Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Hitachi Vlsi Engineering Corp.

Yoshio Homma

Seiichi Kondo

Noriyuki Sakuma

Kenji Hinode

Naofumi Ohashi

Toshinori Imai

Nobuo Owada

Hizuru Yamaguchi

Shigeo Moriyama

Junji Noguchi

Kenichi Takeda

Natsuki Yokoyama

Kikuo Kusukawa

Katsuhiko Yamaguchi

Takeshi Kimura

Kiichiro Mukai

Sukeyoshi Tsunekawa

Masayuki Nagasawa

Hiroki Nezu

Kan Yasui

Masayuki Suzuki

Nobuyoshi Kobayashi

Youhei Yamada

Hidekazu Goto

Masaaki Fujimori

Sunao Matsubara

Yoshihiro Ishida

Hiroshi Morisaki

Ryousei Kawa-ai

Shinichi Ito

Hiroshi Nakano

Yoshitaka Nakamura

Haruo Akahoshi

Noriyuki Kumasaka

Yoshihiro Shiroishi

Yoshio Kawamura

Kazuo Shiiki

Isamu Yuito

Takeyuki Itabashi

Sadayuki Okudaira

Makoto Suzuki

Katsuro Sasaki

Norio Ohkubo

Mitsuhiro Kudo

Takeshi Furusawa

Takashi Nishida

Seiki Harada

Tadao Kaji

Atsushi Saiki

Shunji Sasabe

Hiroshi Miyazaki

Eiji Sasaki

In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

Process for manufacturing semiconductor integrated circuit device

A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

Polishing method

Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device

A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

In order to polish an insulating film, a cerium oxide polishing agent (ceria slurry) is used. The ceria slurry is composed of cerium oxide powder containing Na, Ca, Fe, and Cr concentration of which is less than 10 ppm. Fragile inorganic and organic insulating films formed at relatively low temperatures can be polished without degrading the characteristics of the semiconductor element due to Na diffusion.

Polishing agent and polishing method

In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Polishing apparatus

The apparatus and method for producing a substrate having a substrate surface by polishing the substrate surface, which includes a metallic wire. A polishing liquid is supplied a clearance between the substrate surface and the surface of a polishing pad. The polishing liquid includes an acid which dissolves the oxidized part of the substrate surface and is substantially free of solid abrasive powder. A relative movement is generated between the substrate surface and the polishing pad surface while the substrate surface is pressed against the polishing pad surface while the polishing liquid is supplied so that the dissolved oxidized part of the substrate surface can be removed from the substrate.

Apparatus and method for producing substrate with electrical wire thereon

A process for selectively forming a metal barrier layer on a surface of an interconnect of a wiring substrate comprising the steps of abrading the substrate and simultaneously feeding onto the substrate a plating solution having said metal dissolved therein. The abrading step comprises contacting the substrate against an abrasive surface and causing relative linear and/or rotary motion between the abrasive surface and the substrate while the substrate is in contact with the abrasive surface. Growth of the metal barrier layer on a portion of the wiring substrate other than the interconnect layer is suppressed and the metal barrier layer thus formed is thinner, exhibits improved uniformity and superior prevention against Cu diffusion.

Process and apparatus for manufacturing a semiconductor device

The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

Methods of polishing, interconnect-fabrication, and producing semiconductor devices

Growing community of inventors

Hinode-machi, Japan

Yoshio Homma