Oki Electric Industry Co., Ltd.

Oki Semiconductor Co., Ltd.

Lapis Semiconductor Co., Ltd.

Oki Electric Industrial Co., Ltd.

Yoshinori Shizuno

Shigeru Yamada

Yasufumi Uchida

Noriko Murakami

Takashi Ohsumi

A semiconductor module including a semiconductor chip having a light receiving device formed at a front thereof and a light permeable cover having a front, a back, and a side. The light permeable cover is disposed opposite to the front of the semiconductor chip such that the front of the semiconductor chip is covered by the back of the light permeable cover. The light permeable cover is provided at the outer circumferential region of the front thereof and at the side thereof with a light shielding layer. It is possible to prevent the incidence of unnecessary light from the side of the light permeable cover of a CSP and to easily adjust the distance between a lens and the front of the semiconductor chip within tolerance.

Semiconductor module

At a semiconductor device, an integrated circuit including an optoelectronic conversion device is formed on a front face of a sensor chip. A rewiring layer, which leads from pad electrodes, and post electrodes, on the rewiring layer, are formed on the sensor chip. At least a portion of surroundings of the rewiring layer and the post electrodes is sealed with sealing resin, so as to be open above the integrated circuit face. A light-transmissive substrate is disposed over the sealed sensor chip. Penetrating electrodes, corresponding with positions of the post electrodes disposed on the sensor chip, are formed in the light-transmissive substrate, and external terminals such as solder balls or the like are formed so as to electrically connect with the penetrating electrodes.

Semiconductor device

A circuit board has an embedded electronic component such as an integrated circuit chip with a wafer level chip size package. A via hole extends through the electronic component. Another via hole extends through the substrate or prepreg on which the electronic component is mounted inside the circuit board. Conductors in the via holes enable a terminal on the surface of the electronic component to be electrically connected to a wiring pattern or another electronic component on the opposite side of the substrate or prepreg. Routing the connection through the electronic component itself saves space and reduces the length of the connection.

Circuit board with embedded component and method of manufacturing same

A semiconductor device fabrication method can improve yield of semiconductor devices and decrease (or prevent) waste of non-defective semiconductor chips. This fabrication method has a step of performing characteristic inspection after packaging a semiconductor chip every time a semiconductor chip layer is formed. The fabrication method makes another semiconductor chip layer on this semiconductor chip layer only when the inspection indicates that the semiconductor chip is a non-defective product.

Fabrication method for semiconductor device

Although a weight part of an acceleration sensor chip fixed on a die pad is coated with a gelatinous resin part of low elasticity, the weight part is easily displaced by an external acceleration. Thus, an acceleration can be detected with accuracy. Furthermore, long-term reliability equal to those of regular resin packages is ensured because those portions of an acceleration sensor device which are not used for acceleration sensing are sealed with a resin part.

Semiconductor acceleration sensor device and method for manufacturing the same

A semiconductor device comprises: a semiconductor chip having a first main surface, a second main surface, and a plurality of side surfaces; an extension portion which contacts and surrounds the side surfaces of the semiconductor chip; a base, which is capable of conducting heat generated by the semiconductor chip; an insulating film which is formed on the first face and the first main surface; a plurality of wiring patterns extended from electrode pads to the upper side of the first face of the extension portion; a sealing portion which is formed on the wiring patterns and insulating film; and a plurality of external terminals provided over the wiring patterns in a region including the upper side of the extension portion.

Semiconductor device with improved design freedom of external terminal

The present invention provides a method for manufacturing a semiconductor device, which is capable of suppressing an overflow of a sealing resin and obtaining good sealing quality, simply and at low cost. Further, the present invention provides a semiconductor device that suppresses an overflow of a sealing resin and has good sealing quality, simply and at low cost. Liquid first underfill higher in viscosity than liquid second underfill is charged into space defined between a corresponding edge side of four edge sides of each of semiconductor chips, at which the distance between at least one edge side and each of pads opposite thereto, of an interposer is of the shortest, and the interposer. The liquid first underfill is cured and sealed with first underfill. Thereafter, the liquid second underfill is charged into space defined between the semiconductor chip and the interposer excluding the space sealed with the first underfill. The liquid second underfill is cured and sealed with second underfill.

Method for manufacturing semiconductor device that includes mounting chip on board and sealing with two resins

A semiconductor device includes a substrate, a seal layer which seals a semiconductor element formed on the substrate, wherein a side surface of the seal layer is positioned inside of a side surface of the substrate.

Method of dicing a semiconductor device into plural chips

An image-capturing semiconductor device is provided with a simplified constitution and by means of fewer steps than conventional techniques. In a semiconductor device which is packaged at substantially identical outer dimensions to the outer dimensions of a first semiconductor chip, first pads serving as electrode pads are formed along a main surface of the semiconductor chip so as to be electrically connected to a circuit element provided on the semiconductor chip. A sensor portion is formed on the main surface such that a light-receiving surface thereof is exposed. A glass plate for transmitting incoming light to the sensor portion is formed in a position covering the light-receiving surface of the sensor portion. A wiring layer is formed so as to extend over the main surface of the first semiconductor chip and such that one end thereof is connected to the first pads. Solder balls are electrically connected to the first pads via the wiring layer.

Semiconductor device with simplified constitution

A semiconductor device has a semiconductor substrate with an inclined through hole extending between its two major surfaces in a peripheral part of the substrate, providing an electrical interconnection between the two surfaces. The opening of the inclined through hole on the first major surface, on which electronic components are formed, is closer to the edge of the substrate than is the opening on the second major surface. Reliability is therefore enhanced because cracks forming at the edge of the second major surface are less likely to propagate to the through hole. An electrically conductive path in the through hole is formable by spraying conductive material onto its inner wall, using an ink-jet system.

Semiconductor device with inclined through holes

There is provided a semiconductor device in which the characteristic variations of a transistor and the degradation of a gate oxide layer are reduced during a WP process and a method for manufacturing the same. The semiconductor device includes a semiconductor chip having an SOI transistor. The SOI transistor includes a semiconductor layer comprising device isolating regions, a channel region, and diffusion regions that sandwich the channel region therebetween. The semiconductor layer is formed on a support substrate via a first insulating layer. A gate electrode is formed on the channel region of the semiconductor layer via a second insulating layer. The semiconductor chip has, on the first surface, a first electrode pad electrically connected to the SOI transistor and a second electrode pad electrically connected to the support substrate.

Semiconductor device having an SOI structure and method for manufacturing the same

A method of manufacturing a semiconductor device has: preparing a semiconductor wafer having electrode pads formed on the main surface; forming contact portions, which connect to the electrode pads, on the main surface; forming a sealing resin over the main surface; grinding the top face of the sealing resin for exposing the top faces of the contact portions; polishing the top face of the sealing resin by blast processing for exposing the side of the contact portions; and forming external terminals connected with the contact portions exposing from the sealing resin.

Growing community of inventors

Kanagawa, Japan

Yoshinori Shizuno