Nissin Electric Co., Ltd.

Yoshio Matsubara

Masakuni Asano

Noriaki Tokuda

Yasunori Ando

Junzo Ishikawa

Shuichi Nogawa

Masayuki Tsuji

Hideaki Takara

Toshiaki Sasai

Takanori Tsunoda

Jun Nishidai

An inductively-coupled-plasma (ICP) type plasma processing apparatus is provided. The plasma processing includes an antenna which is substantially straight in a plan view of the antenna. A plasma is generated for performing a plasma treatment to a substrate when a high frequency current is applied to the antenna to form an electric field in a vacuum container. The antenna includes two go-and-return conductors closely disposed to each other in an up-down direction, wherein the up-down direction is perpendicular to a surface of the substrate, and the high frequency current is applied to flow in opposite directions between the two go-and-return conductors. An interval is defined by a distance between the two go-and-return conductors in the up-down direction, varies in a longitudinal direction of the antenna.

Plasma processing apparatus

In a current-limiting device, a plurality of current-limiting elements are connected in series to one another, and are inserted between the system power source of an electric power system and the load thereof. In the device, transformers, the number of which is equal to that of the current-limiting element S through Sn, are arranged. The primary windings of the transformers are connected to the current-limiting elements in the same polarity, respectively, and all the secondary wings thereof are connected in parallel to one another.

Current-limiting device

A system interconnection device connected between two systems, such as a commercial bus line carrying power from a commercial power line and a private bus line carrying power from a private power generator, is able to connect and disconnect the two systems, and, in the event of a fault, has a current-limiting effect, thus preventing instantaneous voltage drop of the respective bus lines. In the system interconnection device, unit parallel circuits made up of diodes and DC reactors are serially connected so that the diodes thereof have opposite directions. With this structure, in realizing operations equivalent to those of a conventional system interconnection device having a DC reactor between DC terminals of a single-phase rectifying bridge circuit, the number of diodes, which are rectifying elements, can be halved. This not only enables reduction of the total cost of elements, but also, particularly in high-voltage and extra-high-voltage systems, enables great reduction of the cost and space devoted to insulation.

System interconnection device and method of designing same

An ion source having an auxiliary plasma chamber and a main plasma chamber. The auxiliary plasma chamber receives an ionizable gas and is provided with microwaves with sufficient power to create a high frequency discharge and generate a subplasma for sustaining the creation of an ion plasma in the main chamber. Multiple auxiliary plasma chambers may be used and each may be separately regulated. Protective plates, screens, and coatings may be provided to protect the ion plasma of the main chamber from sputtering a facing wall of the auxiliary plasma chamber.

Ion source having auxillary ion chamber

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Kyoto, Japan

Yoshio Matsubara