Mitsubishi Denki Kabushiki Kaisha

Yoshio Takagi

Satoshi Mori

Hisashi Kawafuji

Tooru Iwagami

Sukehisa Noda

Gourab Majumdar

Kiyoshi Arai

Gorab Majumdar

Hiroshi Ando

Tatsuya Iwasa

Semiconductor device

A groove (21) is formed on an upper surface of sealing resin (2) in the form of a strip. A device (101) is pressed against a flat surface of a radiating fin (55) by a band plate shaped clamper (61) which is engaged with the groove (21). Due to the engagement of the clamper (61) and the groove (21), movement of the device (101) is limited. Namely, the device (101) is stably fixed to the radiating fin (55). Since the device (101) is fixed to the radiating fin (55) by the clamper (61), no hole for receiving a fastening screw is provided in the sealing resin (2). Therefore, the sealing resin (2) is reduced, whereby miniaturization of the device (101) is implemented. Thus, the device is miniaturized at no sacrifice of radiation efficiency.

Semiconductor device, semiconductor module, and radiating fin

In a device (101) formed as an invertor, terminals connected to floating source pins (VS) which are provided in control circuits (31 to 33) are limited to output terminals (U, V, W). In order to hold voltages across floating source pins (VD, VS), capacitive elements (51 to 53) which are provided around the device (101) are connected to the output terminals (U, V, W). Thus, the terminals which are connected with the floating source pins (VS) are shared by the output terminals (U, V, W), whereby the numbers of the terminals and wiring patterns are reduced. Thus, the device (101) is miniaturized.

Semiconductor device and semiconductor module

It is an object to facilitate assembly of an application device. A device (101) is provided with a heat sink (51) to radiate loss heat of an IGBT element (11) as a power semiconductor element to an external radiation fin. External terminals (5 and 6) connected to an external circuit substrate protrude in the direction in which the exposed surface of the heat sink (51) is directed. Accordingly, when assembling an application device by mounting the device (101) on the external circuit substrate together with other circuit elements, it is possible to mount the device (101) and other circuit elements together on the common main surface of the circuit substrate, i.e., on its main surface on the side opposite to the side where the radiation fin is attached. Accordingly, it is possible to collectively apply solder on the common main surface of the circuit substrate and collectively solder the device (101) and the other circuit elements.

It is an object of the present invention to obtain a power semiconductor device with small size and high reliability in power semiconductor devices having integral structure of case and external connection terminals. A dummy pad (42) having no electric connection with other parts is provided and a terminal end of a connecting wire (46) connecting by sequentially bonding an exposed surface of a connection electrode (43) and a bonding pad (41) of a semiconductor element (40) is bonded thereto. The semiconductor device can be miniaturized without deteriorating electric characteristics and reliability of the semiconductor elements.

Semiconductor device having integral structure of case and external

It is an object to downsize a device while maintaining a high breakdown voltage. An external terminal (7) protrudes to the outside from the side wall of a sealing resin (2) and a heat sink (1) is exposed in the bottom of the sealing resin (2). A step surface (21) retracted from the exposed surface of the heat sink (1) is formed in the part of the sealing resin (2) surrounding the periphery of the heat sink (1). When using this semiconductor device, the exposed surface of the heat sink (1) is brought into surface contact with the flat surface (41a) of the radiation fin (41) and an insulation sheet (31) is interposed between the step surface (21) and the flat surface (41a), and which is pressed therebetween. The insulation sheet (31) is disposed to cover the region facing the external terminal (7) in the flat surface (41a). Accordingly, it is possible to set the height of the external terminal (7) from the exposed surface of the heat sink (1) lower than the spatial distance determined on the basis of the rated voltage while keeping the breakdown voltage between the external terminal (7) and the radiation fin (41) as the rated voltage.

A first composite substrate including an insulating substrate, a copper pattern, and a copper layer on opposite surfaces is mounted on a metal base plate. A second composite substrate and semiconductor chips are mounted on the first composite substrate and interconnected by wire bonding. The paths of current flowing in the wires and in a copper pattern of the second composite substrate are antiparallel to the paths of current flowing in respective corresponding portions of the first composite substrate. A semiconductor device is produced in which an increasing switching frequency does not increase a surge voltage generated in ON and OFF switching operations.

Semiconductor device having low floating inductance

A semiconductor apparatus having a plurality of electrodes comprises two external terminals provided for each electrode for being coupled to an input signal.

Semiconductor apparatus

A semiconductor device which is designed to have a plurality of electrodes on an upper surface of a lid portion has a recessed portion which is provided on this upper surface of the lid portion. The recessed portion will accept an electrode after it is bent from its initial position to a position such that the electrode will partially reside in this recessed portion.

A semiconductor device includes a plurality of transistors formed on a common substrate and connected in a Darlington configuration. A conductor is connected between a metallization layer on the base region of a transistor of the last stage in the Darlington connections and a metallization layer on the emitter region on a transistor of the stage preceding the last stage in the Darlington connections.

Growing community of inventors

Tokyo, Japan

Yoshio Takagi