Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Yoshio Kawashima

Takumi Mikawa

Takeshi Takagi

Yukio Hayakawa

Atsushi Himeno

Takeki Ninomiya

Akihiro Odagawa

Nozomu Matsukawa

Yasunari Sugita

Zhiqiang Wei

Hideaki Murase

Akira Inoue

Koji Arita

Mitsuo Satomi

Ryoko Miyanaga

Haruyuki Sorada

Masayoshi Hiramoto

Akira Asai

Yasunori Morinaga

Satoru Ito

Koji Katayama

Satoru Mitani

Shinichi Imai

Yuuko Tomekawa

Takeshi Harada

Takahiro Koyanagi

Shinichi Yoneda

Kenji Tominaga

Ichirou Takahashi

Mikawa Takumi

A capacitor includes a first electrode; a second electrode facing the first electrode; and a dielectric layer which is disposed between the first electrode and the second electrode and which is in contact with the first electrode. The first electrode includes a first portion including an interface between the first electrode and the dielectric layer, the dielectric layer includes a second portion including the interface, and the first portion and the second portion each contain silicon. A concentration distribution of the silicon along a thickness direction of the first portion and the second portion includes a convex portion intersecting the interface.

Capacitor including electrode and dielectric layer each containing silicon, and method for manufacturing capacitor

A nonvolatile memory device includes an insulating layer, oxygen diffusion prevention layers disposed on the insulating layer, a plurality of contact plugs, each of the plurality of the contact plugs penetrating through each of the plurality of the oxygen diffusion prevention layers and at least a part of the insulating layer, and a plurality of resistance-variable elements, each of the plurality of the resistance-variable elements covering each of the plurality of the contact plugs exposed on surfaces of the oxygen diffusion prevention layers and being electrically connected to each of the plurality of the contact plugs Each of the oxygen diffusion prevention layers is provided only between the insulating layer and each of the plurality of the resistance-variable elements to correspond to each of the plurality of the contact plugs arranged for each of the plurality of the resistance-variable elements.

Nonvolatile memory device and method for manufacturing the same

A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer, a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer, a lower electrode provided on both the contact plug and the contact layer that is provided on the part of the upper surface of the first interlayer insulating layer, and a resistance change layer provided on the lower electrode, and an upper electrode that is provided on the resistance change layer.

Resistive nonvolatile storage device, manufacturing method for same, and resistive nonvolatile storage apparatus

A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MO(where M is a transition metal and O is oxygen), the second transition metal oxide layer having a composition expressed as MO(where x&#x3e;y), and the third transition metal oxide layer having a composition expressed as MO(where y&#x3e;z).

Nonvolatile storage element and method for manufacturing same

A method of manufacturing a semiconductor device according to the present invention includes: forming a lower electrode above a substrate; forming, above the lower electrode, a first variable resistance layer comprising a first metal oxide; forming a step region in the first variable resistance layer by collision of ions excited by plasma; removing residue of the first variable resistance layer created in the forming of the step region; forming a second variable resistance layer which covers the step region of the first variable resistance layer, comprises a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, and has a bend on a step formed along an edge of the step region; and forming an upper electrode above the second variable resistance layer.

Method of manufacturing semiconductor memory device

A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first variable resistance layer. When viewed in a direction perpendicular to the major surface of the second variable resistance layer, an outline of the second variable resistance layer is located inwardly of the outline of any one of the second electrode layer and the first variable resistance layer, and an outline of a face of the second variable resistance layer, the face being in contact with the first variable resistance layer is located inwardly of an outline of a face of the first variable resistance layer, the face being in contact with the second variable resistance layer.

Variable resistance nonvolatile memory element and method of manufacturing the same

A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer.

Method of manufacturing a nonvolatile memory device having a variable resistance element whose resistance value changes reversibly upon application of an electric pulse

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side.

Non-volatile memory device and manufacturing method thereof

A method of manufacturing a non-volatile memory device comprises: forming a first electrode layer; a variable resistance material layer, a second electrode layer; and a hard mask layer, forming a first resist mask extending in a first direction on the hard mask layer; forming a first hard mask extending in the first direction by etching the hard mask layer using the first resist mask; forming a second resist mask extending in a second direction, on the first hard mask such that the width of the second resist mask is greater than the width of the first resist mask; forming a second hard mask by etching the first hard mask using the second resist mask; and forming a variable resistance element by patterning, by etching the second electrode layer, the variable resistance material layer and the first electrode layer using the second hard mask.

Manufacturing method of nonvolatile memory device and nonvolatile memory device

A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a variable resistance element and a first current steering element; and a current steering element parameter generation circuit. The current steering element parameter generation circuit includes: a third line placed between a substrate and a second interlayer dielectric; a fourth line placed above the second interlayer dielectric; and a second current steering element which is connected between the third line and the fourth line without the variable resistance element being interposed therebetween when the variable resistance element is removed between the third line and the fourth line and has the same non-linear current steering characteristics as the first current steering element.

Non-volatile memory device and method for manufacturing the same

A nonvolatile memory device includes a plurality of nonvolatile memory elements each having an upper electrode, a variable resistance layer, and a lower electrode; a first insulating layer embedding the plurality of nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer being formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes included in the nonvolatile memory elements.

Nonvolatile memory device and method of manufacturing the same

A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxygen-deficient transition metal oxide, the second electrode has a single needle-shaped part at an interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the single needle-shaped part.

Variable resistance element and method of manufacturing the same

A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a first variable resistance element and a first current steering element and a parameter generation circuit including a reference cell including a second variable resistance element and a second current steering element having the same current density-voltage characteristic as that of the first current steering element, wherein a conductive shorting layer for causing short-circuiting between the electrodes is formed on the side surfaces of the second variable resistance element.

Non-volatile memory device

A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer connected to the second electrode; the non-volatile memory device including a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer; wherein the side wall protective layer extends across the second electrode to a position which is above an upper end of the second electrode and below an upper end of the connection layer such that an upper end of the side wall protective layer is located above the upper end of the second electrode and below the upper end of the connection layer, when viewed from a side.

A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask. In the etching, at least the variable resistance layer is etched using an etching gas containing bromine.

Growing community of inventors

Osaka, Japan

Yoshio Kawashima