material layer and whose principal component is an organic material. The first inorganic material layer contains at least one element selected from the group consisting of In, Bi, Te, Sb, Ge, Sn, Pb, Cr, Nb, Ni, Pd, Fe, Pt, Re, Ta, Th, Ti, Zr and Tl and the content of the element or elements is at least 65 atomic-%. Further, the first inorganic material layer may well be overlaid with a second inorganic material layer which exhibits a light transmissivity higher than that of this first inorganic material layer. Preferable as the material of the second inorganic material layer is an inorganic material which contains at least one element selected from the group consisting of In, Bi, Te, Sb, Pb, Ge and Sn and at least one element selected from the group consisting of S, Se and O. In proximity to at least one surface of the first inorganic material layer, at least one stabilizing layer may be disposed as well.

A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.

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Hino, Japan

Yoshio Taniguchi