Fujikoshi Machinery Corp.

Shinshu University

National Institute of Advanced Industrial Science and Technology

Novel Crystal Technology, Inc.

Fujikoshi Kikai Kogyo Kabushiki Kaisha

Yoshio Otsuka

Yoshio Nakamura

Takumi Kobayashi

Keigo Hoshikawa

Toshinori Taishi

Shiro Hara

Sommawan Khumpuang

Kazutaka Shibuya

Shinichi Ikeda

Yasuhide Denda

Atsushi Kajikura

Etsuko Ohba

Takayuki Fuse

Satoru Kitta

Toshiaki Seki

Takuya Kakegawa

Takashi Okubo

Kiyokazu Gonda

A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500&#xb0; C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Production apparatus for gallium oxide crystal capable of preventing harmful substances formed in furnace from being diffused to surroundings of furnace

A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

Crucible for growing metal oxide single crystal

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900&#xb0; C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Gallium oxide crystal manufacturing device

The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Wafer polishing apparatus

A method for adjusting temperature of a machining liquid, e.g., slurry, etching liquid, by passing the machining liquid through a heat exchanger. The heat exchanger, which adjusts the temperature of the machining liquid, includes a ceramic heat exchanging tube which is made by baking silicon carbide (SiC).

Heat exchanger

The disk edge polishing machine is capable of polishing an inner edge of a center hole of a disk and an outer edge thereof. In the disk edge polishing machine, a sucking member has a cylindrical end section. The sucking member sucks the disk by the cylindrical end section and exposes the inner edge and the outer edge of the disk. The sucking member spins together with the disk. An outer polishing member polishes the outer edge of the disk. An inner polishing member is inserted into the center hole and simultaneously polishes the inner edge of the disk. A first driving mechanism relatively moves the outer polishing member and the sucking member close to and away from the outer edge of the disk along a predetermined course. A second driving mechanism relatively moves the inner polishing member and the sucking member close to and away from the inner edge of the disk along another predetermined course extended from the predetermined course.

Disk edge polishing machine and disk edge polishing system

Growing community of inventors

Nagano, Japan

Yoshio Otsuka