Kabushiki Kaisha Toshiba

Fuji Photo Film Company, Limited

Toshiba Memory Corporation

Fujitsu Corporation

Kioxia Corporation

Winbond Electronics Corporation

Copal Company Limited

Kabushiki Kaisha Tohisba

Yoshio Ozawa

Katsuyuki Sekine

Masayuki Tanaka

Akihito Yamamoto

Ryota Fujitsuka

Katsuaki Natori

Seiji Inumiya

Ichiro Mizushima

Fumitaka Arai

Yoshitaka Tsunashima

Isao Kamioka

Daisuke Nishida

Riichiro Shirota

Shigehiko Saida

Hirokazu Ishida

Tetsuya Kai

Toshitake Yaegashi

Takashi Yoshida

Masahiro Kiyotoshi

Yasumasa Suizu

Kensuke Takano

Takashi Suzuki

Junichi Wada

Kiyotaka Miyano

Fumiki Aiso

Masaaki Higuchi

Junichi Shiozawa

Yoshihiko Saito

Takashi Matsumoto

Katsuhiko Hieda

Takashi Nakao

Takao Shigaki

Yuji Takeuchi

Tetsuo Matsuda

Masayuki Ichige

Masanobu Saito

Kikuo Yamabe

Yuuichiro Mitani

Masaru Kito

Hiroshi Tomita

Yoshihiro Ogawa

Mitsuru Sato

Mitsuhiro Noguchi

Hiroshi Iwai

Kenji Suzuki

Atsuhiro Sato

Daisuke Matsushita

Yuichiro Mitani

Akira Goda

Kouji Matsuo

Takayuki Iida

Hiroshi Akahori

Hiroki Yamashita

Hisayo S Momose

Ryuji Ohba

Hideo Ishizaka

Toyota Morimoto

Noritake Oomachi

Wakako Takeuchi

Tomotaka Ariga

Mamoru Takahashi

Mitsuhiko Serizawa

Yoshiaki Fukuzumi

Hideaki Aochi

Hiroyasu Tanaka

Ryota Katsumata

Masaru Kidoh

Kazuhiko Yamamoto

Atsuko Sakata

Koji Yamakawa

Kazuaki Nakajima

Makoto Mizukami

Hajime Nagano

Hiroaki Hazama

Kazuhiro Matsuo

Kei Watanabe

Hiroaki Yamada

Katsuya Okumura

Yasushi Nakasaki

Hiroaki Tsunoda

Yasuyuki Matsuoka

Shinichi Nakao

Hiroyuki Fukumizu

Futoshi Yoshida

Yasuhiro Nojiri

Hisataka Meguro

Takuya Konno

Yuji Fukazawa

Atsuko Kawasaki

Junichi Tsuji

Kazuhiko Hashimoto

Toshiyuki Inoue

Minako Inukai

Kaori Umezawa

Kazuo Saki

Mitsukazu Hosoya

Kaoru Hama

Ichiro Yoshii

Hiroshi Matsuba

Akiko Sekihara

A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode.

Semiconductor memory and method of manufacturing the same

A non-volatile semiconductor memory device according to an embodiment includes a plurality of first wiring lines that extend in a first direction, a plurality of second wiring lines that extend in a second direction intersecting the first direction to cross the first wiring lines, and memory cells, each of which is provided at a portion where the first wiring line crosses the second wiring line. The memory cell includes a variable resistance layer in the space between the wiring lines where the first wiring line crosses the second wiring line, a seam in the variable resistance layer extending in a direction between the first wiring layer and the second wiring layer, and a metal supply layer that comes in contact with the variable resistance layer and the seam.

Non-volatile semiconductor memory device

According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.

Nonvolatile semiconductor memory device including a charge storage layer formed on first and second insulating layers

A nonvolatile memory device includes: a first conductive layer; a second conductive layer; a first resistance change layer provided between the first conductive layer and the second conductive layer and having an electrical resistance changing with at least one of an applied electric field and a passed current; and a first lateral layer provided on a lateral surface of the first resistance change layer and having an oxygen concentration higher than an oxygen concentration in the first resistance change layer.

Nonvolatile memory device

According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al).

Ferroelectric memory and manufacturing method of the same

According to one embodiment, a semiconductor memory device with memory cells each composed of a vertical transistor, comprises a silicon layer formed into a columnar shape on a silicon substrate, a gate insulating film part in which a tunnel insulating film, a charge storage layer, and a block insulating film are formed to surround the sidewall surface of the silicon layer, and a stacked structure part formed to surround the sidewall surface of the gate insulating film part and in which a plurality of interlayer insulating films and a plurality of control gate electrode layers are stacked alternately. The silicon layer, gate insulating film part, and control gate electrode layer constitute the vertical transistor. The charge storage layer has a region lower in trap level than a region facing the control gate electrode layer between the vertical transistors.

Semiconductor memory device and method of manufacturing the same

On a silicon substrate is formed a stacked body by alternately stacking a plurality of silicon oxide films and silicon films, a trench is formed in the stacked body, an alumina film, a silicon nitride film and a silicon oxide film are formed in this order on an inner surface of the trench, and a channel silicon crystalline film is formed on the silicon oxide film. Next, a silicon oxide layer is formed at an interface between the silicon oxide film and the channel silicon crystalline film by performing thermal treatment in an oxygen gas atmosphere.

Nonvolatile semiconductor memory device and method for manufacturing the same

According to one embodiment, a memory element includes: a first electrode layer; a second electrode layer; and a memory layer provided between the first electrode layer and the second electrode layer, and the memory layer including a plurality of first oxide layers in a second oxide layer, a resistivity of each of the plurality of first oxide layers being higher than a resistivity of the second oxide layer.

Resistance change memory element and resistance change memory

A resistance change element includes a first conductive layer, a second conductive layer, and a memory layer. The memory layer is provided between the first conductive layer and the second conductive layer. The memory layer is capable of reversibly transitioning between a first state and a second state due to at least one of a voltage and a current supplied via the first conductive layer and the second conductive layer. A resistance of the second state is higher than a resistance of the first state. The memory layer includes niobium oxide. One of a (100) plane, a (010) plane, and a (110) plane of the memory layer is oriented in a stacking direction from the first conductive layer toward the second conductive layer.

Resistance change element and nonvolatile memory device

Nonvolatile memory with resistance change layer

Growing community of inventors

Yokohama, Japan

Yoshio Ozawa