Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Yoshinori Yokoyama

Shinnosuke Soda

Jun Fujita

Kazuyasu Nishikawa

Akira Inoue

Yoshitsugu Yamamoto

Hiroshi Kobayashi

Yoichi Nogami

Motoru Yoshida

Yuji Sato

Kazuyo Endo

Kazuyuki Sugahara

Toshiaki Shinohara

Yosuke Nakata

Yoshio Fujii

Tadayoshi Kitayama

Koji Yamazaki

Yoshiyuki Suehiro

Aritomo Uemura

Munehisa Takeda

Yosuke Nakanishi

Tetsu Negishi

Komei Hayashi

Akihisa Fukumoto

Hitoshi Ota

Narihito Ota

Hiroshi Fukumoto

Shinpei Ogawa

A power module is obtained in which the thermal resistance in the range from a semiconductor device to a base plate is reduced and the stress in the joining portion is relieved. The power module includes at least one semiconductor device, an insulating substrate having an insulating layer, a circuit layer provided on an upper surface of the insulating layer and a metal layer provided on a lower surface of the insulating layer, and a sintering joining member with an upper surface larger in outer circumference than a back surface of the at least one semiconductor device, to join together the back surface of the at least one semiconductor device and an upper surface of the circuit layer on an upper-surface side of the insulating layer.

Power module and power conversion device

A semiconductor apparatus includes: a first conductor plate; a second conductor plate separated from the first conductor plate; a plurality of semiconductor devices having back surface electrodes connected to the first conductor plate; a relay substrate mounted on the second conductor plate and including a plurality of first relay pads and a second relay pad connected to the plurality of first relay pads; a plurality of metal wires respectively connecting control electrodes of the plurality of semiconductor devices to the plurality of first relay pads; a first conductor block connected to front surface electrodes of the plurality of semiconductor devices; a second conductor block connected to the second relay pad; and a sealing material sealing the first and second conductor plates, the plurality of semiconductor devices, the relay substrate, the metal wire, and the first and second conductor blocks, the sealing material includes a first principal surface and a second principal surface opposed to each other, the first conductor plate is exposed from the first principal surface, the second conductor plate is not exposed from the first principal surface, and the first and second conductor blocks are exposed from the second principal surface.

Semiconductor apparatus, power module, and manufacturing method of semiconductor apparatus

A semiconductor device includes a base plate, a substrate, a semiconductor element, a case, and a wiring terminal. The case is disposed on the base plate so as to cover the substrate and the semiconductor element. The wiring terminal is electrically connected to the semiconductor element. The case includes a first case unit and a second case unit that is separate from the first case unit. The wiring terminal includes a first wiring unit and a second wiring unit. The first wiring unit is disposed so as to protrude from an inside to an outside of the case, and is electrically connected to the semiconductor element. The second wiring unit is bent with respect to the first wiring unit and disposed outside the case. The first case unit and the second case unit are disposed so as to sandwich the first wiring unit.

Semiconductor device, power conversion device, and method for manufacturing semiconductor device

Provided is a semiconductor device free from chipping of a thin semiconductor element during transportation. The semiconductor device includes: a thin semiconductor element including a front-side electrode on the front side of the semiconductor element, and including a back-side electrode on the back side of the semiconductor element; a metallic member formed on at least one of the front-side electrode and the back-side electrode, the metallic member having a thickness equal to or greater than the thickness of the semiconductor element; and a resin member in contact with the lateral side of the metallic member and surrounding the periphery of the metallic member, with a part of the front side of the semiconductor element being exposed.

Semiconductor device, method for manufacturing the same, and semiconductor module

A power semiconductor device having a high degree of reliability even when an operable temperature of a power semiconductor element is sufficiently increased. The power semiconductor device includes: a power semiconductor element including an electrode formed on a first surface; a first stress mitigation portion connected to the electrode with a first bonding portion being interposed; and a wiring portion electrically connected to the first stress mitigation portion with a second bonding portion being interposed. A bonding strength of the first bonding portion is higher than a bonding strength of the second bonding portion.

Power semiconductor device

Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Semiconductor device and method for manufacturing same, for releaved stress and high heat conductivity

A power module includes an insulated circuit board, a semiconductor element, a first buffer plate, and first and second joining materials. The semiconductor element is disposed on a side of one main surface of the insulated circuit board. The first buffer plate is disposed between the insulated circuit board and the semiconductor element. The first joining material is divided into a plurality of portions in a plan view. The first buffer plate is higher in coefficient of linear expansion than the semiconductor element and lower in coefficient of linear expansion than the insulated circuit board. The first buffer plate is lower in Young's modulus than the semiconductor element.

Power module

A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate.

Method for manufacturing semiconductor device

A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 10-10&#x3a9;/&#x25a1;.

Semiconductor device

An upper sealing ring and a lower sealing ring are adhered by sealing solder. The width of tip end of sealing projection is narrower than the width of the lower sealing ring. Therefore, the sealing solder is placed on lower sealing ring and on the side surface of upper sealing ring. Further, an upper connection pad and a lower connection pad are adhered by connecting solder. The width of a tip end of a connection projection is narrower than the width of lower connection pad. Therefore, the connecting solder is placed on the lower connection pad and on the side surface of upper connection pad. Thus, a package is provided, which attains satisfactory electrical connection and hermetic seal after solder joint of the upper and lower substrates.

Package and electronic apparatus using the same

An optical switch includes a light emitter for emitting light and light receivers. A reflector is used for changing a path of light emitted from the light emitter. The reflector is held by a permanent magnet having first and second magnetic poles of opposite polarities. A supporting member is provided for the reflector and the first permanent magnet so that the reflector and the first permanent magnet can move between a first position and a second position. In the first position, the reflector and the first permanent magnet interact so the emitted light travels into one light receiver of the light receivers. On the other hand, in the second position, the reflector and the first permanent magnet interact so the emitted light travels into another of the light receivers. The switch further includes an electromagnet for generating first and second magnetic fields selectively for moving the reflector and the first permanent magnet between the first and second positions.

Growing community of inventors

Chiyoda-ku, Japan

Yoshinori Yokoyama