Shin-etsu Chemical Co., Ltd.

International Business Machines Corporation

Yoshinori Taneda

Tsutomu Ogihara

Seiichiro Tachibana

Takafumi Ueda

Rie Kikuchi

Takeru Watanabe

Daisuke Kori

Martin Glodde

Yoshio Kawai

Wu-Song S Huang

Kazunori Maeda

Karen Elizabeth Petrillo

Yusuke Biyajima

Toshiharu Yano

Margaret C Lawson

A compound for forming an organic film shown by the formula (1A),RX)&#x2003;&#x2003;(1A)wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and m1 represents an integer satisfying 2&#x2264;m1&#x2264;10, wherein Xrepresents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; Xrepresents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein Rrepresents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400&#xb0; C. or higher, high filling and planarizing properties.

Compound for forming organic film, composition for forming organic film, method for forming organic film, and patterning process

The present invention provides a compound for forming an organic film which has a minimum complex viscosity of 10 Pa&#xb7;s or less when the complex viscosity is measured within a range of 50&#xb0; C. to 300&#xb0; C. This compound for forming an organic film can provide an organic film composition having high filling and planarizing properties.

A composition for forming a coating type BPSG film, containing one or more silicic acid skeletal structures represented by formula (1), one or more phosphoric acid skeletal structures represented by formula (2), one or more boric acid skeletal structures represented by formula (3), and one or more silicon skeletal structures represented by formula (4), wherein the composition contains a coupling between units in formula (4). The composition is capable of forming a BPSG film that has excellent adhesiveness in fine patterning, can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly consisting of carbon which is required in the patterning process, can maintain the peelability even after dry etching, and can suppress generation of particles by forming it in the coating process. 

Composition for forming a coating type BPSG film, substrate, and patterning process

A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process. 

Composition for forming a coating type silicon-containing film, substrate, and patterning process

The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process. 

Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition

The present invention provides a patterning process, which comprises step of forming a BPSG film on the under layer film by using a composition for forming a coating type BPSG film including a base polymer and an organic compound with a content of 25 parts by mass or more of the organic compound with respect to 100 parts by mass of the base polymer, the base polymer having a silicon containing unit, a boron containing unit and a phosphorus containing unit with a total content of the boron containing unit and the phosphorus containing unit being 10 mol % or more, the organic compound having two or more hydroxyl groups or carboxyl groups per one molecule. There can be provided a patterning process in which a fine mask pattern can be formed on the substrate to be processed by the multilayer resist method, and the residue of the resist under layer film on the mask pattern can be removed cleanly enough to process the substrate to be processed without causing damage to the substrate to be processed and the under layer film.

Patterning process using a boron phosphorus silicon glass film

The present invention provides a fluorine-containing silicon compound represented by the general formula (1), wherein each Rindependently represents a hydrocarbon group having 1 to 6 carbon atoms; each Rindependently represents a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms; and n is an integer satisfying 0&#x2266;n&#x2266;2. There can be provided a fluorine-containing silicon compound having good storage stability and useful as a raw material of a composition for forming a silicon-containing intermediate film and a silicon-containing photoresist composition used for a fine processing in the manufacturing process of a semiconductor device.

Fluorine-containing silicon compound, method for producing same, and method for producing fluorine-containing silicon resin

The invention provides a composition for forming a metal oxide-containing film comprising, as a component (A), a metal oxide-containing compound Aobtained by hydrolysis and/or condensation of one or more kinds of hydrolysable metal compounds shown by the following general formula (A-1), as a component (B), an aromatic compound shown by the following general formula (B-1), the compound generating a hydroxyl group by thermal and/or an acid. There can be provided a composition for a resist lower layer film, which has high etching selectivity, capable of subjecting to stripping under mild conditions than the conventional process, has excellent pattern adhesiveness, and fine pattern formation can be performed. 

Compositon for forming metal oxide-containing film and patterning process

A method for producing a semiconductor apparatus substrate includes steps of: forming silicon-containing film having silicon content of 1% by mass or more and 30% by mass or less on an organic under layer film formed on an substrate; forming a resist film on silicon-containing film; forming a resist pattern by exposing and developing resist film; transferring pattern to silicon-containing film using resist pattern as a mask; transferring pattern to organic under layer film using silicon-containing film as a mask to leave part or all of silicon-containing film on organic under layer film; implanting ions into substrate using organic under layer film as a mask; and peeling organic under layer film used as mask for ion implantation on which part or all of silicon-containing film remains, with peeling liquid.

Method for producing semiconductor apparatus substrate

The invention provides a composition for forming a titanium-containing resist underlayer film comprising: as a component (A), compounds selected from titanium compounds represented by the following general formulae (A-1) and (A-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, as a component (B), compounds selected from titanium compounds represented by the following general formulae (B-1) and (B-2) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compounds, and as a component (D), solvent. There can be provided a composition for forming a titanium-containing resist underlayer film to form a resist underlayer film having favorable pattern adhesiveness and excellent etching selectivity.Ti(OR)&#x2003;&#x2003;(A-1)Ti(OR)(ORO)&#x2003;&#x2003;(A-2)Ti(OR)&#x2003;&#x2003;(B-1)Ti(OR)(ORO)&#x2003;&#x2003;(B-2)

Composition for forming titanium-containing resist underlayer film and patterning process

The invention provides a composition for forming a titanium-containing underlayer film comprising: as a component (A), a titanium-containing compound obtained by reacting a divalent or a trivalent alcohol represented by the following general formula (A-2) to one or more kinds of compounds selected from a titanium compound represented by the following general formula (A-1) and a titanium-containing compound obtained by hydrolysis and/or condensation of the titanium compound and as a component (C), solvent. There can be provided a composition for forming a titanium-containing underlayer film that is excellent in storage stability without changes in characteristics, pattern adhesiveness relative to a fine pattern, and etching selectivity relative to conventional organic film and silicon-containing film.Ti(OR)&#x2003;&#x2003;(A-1)R(OH)&#x2003;&#x2003;(A-2)

The present invention provides a silicon-containing surface modifier wherein the modifier contains one or more of a repeating unit shown by the following general formula (A) and a partial structure shown by the following general formula (C). The present invention has an object to provide a resist underlayer film applicable not only to a negatively developed resist pattern formed by a hydrophilic organic compound but also to a conventional positively developed resist pattern formed by a hydrophobic compound. 

Silicon-containing surface modifier, resist underlayer film composition containing this, and patterning process

The present invention provides a silicon-containing surface modifier containing one or more repeating units each represented by the following general formula (A), or one or more partial structures each represented by the following general formula (C): It is aimed at providing a resist lower layer film which is usable for a resist pattern formed of a hydrophilic organic compound to be obtained in a negative development. 

Silicon-containing surface modifier, resist lower layer film-forming composition containing the same, and patterning process

The present invention is a silicon-containing resist underlayer film-forming composition containing a condensation product and/or a hydrolysis condensation product of a mixture comprising: one or more kinds of a compound (A) selected from the group consisting of an organic boron compound shown by the general formula (1) and a condensation product thereof and one or more kinds of a silicon compound (B) shown by the general formula (2). Thereby, there can be provided a silicon-containing resist underlayer film-forming composition being capable of forming a pattern having a good adhesion, forming a silicon-containing film which can be used as a dry-etching mask between a photoresist film which is the upperlayer film of the silicon-containing film and an organic film which is the underlayer film thereof, and suppressing deformation of the upperlayer resist during the time of dry etching of the silicon-containing film; and a patterning process.RB(OH)(OR)&#x2003;&#x2003;(1)RRRSi(OR)&#x2003;&#x2003;(2)

Silicon-containing resist underlayer film-forming composition and patterning process

A composition for forming a silicon-containing resist underlayer film that contains: a component (A) including at least one or more compounds selected from the group consisting of a polymer having repeating units shown by the following general formulae (1-1a) and (1-1b) and being capable of generating a phenolic hydroxyl group, a hydrolysate of the polymer, and a hydrolysis-condensate of the polymer, and a component (B) which is a silicon-containing compound obtained by hydrolysis-condensation of a mixture containing, at least, one or more hydrolysable silicon compounds represented by the following general formula (2) and one or more hydrolysable silicon compounds represented by the following general formula (3). RRRSi(OR)&#x2003;&#x2003;(2)Si(OR)&#x2003;&#x2003;(3)

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Jyoetsu, Japan

Yoshinori Taneda