Nippon Sanso Corporation

Other

Taiyo Nippon Sanso Corporation

Horiba, Ltd.

Mitsubishi Materials Silicon Corporation

Ube Material Industries, Ltd.

Yoshio Ishihara

Tadahiro Ohmi

Hiroshi Masusaki

Hiroyuki Hasegawa

Tomonori Yamaoka

Koh Matsumoto

Shang-Qian Wu

Masayuki Toda

Tetsuya Kimijima

Katsumasa Suzuki

Ryosuke Fukushima

Jun-ichi Morishita

Akihiro Nakamura

Takashi Watanabe

Takayuki Watanabe

Shigeru Hayashida

Takashi Kishimoto

Hiroki Tokunaga

Shinichi Yamamoto

Fumio Okada

Takayuki Satou

Masaya Yamawaki

Tadanobu Arimura

Kaoru Sakoda

Toru Nagasaka

Daiji Nakajima

Hiroshi Yamazaki

Osamu Misumi

Sumiyo Yamane

A method which separates a component which is easily adsorbed by an adsorbent and a component which is not easily adsorbed by the adsorbent, from a feed gas which includes at least two kinds of components, with adsorption columns, wherein the adsorbent is filled in the adsorption columns and has strong adsorbability with respect to at least one kind of component included in the feed gas, and also has weak adsorbability with respect to at least one kind of other components included in the feed gas, and a temperature of the adsorbents which is filled in the column is maintained to be higher than the highest temperature of an ambient temperature around the adsorption columns which is variable throughout the year.

Pressure swing adsorption-type gas separation method and separation apparatus

A granular material having a high strength and a large BET specific surface area composed of porous particles comprising calcium oxide and calcium hydroxide wherein the calcium oxide is contained in an amount of 30 to 80 weight % based on a total amount of the calcium oxide and calcium hydroxide and the porous particles have a BET specific surface area of 40 m/g or more, or composed of porous particles comprising calcium oxide, magnesium oxide, calcium hydroxide, and magnesium hydroxide wherein a ratio of an amount of magnesium to a total of an amount of calcium and an amount of magnesium is in the range of 0.05 to 0.80, a total hydroxide content in the whole particles is in the range of 1 to 20 weight % and the porous particles have a BET specific surface area of 50 m/g or more.

Granular material comprising porous particles containing calcium and/or magnesium

A process for recovering rare gases using a gas-recovering container and, more particularly, a process of recovering a rare gas in a rare gas-containing exhaust gas discharged from an equipment using said rare gas, and introducing the recovered rare gas-containing exhaust gas into rare gas separation and purifying equipment and therein separating and purifying the rare gas.

Process for recovering rare gases using gas-recovering container

Gas supplying method and system in which effective component gas in exhaust gas can be separated and purified efficiently to be resupplied regardless of variation in the flow rate or composition of the exhaust gas and consumed gas can be replenished efficiently. In a method for collecting exhaust gas discharged from a gas using facility, separating/purifying effective component gas contained in the exhaust gas and supplying the effective component gas thus obtained to the gas using facility, the exhaust gas discharged from the gas using facility is added with a replenishing gas of the same components as the effective component gas before the effective component gas is separated and purified.

Gas supplying method and system

A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.

Semiconductor manufacturing method and semiconductor manufacturing apparatus

The present invention discloses a CVD apparatus which, together with being able to efficiently perform purging treatment after maintenance, uses for the purge gas a mixed gas of a gas having high thermal conductivity and an inert gas during heated flow purging treatment after maintenance to perform startup of the CVD apparatus while reducing the amount of time required for purging treatment. Purging treatment before semiconductor film formation is performed by repeating the pumping of a vacuum and the introduction of inert gas a plurality of times. In addition, in order to judge suitable maintenance times of semiconductor production apparatuses that perform corrosive gas treatment in a reaction chamber, the moisture concentration in reaction chamber is measured with moisture meter connected to the reaction chamber when performing the corrosive gas treatment, and maintenance times of the semiconductor production apparatus are determined according to changes in the moisture concentration when corrosive gas treatment is performed repeatedly. In addition, in order to measure the moisture of corrosive gas during processing while preventing obstruction of piping in a moisture monitoring apparatus and semiconductor production apparatus equipped therewith, a moisture monitoring apparatus, which is equipped with a pipe, of which one end is connected to reaction chamber into which corrosive gas flows, and a moisture meter connected to the other end of that pipe which measures the moisture contained in the corrosive gas introduced from the reaction chamber, is at least equipped with pipe heating mechanism that heats the pipe.

Method of purging CVD apparatus and method for judging maintenance of times of semiconductor production apparatuses

A process for treating and recovering CVD exhaust gas is provided, which can reduce periodical maintenance by converting the raw gas employed and the intermediate products contained in the CVD system into highly volatile halides, separating and recovering them as materials with good reusability. An unreacted raw gas and intermediate products contained in CVD exhaust gas are partially decomposed by being subject to decomposition treatment or conversion reaction treatment, and then halogenosilane gas and hydrogen chloride are separated and recovered. Alternatively, a raw gas and intermediate products are decomposed into hydrogen chloride and recovered.

Process for treating exhaust gas

Semiconductor manufacturing apparatus having a moisture measuring device

There is provided a method and an apparatus for collecting a rare gas, which are capable of effectively collecting the rare gas contained in an exhaust gas exhausted from a rare gas using apparatus such as a plasma apparatus or the like, and moreover capable of securely supplying the rare gas having a predetermined purity to the rare gas using apparatus, and the method for collecting rare gas which comprises collecting a rare gas contained in an exhaust gas exhausted from a rare gas using apparatus operated under decompression, the method comprises the step of collecting the rare gas by separating the rare gas and impurities contained in the exhaust gas via at least two gas separating steps.

Method and apparatus for collecting rare gas

A gas spectroscopic analysis device for analyzing a trace impurity in a sample gas by obtaining the second derivative spectrum of the light absorption intensity by passing frequency modulated diode laser light through a low-pressure sample gas is provided with a modulation amplitude calculating device ( ) for controlling the modulation amplitude of the laser light in accordance with the characteristics of diode laser ( ); a spectrum calculating device ( ) for calculating the peak absorption intensity and the wavelength interval between the minimum values on the left and right hand of the peak in the second derivative spectrum obtained by measurement; and a pressure adjusting device ( ) for controlling the pressure inside measuring gas-cell ( ) so that the value of the absorption intensity obtained at spectrum calculating device ( ) becomes maximal. The optimal value of the modulation amplitude of the laser light is set so that the wavelength interval between the minimum values on the left and right hand of the peak in the second derivative spectrum is 0.0116 nm. The measurement pressure is optimized by setting the modulation amplitude to an optimal value.

Gas spectrochemical analyzer, and spectrochemical analyzing method

A process and an apparatus for treating an exhaust gas, in which a raw gas and high-boiling intermediate products contained in the exhaust gas let out from a CVD system employing a silicon-containing gas is brought into contact with a transition metal such as nickel or a silicide of such transition metals to decompose or convert them into stable halides, followed by detoxication treatment of the harmful components contained in the exhaust gas.

Method and device for treating exhaust gas

The present invention uses a transportation robot furnished with a storage chamber that can store substrate wafers S under an inert gas atmosphere, and when transporting substrate wafers S between transportation chambers installed on processing apparatus and holding an inert gas atmosphere, connection chamber is disposed between storage chamber and transportation chamber when placing and removing substrate wafers S between storage chamber of transportation robot and the transportation chamber of processing apparatus , and after introducing inert gas into the connection chamber at low pressure, opening the gate valves GV and GV between storage chamber and transportation chamber

Transportation method for substrate wafers and transportation apparatus

A system and a process for producing and supplying clean dry air capable of producing and supplying clean dry air more inexpensively and using a smaller production plant and also recycling effectively the clean dry air. The system is provided with a clean room containing a transportation system having a storage, a conveyor, etc., and an equipment; a supply passage for supplying the clean dry air to the transportation system and/or the equipment; and a recycling passage for recycling a used clean dry air used in the transportation system and/or the equipment and exhausted therefrom to the transportation system and/or the equipment. The supply passage is connected to the transportation system, whereas the recycling passage is connected to the storage such that the clean dry air used in the transportation system and that in the storage are recycled to the storage.

System and method for producing and supplying highly clean dry air

A transport system for transporting substrate wafer, for making semiconductor integrated circuits and liquid crystal display panels and the like advanced devices, is presented.

Growing community of inventors

Tokyo, Japan

Yoshio Ishihara