Memc Electronic Materials, Inc.

Yoshio Iwamoto

Philip R Schmidt

James C Lenk

Craig Spohr

Leslie G Stanton

Hiroyuki Kurokawa

A method for calibrating a semiconductor wafer drying apparatus including a heater and a vessel containing a solvent and capable of receiving semiconductor wafers comprises selecting a test heater temperature and a test processing time. A first set of wafers is placed in the vessel and the heater is operated at the test heater temperature so that a solvent vapor cloud is created in the vessel. The first set of wafers is monitored for substantial envelopment by the vapor cloud during the test processing time. Based on the monitoring step, at least one of the test heater temperature and the test processing time is adjusted to establish at least one operating parameter of an operating heater temperature parameter and an operating processing time parameter for processing successive sets of wafers so as to promote substantial vapor cloud envelopment of each set of wafers dried in the drying apparatus.

Method of calibrating a semiconductor wafer drying apparatus

A carrier for receiving and holding a plurality of semiconductor wafers and permitting surfaces of the wafers to receive maximum exposure to ultrasonic waves during a wafer cleaning process in which the carrier and the wafers are immersed in a liquid medium and ultrasonic waves are generated in the liquid medium. The carrier includes two vertical sidewalls and at least three horizontal supporting rods that interconnect the sidewalls and that are collectively positioned for supporting wafers in generally upright, face to face position generally parallel to each other. At least one stabilizing rod extends horizontally between the sidewalls for limiting wafer motion relative to the carrier to steady the wafers. A series of spaced apart teeth on the stabilizing rod define troughs for receiving wafers loosely therein to prevent substantial vibratory deflections of the wafers.

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Utsunomiya, Japan

Yoshio Iwamoto