Sanyo Electric Co., Ltd.

Semiconductor Components Industries, LLC

Sanyo Semiconductor Co., Ltd.

Kanto Sanyo Semiconductor Co., Ltd.

Kanto Sanyo Semiconductors Co., Ltd.

Yoshinori Seki

Takashi Noma

Hiroshi Yamada

Hiroyuki Shinogi

Akira Suzuki

Yukihiro Takao

Katsuhiko Kitagawa

Motoaki Wakui

Kazuo Okada

Shinzo Ishibe

Keiichi Yamaguchi

Hisao Otsuka

Masanori Iida

Koichi Kuhara

Yuichi Morita

Hisayoshi Uchiyama

Katsu Horikoshi

An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting bodyhaving a penetration holepenetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substratewith an adhesive layerbeing interposed therebetween. A device elementand wiring layersare formed on the front surface of the semiconductor substrate. A second supporting bodyis attached to the first supporting bodywith an adhesive layerbeing interposed therebetween so as to cover the penetration hole. The device elementis sealed in a cavitysurrounded by the semiconductor substrate, the first supporting bodyand the second supporting body

Semiconductor device and method of manufacturing the same

The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.

Semiconductor device

A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

Semiconductor device with recess portion over pad electrode

The invention enhances moisture resistance between a supporting body and an adhesive layer to enhance the reliability of a semiconductor device. A semiconductor device of the invention has a first insulation film formed on a semiconductor element, a first wiring formed on the first insulation film, a supporting body formed on the semiconductor element with an adhesive layer being interposed therebetween, a third insulation film covering the back surface of the semiconductor element onto the side surface thereof and the side surface of the adhesive layer, a second wiring connected to the first wiring and extending onto the back surface of the semiconductor element with the third insulation film being interposed therebetween, and a protection film formed on the second wiring.

A glass substrate is bonded through a resin to the top surface of a semiconductor wafer on which a first wiring is formed. A V-shaped groove is formed by notching from the back surface of the wafer. A second wiring connected with the first wiring and extending over the back surface of the wafer is formed. A protection film composed of an organic resin or a photoresist layer to provide protection with an opening is formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the back surface of the wafer by spray coating.

Manufacturing method of semiconductor device

The invention is directed to an improvement of cutting accuracy in a cutting process when a semiconductor device attached with a supporting member is manufactured. The invention provides a manufacturing method of a semiconductor device where a semiconductor wafer attached with a glass substrate is cut with moving a rotation blade along a dicing region and has following features. A pair of alignment marks is formed facing each other over the dicing region on the semiconductor wafer. Then, when the rotation blade is to be aligned on a center of the dicing region, that is, on a centerline thereof in the cutting process, positions of the alignment marks are detected by a recognition camera, the centerline is calculated based on the detection result, and the rotation blade is aligned on the centerline to perform cutting.

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method thereof

A first glass substrate is bonded through a resin to a top surface of a semiconductor wafer on which a first wiring is formed. A second glass substrate is bonded to a back surface of the semiconductor wafer through a resin. A V-shaped groove is formed by notching from a surface of the second glass substrate through a part of the first glass substrate. A second wiring connected with the first wiring and extending to the surface of the second glass substrate is formed. A protection film composed of an organic resin and a photoresist layer to provide the protection film with an opening are formed on the second wiring by spray coating. A conductive terminal is formed by screen printing using the protection film as a solder mask. A cushioning material may be formed on the second glass substrate by spray coating.

Growing community of inventors

Gunma, Japan

Yoshinori Seki