Fujitsu Semiconductor Limited

Yoshio Matsuzawa

Tetsuya Takeuchi

Tomiyasu Saito

Tatsuya Mise

A semiconductor device includes a first electrode layer and a second electrode layer disposed over a substrate, a first insulating layer disposed over the first electrode layer, and a reflective electrode layer disposed on the first insulating layer and electrically connected to the first electrode layer, wherein the second electrode layer is exposed externally, and a thickness of the second electrode layer is greater than a thickness of the reflective electrode layer.

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Aizuwakamatsu, Japan

Yoshio Matsuzawa