Semiconductor Energy Laboratory Co., Ltd.

Amada Company, Limited

Jgc Corporation

Yoshinori Yamada

Shunpei Yamazaki

Masashi Oota

Akihisa Shimomura

Mitsuhiro Ichijo

Yusuke Nonaka

Takashi Hamada

Yasumasa Yamane

Yuhei Sato

Yuji Egi

Tetsunori Maruyama

Noritaka Ishihara

Shigeru Akiyama

Yoichi Kurosawa

Masahito Seiwa

Tomoharu Inoue

Kenji Mouri

Kaoru Sawayanagi

Yuichi Yoshizawa

Ken Ichimura

Akihiro Kato

Satoru Kanazawa

Toshikazu Miyashita

A camera photographs a part to be estimated, which is produced by cutting a sheet metal in advance, and a dimension reference marker. An image processing unit generates edge data by extracting an edge of the part photographed by the camera, and enlarges or reduces the edge data based on a size of the dimension reference marker photographed by the camera such that a size of the edge corresponds to an actual size of the part. A machining time calculation unit calculates a length of a cutting line for cutting out the part from the sheet metal based on the edge of the edge data corresponding to the actual size of the part, and calculates a machining time for producing the part by cutting the cutting line in accordance with a material and a thickness of the sheet metal.

Machining estimation apparatus, machining estimation method, and machining estimation program

A natural gas liquefying apparatus includes: a precooling unit, which is a treatment unit configured to precool natural gas; a liquefying unit, which is a treatment unit configured to liquefy the natural gas; a refrigerant cooling unit, which is a treatment unit configured to cool a liquefying refrigerant; a compression unit configured to compress vaporized refrigerants; and a pipe rack including air-cooled coolers arrayed and arranged on an upper surface. The treatment units and the compression unit are separately arranged in a first arrangement region and a second arrangement region arranged opposed to each other across a long side of the pipe rack. The pipe rack interposed between the first and second arrangement regions has a region in which no air-cooled cooler is arranged in order to arrange a plurality of pipes, through which refrigerants are allowed to flow, in a direction of a short side of the pipe rack.

Natural gas liquefying apparatus

A method of forming an oxide semiconductor includes a step of depositing an oxide semiconductor layer over a substrate by using a sputtering apparatus in which in a target containing indium, an element M (aluminum, gallium, yttrium, or tin), zinc, and oxygen, the substrate which faces a surface of the target, and a magnet unit comprising a first magnet and a second magnet on a rear surface side of the target are provided. In the method, deposition is performed under a condition that a maximum intensity of a horizontal magnetic field is greater than or equal to 350 G and less than or equal to 2000 G in a plane where a vertical distance toward the substrate from a surface of the magnet unit is 10 mm.

Manufacturing method of oxide semiconductor

A sputtering target including an oxide with a low impurity concentration is provided. Provided is a method for manufacturing a sputtering target, including a first step of preparing a mixture including indium, zinc, an element M (the element M is aluminum, gallium, yttrium, or tin), and oxygen; a second step of raising a temperature of the mixture from a first temperature to a second temperature in a first atmosphere containing nitrogen at a concentration of higher than or equal to 90 vol % and lower than or equal to 100 vol %; and a third step of lowering the temperature of the mixture from the second temperature to a third temperature in a second atmosphere containing oxygen at a concentration of higher than or equal to 10 vol % and lower than or equal to 100 vol %.

Method for manufacturing sputtering target

A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

Semiconductor device

Growing community of inventors

Kanagawa, Japan

Yoshinori Yamada