Shinko Electric Industries Co., Ltd.

Yoshio Onuma

Katsuyoshi Hamasaki

Sumihiro Ichikawa

Kenji Takeuchi

An indium layer and a copper layer, and whenever necessary, a gallium layer or a gallium-alloy layer, are laminated on an electrode film formed on one of the surfaces of a substrate to form a metallic film. The metallic film is then subjected to sulfurization treatment or selenization treatment to form a p-type semiconductor layer made of &ldquo;CuInS,or CuInSe,&rdquo; or &ldquo;Cu(In, Ga)S,or Cu(In, Ga)Se,&rdquo;. This p-type semiconductor layer is subjected to KCN treatment, for removing impurities such as copper sulfide, copper selenide, etc., by a KCN solution, and an n-type semiconductor layer is formed on this p-type semiconductor layer to form a solar cell. In this instance, the indium layer is formed under heating, or is heat-treated by heat-treatment while the surface of the indium layer is exposed.

Compound semiconductor solar cell and production method thereof

A method of fabricating a superconducting quantum interference device (DC-SQUID) constructed from short weak links with untrafine wires. The method comprises the following steps: successive forming a niobium nitride film and a silicon nitride film on a substrate; oblique etching of the niobium nitride film and said silicon nitride film with respect to the substrate by a reactive ion etching process using a mixture of oxygen and CF.sub.4 gases to form an olique edge; and successive forming a barrier thin film and a counterelectrode of niobium on the said edge. The short weak links wire fabricated by field evaporation technique. The counterelectrode material were field-evaporated and formed the conductive paths in the pinholes in the insulating thin film.

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Nagano, Japan

Yoshio Onuma