Other

Nagoya University

Toyoda Gosei Co., Ltd.

Toyota Jidosha Kabushiki Kaisha

Sharp Kabushiki Kaisha Corporation

Idemitsu Kosan Company, Limited

Sumco Corporation

Tokai National Higher Education and Research System

National University Corporation Tokai National Higher Education and Research System

Yoshio Honda

Nobuhiko Sawaki

Hiroshi Amano

Norikatsu Koide

Shugo Nitta

Naoki Fujimoto

Katsuki Furukawa

Masahito Yamaguchi

Kentaro Nagamatsu

Koji Matsumoto

Toshiaki Ono

Shigetoshi Ito

Shigekazu Tomai

Tomoki Ono

Rentaro Mori

Akira Kiyama

Yoshihiro Ueoka

Maki Kushimoto

Masayuki Ichiyanagi

Satoshi Katsumata

Junji Yamamoto

Hiroya Inaoka

Norifumi Kameshiro

Tsuyoshi Dohkita

Yousuke Kuroiwa

Manato Deki

Yasuyuki Yanase

A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10S/cm or more.

Light emitting device with electrode having specified molar ratio of magnesium to zinc

A vapor phase epitaxial growth device comprises a reactor vessel and a wafer holder arranged within the reactor vessel. The wafer holder includes a wafer holding surface configured to hold a wafer with a wafer surface oriented substantially vertically downward. The device comprises a first material gas supply pipe configured to supply a first material gas and arranged below the wafer holding surface. The device comprises a second material gas supply pipe configured to supply a second material gas and arranged below the wafer holding surface. The device comprises a gas exhaust pipe configured to exhaust gases and arranged below the wafer holding surface. A distance between the gas exhaust pipe and an axis line passing through a center of the wafer holding surface is greater than distances between the axis line and each of the first material gas supply pipe and the second material gas supply pipe.

Vapor phase epitaxial growth device

A vapor phase epitaxial growth device comprises a reactor vessel. The device comprises a wafer holder arranged in the reactor vessel. The device comprises a first material gas supply pipe configured to supply first material gas to the reactor vessel. The device comprises a second material gas supply pipe configured to supply second material gas, which is to react with the first material gas, to the reactor vessel. The device comprises a particular gas supply pipe having a solid unit arranged on a supply passage. The device comprises a first heater unit configured to heat the solid unit to a predetermined temperature or higher. The solid unit comprises a mother region and a first region arranged continuously within the mother region. The mother region is a region that does not decompose at the predetermined temperature. The first region is a region that decomposes at the predetermined temperature and contains Mg.

A manufacturing method for a group III nitride semiconductor substrate is provided with a first step of forming a second group III nitride semiconductor layer on a substrate; a second step of forming a protective layer on the second group III nitride semiconductor layer; a third step of selectively forming pits on dislocation portions of the second group III nitride semiconductor layer by gas-phase etching applied to the protective layer and the second group III nitride semiconductor layer; and a fourth step of forming a third group III nitride semiconductor layer on the second group III nitride semiconductor layer and/or the remaining protective layer so as to allow the pits to remain.

Manufacturing method for group III nitride semiconductor substrate and group III nitride semiconductor substrate

Light emitters and substrates for light emitters are provided to improve light-emitting efficiency and achieve improvement in crystal quality. A light emitter includes a single-crystal substrate, an oriented microcrystal layer, and a light-emitting layer. The light-emitting layer is made of a nitride semiconductor by means of a vapor-phase growth method. In the oriented microcrystal layer, the proportion of crystals, in which one of crystal axes is oriented with respect to the single-crystal substrate, is 5-9 out of 10 crystals. An average diameter of the crystal grains of the respective crystals, contained in the oriented microcrystal layer, is 1-1,000 nm. A light emitter may be equipped with an intermediate layer, a light-emitting layer, and a clad layer. These layers are formed on the oriented microcrystal layer by a vapor-phase growth method. The light-emitting layer contains microcrystal grains whose average grain diameter is 1-1,000 nm.

Substrate for forming light-emitting layer, light emitter and light-emitting substance

A mask layer with an opening is formed on a main surface of a silicon substrate, which is exposed in the opening. Then, a hexagonal pyramidal island-shaped portion is formed from a first semiconductor nitride in the opening to complete a semiconductor element structure.

Semiconductor element structure, electron emitter and method for fabricating a semiconductor element structure

A semiconductor laser device includes a substrate and an n-GaN layer composed of a nitride semiconductor formed on the substrate. The substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the substrate, or a plane inclined within 3 degrees in an arbitrary direction from the inclined plane. The n-GaN layer is formed on the slope. On the n-GaN layer are formed a lower clad layer, an active layer, and an upper clad layer, each composed of a nitride semiconductor. The active layer has a plane orientation substantially matching the plane orientation of the main plane.

Semiconductor laser device and fabrication method thereof

A method for producing a semiconductor light emitting device includes the steps of forming a mask layer having a plurality of openings on a surface of a silicon substrate; and forming a column-like multi-layer structure including a light emitting layer in each of the plurality of openings with nitride semiconductor materials. A width between two adjacent openings of the plurality of openings of the mask layer is 10 &mgr;m or less.

Semiconductor light emitting device and method for producing the same

A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of In Ga Al N (where x&plus;y&plus;z&equals;1, 0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1). The silicon substrate includes a trench having as a slope a plane inclined 62 degrees from the main plane of the silicon substrate, or a plane inclined in a range within 3 degrees in an arbitrary direction from the inclined plane. The compound semiconductor layer is formed on the slope. The semiconductor device includes compound semiconductor layers represented by Al Ga In N (where x&plus;y&plus;z&equals;1, 0&lE;x&lE;1, 0&lE;y&lE;1, 0&lE;z&lE;1) on a silicon substrate. The silicon substrate has a main plane constituted by a plane in a range of &plusmn;5 degrees in an arbitrary direction from a (112) plane. The compound semiconductor layers are formed on the main plane.

Semiconductor device including an InGaAIN layer

Growing community of inventors

Nagoya, Japan

Yoshio Honda