Sanyo Electric Co., Ltd.

Nec Corporation

Rohm Co., Ltd.

Rohn Co., Ltd.

Yoshinori Shishida

Naoteru Matsubara

Yoshiki Murayama

Shinichi Chikaki

Ryotaro Yagi

Yohko Naruse

Hitoshi Hirano

Kazuo Kohmura

Hirofumi Tanaka

Makoto Izumi

Kazunari Honma

Eiji Yuasa

An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device ()) comprises movable electrodes (), an electret film () so formed as to face the movable electrodes () at a space therebetween, and a stopper () for suppressing the approach of the movable electrodes () to the electret film () within a predetermined space.

Electrostatic operation device

A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

Semiconductor device and method of fabricating the same

An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section () having a movable electrode (), a fixed electrode section () having an electret film () opposed to the movable section () at a predetermined distance and capable of storing charge and a conductive layer () formed on a predetermined region on the upper surface of the electret film (), and an insulating film () interposed between the electret film () and the conductive layer ().

Electrostatic acting device including an electret film

An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section () having a movable electrode () and a fixed electrode section () having an electret film () opposed to the movable electrode section () at a predetermined distance and capable of storing charge and a conductive layer () formed on a predetermined region on the upper surface of the electret film (). The conductive layer () is formed on the surface of a region of the electret film (), and the region is projected.

Electrostatic acting device including an electret film and an electrostatic power generator including an electret film

A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and recovering the interlayer dielectric film from deterioration with a prescribed gas is obtained. This semiconductor device comprises a first insulating film formed on a substrate and a first gas-liquid separation film, formed on at least a part of the surface of the first insulating film, composed of a material hardly permeable by a liquid and easily permeable by a gas.

Semiconductor device comprising insulating film

An electrostatic induction generator requiring no electric power supply device and capable of being mounted on a printed board is obtained. This electrostatic induction generator includes a pair of first electrodes capable of storing charges, a pair of vibrating electrodes capable of vibrating in a first direction and a second direction different from the first direction, and charged with opposite charges due to charges stored in the pair of first electrodes respectively, and a second electrode for electrically connecting the pair of vibrating electrodes to each other in a case where the pair of vibrating electrodes are at prescribed positions.

Electrostatic induction generator

An electret device includes an electret film capable of storing charges and a protective film formed so as to substantially surround a side end surface of the electret film.

Electret device and electrostatic operating apparatus

An insulating layer is formed on a semiconductor substrate, and has a through hole for via. A porous silica layer has a trench for interconnection communicating to the through hole for via, and is formed on the insulating layer in contact therewith. A conductive layer is formed in the through hole for via and in the trench for interconnection. The insulating layer is formed from a material containing carbon, hydrogen, oxygen, and silicon, and having absorption peak attributed to Si&#x2014;CHbond in a range from at least 1260 cmto at most 1280 cm(around 1274 cm) when measured with FT-IR. Thus, a semiconductor device having a porous insulating layer in which depth of the trench for interconnection is readily controlled, a dielectric constant is low, and increase in leakage current is less likely, as well as a manufacturing method thereof can be obtained.

Growing community of inventors

Yoro-gun, Japan

Yoshinori Shishida