Sumitomo Mitsubishi Silicon Corporation

Sumco Corporation

Oki Electric Industry Co., Ltd.

Mitsubishi Materials Silicon Corporation

Yoshio Murakami

Yoshiro Aoki

Takashi Shibayama

Takayuki Shingyoji

Toru Yamazaki

Akihiko Endo

Bong-Gyun Ko

Riyuusuke Kasamatsu

Masatoshi Kawaji

Toshihiro Ikeda

A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 10-10/cmbefore or after the step of the oxygen ion implantation.

Method of producing SIMOX wafer

A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or Natmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.

A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the furnace maintained at a temperature of 250&#xb0; C. to 800&#xb0; C. to transfer the SOI wafer to an atmosphere containing hydrogen or water. The steps are performed in that order.

Method for manufacturing silicon-on-insulator wafer

A thermal processing operation is performed for a silicon wafer W (silicon single-crystal layer) in an atmosphere gas which is formed by a hydrogen gas or an inert gas or a mixture gas of these gases at a temperature in a range of 600&#xb0; C. to 950&#xb0; C. (here, the temperature should not be greater than 950&#xb0; C.). By doing this, a quality of a surface of the silicon single-crystal layer is improved.

Process for producing silicon single crystal layer and silicon single crystal layer

This silicon wafer production process has a step of cutting a silicon wafer from a silicon single crystal ingot in a perfect region which includes a perfect region P free of agglomerates of interstitial-silicon-type point defects and agglomerates of vacancy-type point defects and/or a region R in which there is occurrence of ring-shaped oxidation induced stacking faults, and a step of performing rapid thermal annealing on the silicon wafer in a hydrogen atmosphere, an argon atmosphere or an atmosphere containing a mixed gas thereof.

Silicon wafer production process and silicon wafer

The present invention provides a silicon wafer free of vacancy agglomerates and interstitial agglomerate; wherein the silicon wafer has a defect density of an oxide film of 0.1 piece/cm or less, when the oxide film having a thickness of 5 to 25 nm is formed on the surface of the wafer and a DC voltage of 10 MV/cm is applied via the oxide film for 100 seconds, and wherein the silicon wafer has an in-plane dispersion of 20% or less of a p-n junction leakage current in a p-n junction area of 1 mm or more of a p-n junction portion when the p-n junction portion is formed on the surface of the wafer. The present silicon wafer is capable of achieving a higher performance, higher yield and uniformity of characteristics of semiconductor devices comparable to a wafer provided with a pure epitaxial layer, without deteriorating the gettering ability of the silicon wafer.

Silicon wafer

A ticket processing apparatus for reusable tickets, having a thermal print portion capable of repeatedly printing by heating at a predetermined write temperature and deleting the printed characters and the like by heating at a deletion temperature, and also capable of setting information about the number of printing times, wherein a control unit 23 causes a magnetic read head 10 to read reservation information and information about the number of printing done from a magnetic recording stripe 1b of a reservation airline ticket 1, and also causes a thermal head 8 to heat a thermal print portion 1a of the reservation airline ticket 1 at a deletion temperature to delete printed reservation information of the thermal print portion 1a, and when the number of times printing done of the reservation airline ticket 1 is less than a preset value, causes the thermal head 8 to print real-ticket information on the thermal print portion 1a and also causes information about the number of printing done added with '1' to be written on the magnetic stripe 1b, and if the reservation airline ticket 1 is not reusable, causes a stored boarding ticket 15 to be paid out from a ticket storage 3, and causes real-ticket information to be printed on the thermal print portion 1a and causes real-ticket information and information about the number of times of printing done added with '1' to be printed on the magnetic stripe 1b of the ticket 1.

Growing community of inventors

Tokyo, Japan

Yoshio Murakami