Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Yoshio Fukasawa

Kosuke Imafuku

Yukio Naito

Fumihiko Higuchi

Hiroshi Tsuchiya

Kazuya Nagaseki

Akira Koshiishi

Koji Suzuki

Keizo Hirose

Masayuki Tomoyasu

Ryo Nonaka

Shosuke Endo

Kazuhiro Tahara

Takashi Tozawa

Shozo Hosoda

Tatsuya Nakagome

Shuji Mochizuki

Yasumasa Ishihara

Isao Kobayashi

Kenji Momose

Mahito Kajihara

Minoru Aoyagi

A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

Plasma processing apparatus

A plasma etching apparatus includes a process chamber that can be set at a reduced pressure. A lower electrode on which a semiconductor wafer is placed and an upper electrode opposing the lower electrode are disposed in the process chamber. The lower and upper electrodes are connected to RF power supplies, respectively. First and second RF powers, the phases and power ratio of which are separately controlled, can be applied to the upper and lower electrodes. Parameters including the frequencies, power values, and relative phases of the first and second RF powers are selected in order to set the etching characteristics, e.g., an etching rate, the planar uniformity of the etching rate, the etching selectivity ratio and the like to predetermined values. During etching, the first and second RF powers are monitored by separate detectors, and are maintained at initial preset values through a controller.

Plasma processing method and plasma etching method

A vacuum process apparatus includes a convey chamber having a plurality of loading/unloading ports and an airtight structure kept in a vacuum when a target object is conveyed, at least one preliminary vacuum chamber connected to the convey chamber through a loading/unloading port, a plurality of vacuum process chambers connected to the convey chamber through the loading/unloading ports and each having a vacuum process mechanism, a plurality of gate valves for opening/closing the plurality of loading/unloading ports, and a multi-joint arm member, arranged in the convey chamber, for conveying the target object between the convey chamber and the vacuum process chambers, and between the convey chamber and the preliminary chamber. The convey chamber is evacuated through a bearing for a pivot shaft of the multi-joint arm member.

Vacuum process apparatus and vacuum processing method

In plasma-etching a polysilicon layer of a semiconductor wafer where the polysilicon layer is formed on an SiO.sub.2 film, plasma of a processing gas including a halogen element containing gas and a gas containing oxygen or nitrogen is generated, and a predetermined portion of the polysilicon layer is selectively exposed in plasma, thereby etching the portion.

Etching method for silicon containing layer

The present invention provides a dry etching method for achieving a satisfactory anisotropic etching of, for example, a semiconductor wafer, particularly, a polysilicon layer formed on the wafer. In the present invention, a mixed gas comprising a first gas containing Br and a second gas containing a halogen element other than Br, e.g., a mixed gas consisting of a HBr gas and a HCl gas, is introduced into a vacuum chamber. The mixed gas is converted into plasma by applying a high frequency power to an upper electrode 5. The plasma region is irradiated, as desired, with an ultraviolet light. The semiconductor wafer is etched with the plasma. The etching is carried out under optimum conditions. For example, the surface temperature of the semiconductor wafer, i.e., workpiece, is maintained at a level falling within a range of between 70.degree. C. and 120.degree. C. Also, the flow rate ratio of the mixed gas is suitably controlled.

Dry etching polysilicon using a bromine-containing gas

A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.

Plasma processing method

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Kofu, Japan

Yoshio Fukasawa