Trw Limited

Northrop Grumman Systems Corporation

Yoshio Saito

Mark Kintis

Dean Tran

James C Lau

Steven S Chan

Richard P Malmgren

Jerry T Fang

Wayne W Lam

Phu H Tran

Yiu C Ngan

Chih Chang

An integrated getter structure and a method for its formation and installation in a circuit module enclosure (). The integrated structure includes a hydrogen getter structure () and selected quantities of a material () that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material () is placed in discrete quantities over the hydrogen getter structure (). In another embodiment, the hydrogen getter structure () is formed over a sheet of the material () and is provided with apertures () to expose the material ().

Integrated multi-purpose getter for radio-frequency (RF) circuit modules

A single substrate hydrogen and microwave absorber () attenuates spurious microwave signals in a metal Integrated Microwave Assembly () and reduces hydrogen poisoning of hydrogen sensitive components implemented in the Integrated Microwave Assembly ('). The single substrate hydrogen and microwave absorber () includes a titanium substrate () with channels () spaced apart from one another by a predetermined distance. A layer of microwave absorbing material () is formed on portions () of the titanium substrate () between the channels (), and a layer of hydrogen getting material () is formed in the channels () of the titanium substrate ().

Single substrate hydrogen and microwave absorber for integrated microwave assembly and method of manufacturing same

Disclosed are a packaging component for packaging a microelectronic (e.g., III-V semiconductor) device, the packaged microelectronic device, and methods for manufacture thereof. The component has sequentially deposited layers of metal ( ), to be located within the package, to act as a hydrogen getter. The sequentially deposited layers of metal include at least a first layer ( ) of Ni adjacent the housing member surface, to improve adherence of the sequentially deposited layers and interstitially trap hydrogen; an outermost layer ( ) of palladium to convert molecular hydrogen to hydrogen atoms and to absorb hydrogen; and a layer ( ) of Ti or Zr adjacent this outermost layer. Additional layers ( ) of nickel and of titanium or zirconium can be provided between the first layer and the layer adjacent the outermost layer. Desirably, the surface of the housing member is roughened prior to depositing the first layer thereon.

Hydrogen getter for integrated microelectronic assembly

Disclosed are a packaging component for packaging a microelectronic (e.g., III-V semiconductor) device, the packaged microelectronic device formed using such component, and method for forming the package component and packaged microelectronic device. The component (which can be, e.g., a lid or container 21 of the package) has sequentially deposited layers of metal layers (37, 50), to be located within the package, attached to a housing member, to act as a hydrogen getter in the package. The sequentially deposited layers of metal layers includes at least a first layer (3) of Ni adjacent the housing member surface, to improve adherence of the sequentially deposited layers and interstitially trap hydrogen; an outermost layer (11) of palladium to convert molecular hydrogen to hydrogen atoms and as the primary absorber of the hydrogen; and a layer (9) of Ti or Zr adjacent this outermost layer and acting as a secondary absorber of the hydrogen. Additional layers (5, 7) of nickel and of titanium or zirconium can be provided between the first layer and the layer adjacent the outermost layer. These layers of the sequentially deposited layers of metal layers can be deposited by, e.g., vacuum evaporation or sputtering. Desirably, where sequentially deposited layers is provided directly on the housing member, the surface of the housing member is roughened prior to depositing the first layer thereon, in order to improve hydrogen absorption efficiency of the sequentially deposited layers of metal layers.

An electrical testing device is provided for testing integrated circuits located on a wafer. The testing device employs a multi-layer test circuit having a plurality of contacts for contacting the integrated circuits on a wafer. The layers of the test circuit are embedded in a flexible, supportive dielectric material which allows vertical flexing of the contacts. Cross bar switches are further employed to switch among the plurality of contacts thereby enabling the testing of individual dies of the water to be tested. A microprocessor is further included for controlling the switching and the testing of each die. In an alternate embodiment, the plurality of contacts are mechanically moved relative to the wafer to allow testing of the dies without the need for the switches.

On-wafer integrated circuit electrical testing

A 'packageless' diode chip is integrated into a microstrip patch antenna. Application of DC current to the device results in efficient radiation of high powered microwave frequency signals directly into free space.

Growing community of inventors

Westchester, CA, United States of America

Yoshio Saito