Japan Synthetic Rubber Co., Ltd.

Renesas Electronics Corporation

Hitachi Metals, Ltd.

Nec Corporation

Nikon-essilor Co., Ltd.

Nikon Corporation

Konica Minolta, Inc.

Other

Hitachi High-tech Corporation

Kyoto University

Ips Academia Japan, Inc.

Yoshinori Yoshida

Hironobu Shinohara

Tsuyoshi Kachi

Hiroshi Oka

Akihisa Shimomura

Yohei Sato

Masahiro Mori

Hirokazu Kato

Masao Hashimoto

Hiroaki Kozai

Yukio Honma

Katsuya Okumura

Hideya Inoue

Shinya Yamanaka

Toshiya Tanaka

Yutaka Kouzuma

Hirohide Saito

Keisuke Furuya

Takao Miura

Yoichi Kamoshida

Akira Arutaki

Koji Yamagaki

Kenji Miki

Kei Endo

Akira Sasaki

Kazuyuki Hirozane

Noboru Yamahara

Fujio Shimizu

Toshio Ishizuka

Suminori Yoshikawa

Tomoyoshi Shimizu

Seiya Takahashi

Kazuo Tsuzuki

Takaaki Inotani

Chozo Okuda

Toshihiko Takahashi

Yoshiro Yamamoto

Tutomu Kobayashi

Izumi Hanari

Yuuzi Naitou

Kiyonobu Kubota

Makoto Ibayashi

Hideki Nakane

Mitsugu Anezaki

Takashi Toku

Masaharu Ohshima

An inkjet head includes a first and a second channel substrates. At least one of the first and the second channel substrates is formed of silicon. A bonding interface of the first and the second channel substrates is bonded via an adhesive layer. A protective film containing a compound having a Si—C bond is formed on: an ink channel surface formed of silicon among the first and the second channel substrates; and a surface of the channel substrate side formed of silicon in the adhesive layer.

Inkjet head, and method for producing inkjet head

A plasma processing apparatus that can inhibit clustering of gas and supply the gas stably, including an integrated gas box configured to adjust the flow rate of gas, and a discharge portion, and the integrated gas box includes gas blocks including a flow path through which the gas flows, a heater configured to heat the flow path, a bypass path provided in the flow path, and a flow controller configured to detect the inflow amount of the gas and output the gas from the flow path to the discharge portion. The heater is configured to perform heating to a predetermined temperature based on the type of the gas. The predetermined temperature is, for example, 65° C. or more. The bypass path includes a flow path causing a change in the pressure of the gas flowing through the flow path.

Plasma processing apparatus

An inkjet head contains a silicon nozzle substrate having an ink channel surface and an ink ejection surface facing the channel surface, and having a nozzle penetrating from the channel surface to the ejection surface; a channel substrate bonded to the channel surface of the silicon nozzle substrate, and including an ink channel and a substrate body that forms the ink channel; and a liquid-repellent film provided on the ejection surface of the silicon nozzle substrate. The channel substrate includes a through channel that penetrates the substrate body so as to face the nozzle, n-number of individual circulation channels that communicate with the through channel, extend in a direction away from the nozzle, and have a portion overlapping the substrate body in a plan view. A positional relationship between each of the individual circulation channels and the nozzle satisfies a specific Expression 1.

Inkjet head, production method for inkjet head, and inkjet-recording device

A method for designing an eyeglass lens includes: displaying an image upon a display device while maintaining a positional relationship of a face of a subject and the display device; acquiring information in which visual sensitivity of the subject is evaluated on the basis of an impression received by the subject who has viewed the image; and designing an eyeglass lens on the basis of the information in which the sensitivity is evaluated.

Method for designing eyeglass lens, method for manufacturing eyeglass lens, eyeglass lens, eyeglass lens ordering device, eyeglass lens order receiving device, and eyeglass lens ordering and order receiving system

A pipe joint connecting a first pipe having conductivity and being grounded and a second pipe including a corrugated metallic pipe member and a conductive layer having lower electric resistance than metal forming the pipe member and covering the pipe member, the pipe joint including a connection part that has conductivity and is connected to the first pipe, a housing part that has conductivity, is engaged with the connection part, and houses the second pipe inside the housing part by insertion of the second pipe along an axis direction of the second pipe, and a conductive member that includes a first part in contact at least partially with the housing part and a second part exposed to an outside of the housing part to be in contact with the conductive layer.

Pipe joint

A tube includes a corrugated metal tubular member; and a first covering part that covers the outside of the tubular member, and forms a braided structure using a resin string member of which at least a part is covered by a metal having lower electrical resistance than that of a metal forming the tubular member. The tube can also include a third covering part made of an insulating resin arranged between the tubular member and the first covering part, and covers the tubular member, wherein the first covering part covers the third covering part.

Tube

A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.

Vaporizer

A pipe joint includes a hollow joint main body; a nut that is screwed into the joint main body; a seal member that is mounted to inside of the joint main body; and a retainer that is placed between the joint main body and the nut and comprises a pawl portion engaged with a trough of a metal flexible pipe in a coupled state and a retainer locking portion caught and locked inside of the joint main body in the coupled state.

A semiconductor device with an insulated-gate field-effect transistor and its manufacturing method. The cell region EFR defined in the first region of one main surface side of semiconductor substrate (SUB), an insulated gate-type field-effect transistor (MFET) is formed, the gate pad region GPR defined in the first region, snubber circuit SNC is formed snubber region SNR is defined. Within the first and second regions, first and second deep trenches spaced apart from each other are formed, and at least one width of the plurality of second deep trenches formed in the second region is smaller than that of the first deep trench formed in the first region.

Semiconductor device and method of manufacturing the same

Provided are a semiconductor device including a desired snubber part in accordance with use of the semiconductor device and a method of manufacturing the semiconductor device. A snubber region having a snubber part is defined in a gate pad region defined on a side close to a first main surface of a semiconductor substrate. A p-type diffusion layer and an n-type column layer contacted to each other are formed in the snubber region. The p-type diffusion layer and the n-type column layer are formed as a parasitic capacitance of the snubber part while the n-type column layer is electrically coupled to a drain. The p-type diffusion layer, which extends in a Y-axis direction, is a resistance of the snubber part and electrically coupled to a source.

Semiconductor device and method of manufacturing the semiconductor device

A semiconductor substrate is easily warped by the shrink of the insulating film formed within the deep trench according to the thermal processing in the super junction structure. In order to solve the above problem, in a semiconductor device, an element region and a terminal region are defined on one main surface of the semiconductor substrate. The terminal region is arranged to surround the element region. In the terminal region, a plurality of buried insulators are formed from the main surface of the semiconductor substrate in a way of penetrating an n-type diffusion layer and an n-type column layer and arriving at an n-type epitaxial layer. The buried insulator is formed within a deep trench. The plural buried insulators are arranged in island shapes mutually at a distance from each other.

Semiconductor device and manufacturing method thereof

A lens processing management system includes a lens processing section that processes a lens based on design data, an authentication section that is substantially attached to a lens material or a semi-finished lens product, and an authentication processing section that performs an authentication process for the processing of the lens using the authentication section.

Lens manufacturing system, lens manufacturing method, computer program, lens design data use management system, lens design data use management device, lens processing management device, lens processing management method, lens processing management system, lens design data use management program, and lens processing management program

Provided is a semiconductor device having improved performance. A semiconductor substrate is formed with unit LDMOSFET elements. The unit LDMOSFET elements have respective source regions electrically coupled to each other via a first source interconnect line and a second source interconnect line. The unit LDMOSFET elements have respective gate electrodes electrically coupled to each other via a first gate interconnect line and also electrically coupled to a second gate interconnect line in the same layer as that of the second source interconnect line via the first gate interconnect line. The unit LDMOSFET elements have respective drain regions electrically coupled to a back surface electrode via a conductive plug embedded in a trench of the semiconductor substrate. Each of the first source interconnect line and the first gate interconnect line has a thickness smaller than that of the second source interconnect line. Over the plug, the first gate interconnect line extends.

Semiconductor device

A lens processing management system () includes: a processing device () which processes lenses; a data supply device () which can supply design data to the processing device; and a control means () which limits the processing of lenses using the design data in the processing device.

Lens treatment management system

Growing community of inventors

Tokyo, Japan

Yoshinori Yoshida