Riken Corporation

National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Agency

Kawasaki Steel Corporation

Japan Science of Technology Agency

Yoshio Kaneko

Yoshinori Tokura

Masashi Kawasaki

Naoto Nagaosa

Junichi Iwasaki

Wataru Koshibae

Hiroyuki Yamada

Munetaka Koda

Yasujiro Taguchi

Masao Nakamura

Yoshihiro Ogawa

Yoshikatsu Shida

Takehiro Murakami

Naoki Kubota

Hiroshi Sato

Hiroshi Akoh

Jobu Matsuno

Osamu Kinoshita

Junichi Kawaguchi

Jun-ichi Kawaguchi

Tetushi Shimizu

Takahiro Morimoto

Tadayoshi Shiraishi

Shigeki Miyasaka

Yuji Ishii

Yoshiaki Shimada

Xiuzhen Yu

Yusuke Tokunaga

H Nat Inst Of Adv Ind Sce & Techn Yamada

Y Nat Inst Of Adv Ind Sce & Techn Tokura

M Nat Inst Of Adv Ind Sce & Techn Kawasaki

A photoelectric conversion device includes a photoelectric conversion element formed of a polar material and including no p-n junction, and first and second electrodes provided on the photoelectric conversion element and arranged at an interval. Space-inversion symmetry of a structure of the photoelectric conversion element is broken. The first and second electrodes are each formed of a metal material that generates no substantial potential barrier preventing majority carriers for the photoelectric conversion element from moving from the electrode to the photoelectric conversion element. Light incidence on the photoelectric conversion element without voltage application between the first and second electrodes causes electromotive force to be generated between first and second electrodes, and enables electric current to be continuously taken out from the first and second electrodes.

Photoelectric conversion device, photosensor, power generation device, and photoelectric conversion method

To provide a high-speed, large-scale non-volatile skyrmion random access memory that prevents incorrect writing and incorrect erasure, has a circuit with good storage-data sensitivity, generates smaller leakage current, and consumes less power. To provide a magnetic element for generating and erasing a skyrmion including: a first magnetic material thin film in which the skyrmion is generated and erased; a sensing element for sensing the skyrmion; and at least one of a first transistor for selecting the first magnetic material thin film, and a second transistor for selecting the skyrmion sensing element.

Magnetic element, skyrmion memory, skyrmion memory-mounted central processing LSI, data recording apparatus, data processing apparatus, and data communication apparatus

Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non-magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.

Magnetic element, skyrmion memory, solid-state electronic device, data-storage device, data processing and communication device

A magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being width of the magnet and hm being height of the magnet, a size of the magnet, with the skyrmion of a diameter &#x3bb; being generated, is such that 2&#x3bb;&#x3e;Wm&#x3e;&#x3bb;/2 and 2&#x3bb;&#x3e;hm&#x3e;&#x3bb;/2. With W being width of the end region in a direction parallel to the end portion of the magnet and h being height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that &#x3bb;&#x2265;W&#x3e;&#x3bb;/4 and 2&#x3bb;&#x3e;h&#x3e;&#x3bb;/2.

Magnetic element, skyrmion memory, skyrmion memory-device, solid-state electronic device, data-storage device, data processing and communication device

To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a &#x3b2;-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an AuAl type crystal structure.

Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3&#xb7;&#x3bb;&#x3e;Wm&#x2265;&#x3bb;, where &#x3bb; denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2&#xb7;&#x3bb;&#x3e;Hm&#x2265;&#x3bb;, and the magnet has a notch structure at the edge between the upstream electrode and the downstream electrode.

Magnetic element, skyrmion memory, skyrmion memory device, skyrmion-memory embedded solid-state electronic device, data storage apparatus, data processing and communication apparatus

To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.

A magnetic storage media which has an endurance (durability) characteristics close to an infinite number of writing times of data and a data retention (holding) characteristics close to permanency, and is ultra-high-speed writable and erasable, and a data storage device and an image storage device which apply this magnetic storage media are provided. A magnetic storage media includes a thin layer magnet and a magnetic field generating unit arranged facing a surface of the magnet, and is capable of creating or eliminating a skyrmion by applying heat energy to another surface of the magnet positioned on the opposite side of the surface of the magnet, and a skyrmion memory includes the magnetic storage media.

Magnetic storage media and data storage device

Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.

Magnetic element, skyrmion memory, solid-state electronic device data recording apparatus, data processing apparatus, and communication apparatus

The present invention provides a rare earth element-doped optical fiber amplifier having a function which allows to omit an optical isolator component, and a method for providing the optical non-reciprocity using the same. In the optical fiber, the optical fiber matrix material is a ferroelectric solid state material, and the ferroelectric solid state material is doped by a rare earth element such as erbium (Er) or thulium (Tm). The optical fiber is characterized by an optical amplification function and an optical non-reciprocity function.

Optical fiber element and method for imparting non-reciprocity of light using the same

To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO/SrTiO/LaMnOis arranged between a ferromagnetic metal material LaSrMnO() and a ferromagnetic metal film material LaSrMnO(). The tunneling film comprises two unit layers of LaMnO(A) arranged on the ferromagnetic metal material LaSrMnO(); five unit layers of SrTiO(B); and two unit layers of LaMnO(C) arranged at the interface between the SrTiO(B) and the ferromagnetic metal film material LaSrMnO().

Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling film

A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a LaSrMnOelectrode (), a LaSrMnRuOelectrode (), both as ferromagnetic (including ferrimagnetic) metal materials, and a LaAlO(electrically insulating layer) () arranged between the two electrodes () and ().

Tunnel junction device

The present invention provides a magnetic sensor capable of reproducing a magnetic record even if the size of a recorded magnetization is a minute one, directly reading a magnetization recorded on a magneto-optical disk without applying incident light itself to the magneto-optical disk, and obtaining signals of a second harmonic having a high S/N ratio. This magnetic sensor includes a magnetic sensor element () having electric polarization disposed with respect to a perpendicular recording medium (), and laser generating means acting on the magnetic sensor element (). The magnetic sensor reads information in the perpendicular recording medium () based on the variation of the rotation angle &#x3c6; of the polarization plane of a second harmonic () of a frequency 2&#x3c9; exiting the magnetic sensor element () by the application of laser light () with a frequency &#x3c9; from the laser generation means to the magnetic sensor element ().

Magnetic sensor

A magnetooptic element whose size is essentially that of a lattice, namely several angstroms in size of magnetic material and which at the same time has its exhibiting magnetooptic effect detectable is provided along with a magnetooptic disk, a memory device and a magnetooptical picture or image display with a storage capacity of several terabits per square inch or more, each using such a magnetooptic element. The magnetooptic element utilizes a gigantic effective magnetic filed based on a spin chirality formed by geometrically configuring the spin orientation and crystallographic structure of a certain solid material. The solid material exhibiting the spin chirality may be such as a pyrochlore type oxide compound whose chemical composition is represented by chemical formula: ABOwhere A is a rare-earth element and B is a transition metal, or a pyrochlore type oxide compound whose chemical composition is represented by chemical formula: (AC)BOwhere A is a rare-earth element, C is an alkali-earth metallic element and B is a transition metal and where 0&#x3c;x&#x3c;1.

Magnetooptic element exploiting spin chirality

A manufacturing method of a GaFeOcrystal is provided which can form a superior, uniform, and large crystal. By a floating zone melting method in which ends of material bars (), which are disposed at an upper and a lower position and which are composed of GaFeO, are heated in a gas atmosphere with halogen lamps () disposed at confocal areas so as to form a floating melting zone between the ends of the material bars () which are disposed at the upper and the lower position and which are composed of GaFeO, GaFeOa single crystal having an orthorhombic crystal structure is formed.

Growing community of inventors

Chiba, Japan

Yoshio Kaneko